Abstract:Thin film bulk acoustic resonator (FBAR) plays a very important role in radio frequency (RF) filters used in cell phone and other wireless systems. Although FBAR is commercialized, the design/process interactions on the frequency response variation in FBAR device are still lacking. Design and fabrication are two crucial aspects affecting FBAR device performance. In this report, various solidly mounted resonators (SMR) were designed, fabricated and analyzed to study wafer-level site-to-site RF variation on design and fabrication process. As a key process step for SMR FBAR, the optimization process of Mg-doped ZnO piezoelectric thin film deposition was studied by varying thin film sputtering conditions using various sputtering targets and by post annealing treatment after the deposition. The quality of this crucial layer was verified by XRD on its (0 0 2) crystallization and wafer-level FBAR RF characterization. FBAR devices with high quality were fabricated with an excellent resonant behavior near 2 GHz and a maximum return loss of -15 to 25 dB. Quality factor Q ranges from 400 to 800, with a coupling coefficient keff(2) of 1.5-3%. Wafer-level and wafer-to-wafer variation of central frequency are within 1.8-2.1 GHz. Computer simulation verified that this frequency variation correlates to the piezoelectric film variation of 1.6-1.9 mu m. Process control on this piezoelectric thin film is essential to maintaining the resonator frequency-controlled value when building duplexer RF circuits. The dependency of RF performance on FBAR size, density and orientation is not obvious, compared to that of the wafer-level FBAR device variation on fabrication process. Regarding to the Mg-doping effect in MgxZn1-xO piezoelectric film, the amount of Mg in MgxZn1-xO film during the sputtering process must be properly controlled within 30% to keep the piezoelectric quality. The average acoustic speed of the Mg-doped ZnO film is 6870 m/s with the estimated range of 5760-7980 m/s, which is better than that of pure ZnO film (6330 m/s).

Development of film bulk acoustic wave resonators based on piezoelectric aluminum nitride

Characteristics of film bulk acoustic wave resonator using different electrode materials

High- Q film bulk acoustic resonator with high quality AlN film based on transfer method

Progress of Research on the Thin-film Bulk Acoustic Resonator

Electrically Tunable Film Bulk Acoustic Resonator Based On Au/Zno/Al Structure

A Multiple Resonant Mode Film Bulk Acoustic Resonator Based on Silicon-On-Insulator Structures

Characterization of Nanomechanical and Piezoelectric Properties of Aln Thin Film for Thin Film Bulk Acoustic Wave Resonators

Aluminum Nitride Based Film Bulk Acoustic Resonator with Anchor Column Structure

Simulation and Preparation of Fbars Based on Aln Thin Films

Analysis and Enhancement of Q-Factor in Thin-Film Bulk Acoustic Wave Resonator (FBAR)

Design and modelling of thin film bulk acoustic resonator (FBAR) for RF application

High-Performance Film Bulk Acoustic Resonator and Filter Based on an Al $_{\text{0.8}}$ Sc $_{\text{0.2}}$ N Film Prepared by a Low-Temperature Staged Deposition Method

High speed surface acoustic wave and laterally excited bulk wave resonator based on single-crystal non-polar AlN film

Film Bulk Acoustic Wave Resonator in Rf Filters

Recent developments of film bulk acoustic resonators

Film Bulk Acoustic Resonators Integrated on Arbitrary Substrates Using a Polymer Support Layer.

Demonstration of Thin Film Bulk Acoustic Resonator Based on AlN/AlScN Composite Film with a Feasible Keff2

Millimeter Wave Thin-Film Bulk Acoustic Resonator in Sputtered Scandium Aluminum Nitride Using Platinum Electrodes

Process Optimization and Device Variation of Mg-doped ZnO FBARs

Air-backed Al/ZnO/Al film bulk acoustic resonator without any support layer

Micromachined acoustic wave resonator isolated from substrate.