Abstract:Surface acoustic waves (SAWs) are of practical importance across several fields. Particularly, a wide range of SAW devices is available, which are based on the stacking piezoelectric layered hetero-structures. As such, efficient and stable algorithm of analyzing electromechanical coupling factor (K2) should be of specific interest, inspiring a variety of piezoelectric layered structures. Motivated by the above considerations, this paper exploits the performance of Sc43% AlN57%/ZnO/diamond piezoelectric hetero-structures using matrix and polynomial methods. Consequently, dispersion curves, the electromechanical coupling factor and profiles of Rayleigh waves are calculated, in which the properties of hexagonal intermediate ZnO layer are varied. Here, $$ (0001) - [10\bar{1}0]{\text{ZnO}} $$ or $$ (11\bar{2}0) - [0001]{\text{ZnO}} $$ directions of the middle layer were integrated with Sc43% AlN57%/diamond to be a composite hetero-structure with a larger K2 of SAW. Accordingly, a commercial ZnO specimen was characterized by scanning electron microscopy (SEM) as well as Raman and XRD spectroscopy to determine its available crystallographic directions and the C-axis hexagonal character. Comparing with conventional AlN/diamond hetero-structures, the inclusion of ZnO as the intermediate layer provides with an excellent electromechanical coupling factor which significantly improves the $$ (11\bar{2}0) - [0001] $$ structure. However, comparing with the ZnO/diamond hetero-structure, a high phase velocity (Vph) was observed. Therefore, the development of a well-balanced structure that maximizes the values of Vph and K2 is systematically challenging. Moreover, it was found that initial stresses have a significant effect on the Rayleigh wave velocities. Fundamental A0 Lamb mode can be generated in piezoelectric hetero-structures when the properties of substrate remain very low relative to the film. Numerical results obtained in this paper can provide a deeper insight into the nature of the Rayleigh wave behaviors in piezoelectric hetero-structures, involving a ZnO intermediate layer.

Theoretical investigation of surface acoustic wave in the new, three-layered structure: ZnO/AlN/diamond

Influence of a Piezoelectric ZnO Intermediate Layer on Rayleigh Waves Propagating in Sc 43% AlN 57% /zno/diamond Hetero-Structures Subjected to Uniaxial Stress

Surface acoustic wave resonators based on (002)AlN/Pt/diamond/silicon layered structure

Surface acoustic wave characteristics on an AlN/LiNbO_3/diamond layered structure

Systematical Study of the Basic Properties of Surface Acoustic Wave Devices Based on ZnO and GaN Multilayers

Integration of diamond-like carbon and AlN for acoustic wave devices

High speed surface acoustic wave and laterally excited bulk wave resonator based on single-crystal non-polar AlN film

Analysis of SAW properties in ZnO/AlxGa1-xN/c-Al2O3 structures

Surface Acoustic Wave Characteristics Based on C-Axis (006) LiNbO3/diamond/silicon Layered Structure

Enhanced Performance of 17.7 GHz SAW Devices Based on AlN/diamond/Si Layered Structure with Embedded Nanotransducer

Fabrication and characterization of hybrid bulk and surface acoustic wave resonators with Ag/patterned-AlN/Mo/diamond/Si layered structure

High-Frequency Surface Acoustic Wave Devices Based on ZnO/SiC Layered Structure

Generation of GHz surface acoustic waves in (Sc,Al)N thin films grown on free-standing polycrystalline diamond wafers by plasma-assisted molecular beam epitaxy

The fabrication of 2.5 GHZ SAW filter using ZnO/diamond structure

Enhanced Performance Of Zno/Sio2/Al2o3 Surface Acoustic Wave Devices With Embedded Electrodes

Design Study on SAW Devices Based on ZnO/Si Structure

Propagation of leaky surface acoustic waves in a layered piezoelectric semiconductor structure

Theoretical and Experimental Study of High-Electromechanical-Coupling Surface Acoustic Wave Resonators Based on A-Plane (1120)al0.56sc0.44n Films

Theoretical Investigation of Acoustic Wave Devices Based on Different Piezoelectric Films Deposited on Silicon Carbide

Enhanced Performance of ZnO/SiO 2 /Al 2 O 3 Surface Acoustic Wave Devices with Embedded Electrodes

Enhanced Coupling Coefficient in Dual-Mode ZnO/SiC Surface Acoustic Wave Devices with Partially Etched Piezoelectric Layer