Abstract:Bulk Acoustic Wave (BAW) filters find applications in radio frequency (RF) communication systems for Wi-Fi, 3G, 4G, and 5G networks. In the beyond-5G (potential 6G) era, high frequency bands (>8 GHz) are expected to require resonators with high-quality factor (Q) and electromechanical coupling (k_t^2) to form filters with low insertion loss and high selectivity. However, both the Q and k_t^2 of resonator devices formed in traditional uniform polarization piezoelectric films of aluminum nitride (AlN) and aluminum scandium nitride (AlScN) decrease when scaled beyond 8 GHz. In this work, we utilized 4-layer AlScN periodically poled piezoelectric films (P3F) to construct high frequency (~17-18 GHz) resonators and filters. The resonator performance is studied over a range of device geometries, with the best resonator achieving a k_t^2 of 11.8% and a Q_p of 236.6 at the parallel resonance frequency (fp) of 17.9 GHz. These resulting figures of merit are ((FoM)_1=(k_t^2 Q)_p and (FoM_2=f_p(FoM)_1x10^-9) ) 27.9 and 500 respectively. These and the k_t^2 are significantly higher than previously reported An/AlScN-based resonators operating at similar frequencies. Fabricated 3-element and 6-element filters formed from these resonators demonstrated low insertion losses (IL) of 1.86 dB and 3.25 dB, and -3 dB bandwidths (BW) of 680 MHz (fractional BW of 3.9%) and 590 MHz (fractional BW of 3.3%) at ~17.4 GHz center frequency. The 3-element and 6-element filters achieved excellent linearity with in-band input third-order intercept point (IIP3) values of +36 dBm and +40 dBm, respectively, which are significantly higher than previously reported acoustic filters operating at similar frequencies.

What problem does this paper attempt to address?

The paper aims to address the following issues: In the 6G era and beyond, communication systems in high-frequency bands (>8 GHz) require bulk acoustic wave (BAW) resonators with high quality factors (Q) and high electromechanical coupling coefficients (\(k_t^2\)) to form filters with low insertion loss and high selectivity. However, traditional uniformly polarized piezoelectric thin films (such as aluminum nitride (AlN) and scandium aluminum nitride (AlScN)) experience a decrease in Q and \(k_t^2\) when extended beyond 8 GHz. Therefore, this paper utilizes a four-layer periodically polarized AlScN film (P3F) to construct high-frequency (approximately 17-18 GHz) resonators and filters, and investigates the performance of resonators under different device geometries. Specifically, the optimal resonator achieved an 11.8% \(k_t^2\) and a Q value of 236.6 at a parallel resonance frequency of 17.9 GHz. These metrics are significantly better than previously reported AlN/AlScN-based resonators operating at similar frequencies. Additionally, 3-element and 6-element filters composed of these resonators demonstrated low insertion losses of 1.86 dB and 3.25 dB, respectively, and -3 dB bandwidths of 680 MHz and 590 MHz at a center frequency of approximately 17.4 GHz (accounting for 3.9% and 3.3% fractional bandwidth, respectively). The filters also exhibited good linearity, with input third-order intercept points (IIP3) of +36 dBm and +40 dBm, respectively. Based on these experimental results, the authors believe that P3F AlScN resonator and filter technology has the potential to advance RF communication technology in the 6G era.

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