Abstract:Bulk Acoustic Wave (BAW) filters find applications in radio frequency (RF) communication systems for Wi-Fi, 3G, 4G, and 5G networks. In the beyond-5G (potential 6G) era, high frequency bands (>8 GHz) are expected to require resonators with high-quality factor (Q) and electromechanical coupling (k_t^2) to form filters with low insertion loss and high selectivity. However, both the Q and k_t^2 of resonator devices formed in traditional uniform polarization piezoelectric films of aluminum nitride (AlN) and aluminum scandium nitride (AlScN) decrease when scaled beyond 8 GHz. In this work, we utilized 4-layer AlScN periodically poled piezoelectric films (P3F) to construct high frequency (~17-18 GHz) resonators and filters. The resonator performance is studied over a range of device geometries, with the best resonator achieving a k_t^2 of 11.8% and a Q_p of 236.6 at the parallel resonance frequency (fp) of 17.9 GHz. These resulting figures of merit are ((FoM)_1=(k_t^2 Q)_p and (FoM_2=f_p(FoM)_1x10^-9) ) 27.9 and 500 respectively. These and the k_t^2 are significantly higher than previously reported An/AlScN-based resonators operating at similar frequencies. Fabricated 3-element and 6-element filters formed from these resonators demonstrated low insertion losses (IL) of 1.86 dB and 3.25 dB, and -3 dB bandwidths (BW) of 680 MHz (fractional BW of 3.9%) and 590 MHz (fractional BW of 3.3%) at ~17.4 GHz center frequency. The 3-element and 6-element filters achieved excellent linearity with in-band input third-order intercept point (IIP3) values of +36 dBm and +40 dBm, respectively, which are significantly higher than previously reported acoustic filters operating at similar frequencies.

BAW RF Filter Based on Single Crystal AlN-on-SiC Resonator

The 3.4 GHz BAW RF Filter Based on Single Crystal AlN Resonator for 5G Application

High speed surface acoustic wave and laterally excited bulk wave resonator based on single-crystal non-polar AlN film

Aluminum scandium nitride thin-film bulk acoustic resonators for 5G wideband applications

Periodically Poled Aluminum Scandium Nitride Bulk Acoustic Wave Resonators and Filters for Communications in the 6G Era

Single-crystalline Bulk Acoustic Wave Resonators Fabricated with AlN Film Grown by a Combination of PLD and MOCVD Methods

High-Performance SAW Resonators Based on Single-crystalline a-Plane AlN Thin Films on Sapphire Substrates

Surface and bulk acoustic wave resonators based on aluminum nitride for bandpass filters

Hybrid Integration of BAW Resonators with an On-Chip Inductor to Improve the Stopband Rejection of the N78 Band Filter

Materials, Design, and Characteristics of Bulk Acoustic Wave Resonator: A Review

Fabrication of Bulk Acoustic Wave Resonator Based on AlN Thin Film

A Modified Lattice Configuration Design for Compact Wideband Bulk Acoustic Wave Filter Applications

Wide Band BAW Filter Based on Single-Crystalline LiNbO₃ Thin Film with Insulating Bragg Reflector

High-Performance Surface Acoustic Wave Devices Using LiNbO 3 /SiO 2 /SiC Multilayered Substrates

Single Crystal Bulk Acoustic Resonator for 5 GHz and High-Power Applications

High-Performance Surface Acoustic Wave Devices Using LiNbO3/SiO2/SiC Multilayered Substrates

Single-mode and Ultra-Broadband Gigahertz Surface Acoustic Waveguides on AlN-on-SiC Substrates

High-Performance N79 Band AlScN BAW Resonator and Filter with the Consideration of Area Effect

Single-crystalline LiNbO 3 film based wideband SAW devices with spurious-free responses for future RF front-ends

Monolithic 1–6-Ghz Multiband Acoustic Filters Using SH-SAW and LLSAW on LiNbO$_{3}$/SiO$_{2}$/SiC Platform

Design and Fabrication of 3.5 GHz Band-Pass Film Bulk Acoustic Resonator Filter