Abstract:Nominally phase-pure $\gamma$-$Ga_2O_3$ was deposited on (100) $MgAl_2O_4$ within a narrow temperature window centered at $\sim$470 $^{\circ}$C using metal-organic chemical vapor deposition (MOCVD). The film deposited at 440 $^{\circ}$C exhibited either poor crystallization or an amorphous structure; the film grown at 500 $^{\circ}$C contained both $\beta$-$Ga_2O_3$ and $\gamma$-$Ga_2O_3$. A nominally phase-pure $\beta$-$Ga_2O_3$ film was obtained at 530 $^{\circ}$C. Atomic-resolution scanning transmission electron microscopy (STEM) investigations of the $\gamma$-$Ga_2O_3$ film grown at 470 $^{\circ}$C revealed a high density of antiphase boundaries. A planar defect model developed for $\gamma$-$Al_2O_3$ was extended to explain the stacking sequences of the Ga sublattice observed in the STEM images of $\gamma$-$Ga_2O_3$. The presence of the 180$^{\circ}$ rotational domains and 90$^{\circ}$ rotational domains of $\beta$-$Ga_2O_3$ inclusions within the $\gamma$-$Ga_2O_3$ matrix is discussed within the context of a comprehensive investigation of the epitaxial relationship between those two phases in the as-grown film at 470 $^{\circ}$C and the same film annealed at 600 $^{\circ}$C. The results led to the hypotheses that (i) incorporation of certain dopants including Si, Ge, Sn, Mg, Al, and Sc, into $\beta$-$Ga_2O_3$, locally stabilizes the "$\gamma$-phase" and (ii) the site preference(s) for these dopants promotes the formation of the "$\gamma$-phase" and/or $\gamma$-$Ga_2O_3$ solid solutions. However, in the absence of such dopants, pure $\gamma$-$Ga_2O_3$ remains the least stable $Ga_2O_3$ polymorph, as indicated by its very narrow growth window, lower growth temperatures relative to other $Ga_2O_3$ polymorphs, and the largest calculated difference in Helmholtz free energy per formula unit between $\gamma$-$Ga_2O_3$ and $\beta$-$Ga_2O_3$ than all other polymorphs.

Growth of β-Ga2O3 Single Crystals by the Solution–Melt Method

Growth technology and characterization of bulk crystalline gallium oxide

Solid‐Solution Limits and Thorough Characterization of Bulk β‐(AlxGa1‐x)2O Single Crystals Grown by the Czochralski Method

Floating Particles in the Melt during the Growth of <i>β</i>-Ga<sub>2</sub>O<sub>3</sub> Single Crystals Using the Czochralski Method

Floating Particles in the Melt during the Growth of <i></i>-Ga<sub>2</sub>O<sub>3</sub> Single Crystals Using the Czochralski Method

Epitaxial growth of β-Ga2O3 by hot-wall MOCVD

Floating Particles in the Melt during the Growth of β-Ga2O3 Single Crystals Using the Czochralski Method

Atomic-scale investigation of γ-Ga2O3 deposited on MgAl2O4 and its relationship with β-Ga2O3

Β-Ga2o3 Thin Film Grown on Sapphire Substrate by Plasma-Assisted Molecular Beam Epitaxy

Large-Area MOCVD Growth of Ga2O3 in a Rotating Disc Reactor

Thermodynamics of Ga2O3 Heteroepitaxy and Material Growth Via Metal Organic Chemical Vapor Deposition

Growth of LiGaO2 as a Substrate of GaN by Temperature Gradient Technique

Growth of $\beta$-Ga$_{2}$O$_{3}$ Films on Sapphire by Hydride Vapor Phase Epitaxy

Systematic Investigation of the Growth Kinetics of Β -Ga2o3 Epilayer by Plasma Enhanced Chemical Vapor Deposition

Growth and characteristics of β-Ga2O3 thin films on sapphire (0001) by low pressure chemical vapour deposition

Low-temperature homoepitaxial growth of β-Ga2O3 thin films by atmospheric pressure plasma-enhanced chemical vapor deposition technique

Investigation of Β‐ga2o3 Film Growth Mechanism on C‐plane Sapphire Substrate by Ozone Molecular Beam Epitaxy

2 in. Bulk β-Ga2O3 Single Crystals Grown by EFG Method with High Wafer-Scale Quality

Atomic-scale investigation of $γ$-Ga$_2$O$_3$ deposited on MgAl$_2$O$_4$ and its relationship with $β$-Ga$_2$O$_3$

Growth of Single-Crystalline, Atomically Smooth MgO Films on Ge(001) by Molecular Beam Epitaxy

Growth of Β-Ga 2 O 3 Films on Sapphire by Hydride Vapor Phase Epitaxy