Aluminum scandium nitride thin-film bulk acoustic resonators for 5G wideband applications

Yang Zou,Chao Gao,Jie Zhou,Yan Liu,Qinwen Xu,Yuanhang Qu,WenJuan Liu,Jeffrey Bo Woon Soon,Yao Cai,Chengliang Sun
DOI: https://doi.org/10.1038/s41378-022-00457-0
2022-11-29
Microsystems & Nanoengineering
Abstract:Abstract Bulk acoustic wave (BAW) filters have been extensively used in consumer products for mobile communication systems due to their high performance and standard complementary metal-oxide-semiconductor (CMOS) compatible integration process. However, it is challenging for a traditional aluminum nitride (AlN)-based BAW filter to meet several allocated 5G bands with more than a 5% fractional bandwidth via an acoustic-only approach. In this work, we propose an Al 0.8 Sc 0.2 N-based film bulk acoustic wave resonator (FBAR) for the design of radio frequency (RF) filters. By taking advantage of a high-quality Al 0.8 Sc 0.2 N thin film, the fabricated resonators demonstrate a large K eff 2 of 14.5% and an excellent figure of merit (FOM) up to 62. The temperature coefficient of frequency (TCF) of the proposed resonator is measured to be −19.2 ppm/°C, indicating excellent temperature stability. The fabricated filter has a center frequency of 4.24 GHz, a −3 dB bandwidth of 215 MHz, a small insertion loss (IL) of 1.881 dB, and a rejection >32 dB. This work paves the way for the realization of wideband acoustic filters operating in the 5G band.
nanoscience & nanotechnology,instruments & instrumentation
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