Enhanced Performance of ZnO/SiO 2 /Al 2 O 3 Surface Acoustic Wave Devices with Embedded Electrodes

Rongxuan Su,Sulei Fu,Junyao Shen,Zhenglin Chen,Zengtian Lu,Mingliang Yang,Rui Wang,Fei Zeng,Weibiao Wang,Cheng Song,Feng Pan
DOI: https://doi.org/10.1021/acsami.0c12055
2020-08-24
Abstract:With the advent of the 5G era, surface acoustic wave (SAW) devices with a larger bandwidth and better temperature stability are strongly required, meanwhile the dimensions of devices are continuously scaling down. In this work, a new layout of ZnO/SiO<sub>2</sub>/Al<sub>2</sub>O<sub>3</sub> SAW devices with embedded electrodes was developed, and with the help of the finite element method (FEM), the propagation characteristics were simulated. Through adopting embedded electrodes, a large electromechanical coupling coefficient (<i>K</i><sup>2</sup>) of 6.6% for the Rayleigh mode can be achieved (5 times larger than that of the conventional ZnO/Al<sub>2</sub>O<sub>3</sub> structure), feasible for wideband SAW devices, and a low acoustic velocity (<i>V</i><sub>p</sub>) of 2960 m/s is exhibited simultaneously, which benefits the miniaturization of SAW devices. The dramatic enhancement of <i>K</i><sup>2</sup> is mainly attributed to the more efficient excitation of SAW in piezoelectric films. Furthermore, a SiO<sub>2</sub> overlay is added on the top of the structure to gain an excellent zero temperature coefficient of frequency (TCF). Experimentally, we successfully fabricated SAW one-port resonators based on the proposed structure and good characteristics of high <i>K</i><sup>2</sup>, low <i>V</i><sub>p</sub>, and small TCF as simulated were confirmed. Our results show that the proposed structure provides a viable route to design SAW devices with a large bandwidth, small size, and robust temperature compensation for practical use.This article has not yet been cited by other publications.
materials science, multidisciplinary,nanoscience & nanotechnology
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