Design and Fabrication of 3.5 GHz Band-Pass Film Bulk Acoustic Resonator Filter

Yu Zhou,Yupeng Zheng,Qinwen Xu,Yuanhang Qu,Yuqi Ren,Xiaoming Huang,Chao Gao,Yan Liu,Shishang Guo,Yao Cai,Chengliang Sun

DOI: https://doi.org/10.3390/mi15050563

IF: 3.4

2024-04-26

Micromachines

Abstract:With the development of wireless communication, increasing signal processing presents higher requirements for radio frequency (RF) systems. Piezoelectric acoustic filters, as important elements of an RF front-end, have been widely used in 5G-generation systems. In this work, we propose a Sc0.2Al0.8N-based film bulk acoustic wave resonator (FBAR) for use in the design of radio frequency filters for the 5G mid-band spectrum with a passband from 3.4 to 3.6 GHz. With the excellent piezoelectric properties of Sc0.2Al0.8N, FBAR shows a large Keff2 of 13.1%, which can meet the requirement of passband width. Based on the resonant characteristics of Sc0.2Al0.8N FBAR devices, we demonstrate and fabricate different ladder-type FBAR filters with second, third and fourth orders. The test results show that the out-of-band rejection improves and the insertion loss decreases slightly as the filter order increases, although the frequency of the passband is lower than the predicted ones due to fabrication deviation. The passband from 3.27 to 3.47 GHz is achieved with a 200 MHz bandwidth and insertion loss lower than 2 dB. This work provides a potential approach using ScAlN-based FBAR technology to meet the band-pass filter requirements of 5G mid-band frequencies.

chemistry, analytical,nanoscience & nanotechnology,instruments & instrumentation,physics, applied

What problem does this paper attempt to address?

### Problems the Paper Aims to Solve

This paper aims to design and fabricate a band-pass filter based on scandium aluminum nitride (ScAlN) thin-film bulk acoustic resonator (FBAR) to meet the requirements of the 5G mid-band (3.4 to 3.6 GHz). Specifically, the paper addresses the problem through the following points:

1. **Material Selection**: The choice of aluminum nitride doped with 20 at.% scandium (Sc0.2Al0.8N) to achieve a high effective electromechanical coupling coefficient (\( K_{\text{eff}}^2 \)), reaching approximately 13.1%, thereby meeting the bandwidth requirements of the 5G mid-band.

2. **Filter Design**: The design of trapezoidal structure FBAR filters of different orders, including 2nd-order, 3rd-order, and 4th-order filters, and the verification of these filters' performance in terms of out-of-band rejection and insertion loss.

3. **Manufacturing Process**: A detailed description of the manufacturing process of FBAR devices, including thin-film deposition, chemical mechanical polishing, and patterning steps, ensuring good c-axis orientation and surface morphology of the devices.

4. **Experimental Results**: Test results show that as the filter order increases, the out-of-band rejection performance gradually improves, but the insertion loss slightly deteriorates. Ultimately, a bandwidth from 3.27 to 3.47 GHz was achieved with an insertion loss of less than 2 dB.

Through the above work, the paper proposes a potential method to meet the 5G mid-band requirements for band-pass filters using ScAlN-based FBAR technology.