Abstract:Telecommunication of the next generation demands filters that can operate in the 10 GHz range with sufficient bandwidths. For surface-acoustic-wave (SAW) devices this prerequisite translates into high sound velocities and high piezoelectric couplings. Wurtzite AlN on diamond, which exploits the strong piezoelectricity of AlN with the very high SAW velocity of diamond, has been considered a promising platform. A significant boost (up to a factor of 4) of the piezoelectric response can be obtained by alloying AlN with Sc. Here, the main challenge lies in the synthesis of highly-oriented thin (Sc,Al)N films on diamond. In this work, we aim at establishing a platform for SAW devices using plasma-assisted molecular beam epitaxy for the deposition of Sc 0.2 Al 0.8 N on diamond. We investigate the structural properties related to SAW generation gearing towards applications at high frequencies. To this end, we prepare (Sc,Al)N thin films using plasma-assisted MBE on polished polycrystalline diamond wafers and demonstrate the efficient generation of SAW modes with frequencies up to 8 GHz. Systematic studies of the dependence of the SAW velocity and electromechanical coupling coefficient on the Sc 0.2 Al 0.8 N film thickness is presented for various SAW modes. Our result demonstrates the potential of this material combination for future application that requires large bandwidth in the ultra-high frequency range.

Surface acoustic wave resonators based on (002)AlN/Pt/diamond/silicon layered structure

High speed surface acoustic wave and laterally excited bulk wave resonator based on single-crystal non-polar AlN film

Single layer diamond - A new ultrathin 2D carbon nanostructure for mechanical resonator

Integration of diamond-like carbon and AlN for acoustic wave devices

Enhanced Performance of 17.7 GHz SAW Devices Based on AlN/diamond/Si Layered Structure with Embedded Nanotransducer

Surface acoustic wave characteristics on an AlN/LiNbO_3/diamond layered structure

Surface Acoustic Wave Characteristics Based on C-Axis (006) LiNbO3/diamond/silicon Layered Structure

Fabrication and characterization of hybrid bulk and surface acoustic wave resonators with Ag/patterned-AlN/Mo/diamond/Si layered structure

High-Performance SAW Resonators Based on Single-crystalline a-Plane AlN Thin Films on Sapphire Substrates

Theoretical investigation of surface acoustic wave in the new, three-layered structure: ZnO/AlN/diamond

Theoretical and Experimental Study of High-Electromechanical-Coupling Surface Acoustic Wave Resonators Based on A-Plane (1120)al0.56sc0.44n Films

Ultra flexible pseudo-lamb wave RF resonators based on ZnO/PI and AlN/PI structures

Near 6 GHz Sezawa Mode Surface Acoustic Wave Resonators using AlScN on SiC

High-Frequency Surface Acoustic Wave Devices Based on ZnO/SiC Layered Structure

Generation of GHz surface acoustic waves in (Sc,Al)N thin films grown on free-standing polycrystalline diamond wafers by plasma-assisted molecular beam epitaxy

Design and Fabrication of an Surface Acoustic Wave Resonator Based on AlN/4H-SiC Material for Harsh Environments

Single-crystalline Bulk Acoustic Wave Resonators Fabricated with AlN Film Grown by a Combination of PLD and MOCVD Methods

Flexible Surface Acoustic Wave Device with Aln Film on Polymer Substrate

Single-mode and Ultra-Broadband Gigahertz Surface Acoustic Waveguides on AlN-on-SiC Substrates

High-performance surface acoustic wave resonators in the 1 to 3 GHz range using a ScAlN/6H-SiC structure

Wafer-Scale Flexible Surface Acoustic Wave Devices Based on an Aln/Si Structure