Scaling CMOS Technologies with Constant Latch-Up Immunity

A. Lewis,Russel A. Martin,Tiao-Yuan Huang,John Y. Chen,R. Bruce

1986-05-28

Abstract:

What problem does this paper attempt to address?

Static CMOS Latch-Up Considerations in HVIC Design

Alex Q. Huang,G.A.J. Amaratunga,E.M. Sankara Narayanan,W. I. Milne

DOI: https://doi.org/10.1109/4.52192

IF: 5.4

1990-01-01

IEEE Journal of Solid-State Circuits

Abstract:Static latchup in CMOS devices placed on a thin epitaxial layer for high-voltage integrated circuits (HVIC) is investigated using SPICE. The layout configuration and substrate current have a major influence on CMOS latchup as compared with conventional CMOS structures. Special latchup conditions exist for NMOS devices adjacent to high-voltage devices due to an extra p-n-p-n path. The results suggest that the use of PMOS adjacent to the high-voltage is best suited, in terms of layout, to avoiding latchup conditions. It is also shown that the latchup of CMOS devices is improved by placing them in an n/sup -/ epitaxial layer on a p/sup -/ substrate.< >
Silicon-Controlled Rectifier Stacking Structure for High-Voltage ESD Protection Applications

Zhiwei Liu,Juin J. Liou,Shurong Dong,Yan Han

DOI: https://doi.org/10.1109/led.2010.2050575

IF: 4.8157

2010-01-01

IEEE Electron Device Letters

Abstract:Latchup immunity is a challenging issue for the design of power supply clamps used in high-voltage electrostatic discharge (ESD) protection applications. While silicon-controlled rectifiers (SCRs) are highly robust ESD devices, they are traditionally not suited for high-voltage ESD due to their inherent low holding voltage and, thus, vulnerability to latchup. In this letter, a novel SCR stacking structure with an extremely high holding voltage, very small snapback, and acceptable failure current has been developed. The new and existing high holding voltage ESD devices are also compared to demonstrate the advancement of this work.
Physics-based Analytical Modeling of CMOS Latchup

Gennady I. Zebrev

2024-08-14

Abstract:Analysis of the steady-state Kirchhoff equations within the framework of a new physics-based equivalent circuit provides explicit expressions for the holding voltage and current for the resistive mode in bi-stable CMOS structures. The resulting expressions are functions of the physical parameters (temperature, doping level of the substrate, material band gap), which makes it possible to evaluate the influence of technological factors on the latchup parameters. In particular, an explicit formula was obtained for the critical charge for single event latchup as a function of process parameters and temperature.

Applied Physics,Materials Science
The Influence of an LIGBT on CMOS Latch Up in Power Integrated Circuit

A.Q. Huang,G.A.J. Amaratunga

DOI: https://doi.org/10.1109/16.464404

IF: 3.1

1995-01-01

IEEE Transactions on Electron Devices

Abstract:The latch up characteristics of a CMOS adjacent to a high voltage lateral insulated gate bipolar transistor (LIGBT) have been experimentally investigated. While it has been found that the holding voltage and holding current of the CMOS do not strongly depend on the power device operation, the triggering voltage has been found to be critical to the power device operation.< >
Novel ESD Protection Design Methodology and Latchup Prevention for a 0.5-&Amp;#956;m CMOS ASIC Library

Yuan Wang,Jia Song,Zhongjian Chen,Ji Lijiu

DOI: https://doi.org/10.1109/icasic.2005.1611495

2006-01-01

Abstract:In this paper, instead of the traditional experience-based trial-and-error ESD design approach, a novel ESD protection design methodology is proposed, which resolves the costly and time-consuming problems of high-performance ESD protection development in deep-submicron CMOS technology. And this novel design method is conducted and verified in a 0.5-/spl mu/m CMOS technology to accomplish I/O cell design of a CMOS ASIC library, whose human-body-model ESD level can be great than 4.5kV. To effectively improve latchup free capability, latchup prevention design is also discussed.
Low Power, and Highly Reliable Single Event Upset Immune Latch for Nanoscale CMOS Technologies

R. Rajaei,Abdolah Amirany

DOI: https://doi.org/10.1109/ICEE.2018.8472552

2018-05-01

Abstract:The susceptibility of sequential logic circuits to radiation induced soft errors is increasing as CMOS transistors are scaling down and the supply voltage is decreasing. Latch circuits are one of the main parts of sequential logic and can be affected by radiation. This paper proposes and evaluates a new highly reliable and low cost latch circuit capable of tolerating energetic particles. Employing a 45nm CMOS model, SPICE simulations reveal that the proposed latch can fully tolerate the radiation induced single event upsets (SEU) caused by high energetic particles. Moreover, the proposed SEU immune latch circuit has the lowest power consumption with respect to other recently proposed SEU tolerant latches. It is shown that up to 80% power saving is obtainable. Furthermore, the proposed circuit offers a lower delay and also a lower power delay product (PDP).

Computer Science,Physics,Engineering
A Robust Hardened Latch Featuring Tolerance to Double-Node-Upset in 28nm CMOS for Spaceborne Application.

Yan Li,Xu Cheng,Chiyu Tan,Jun Han,Yuanfu Zhao,Liang Wang,Tongde Li,Mehdi B. Tahoori,Xiaoyang Zeng

DOI: https://doi.org/10.1109/tcsii.2020.3013338

2020-01-01

Abstract:Soft errors induced by high energy particles have been a severe concern in integrated circuits. Especially in advanced nanoscale technology nodes, the phenomenon of multinode-upset caused by charge sharing is becoming a crucial issue. However, this problem remains a challenge as there are only few mitigation methods. This brief demonstrates a cost-efficient latch named CROUT featuring double-node-upset tolerance. Integrating coupled Schmitt-triggers and four always-on high-threshold transistors, CROUT is highly reliable in the presence of double-node-upset. To further validate this, a test chip was fabricated in the 28nm CMOS process and tested in a heavy-ion radiation environment. The experimental results indicated that the radiation tolerance is about 2× higher than the standard latches. Moreover, compared to other state-of-the-art multi-nodeupset tolerant latches, its power-delay-product (PDP) is reduced by ~6×. The results show that our proposed latch is highly reliable and cost-effective for the space application, which further can be made into a standard cell to be integrated into large-scale circuits.
Cost-Efficient Solution to Overcome Latch-Up Path in 5 V-Tolerant I/O With Low-Voltage Biased NBL Isolation Ring in a 0.18-μm BCD Technology

Chen-Wei Hsu,Ming-Dou Ker

DOI: https://doi.org/10.1109/ted.2024.3350002

IF: 3.1

2024-03-06

IEEE Transactions on Electron Devices

Abstract:For IC products, the I/O pins of CMOS integrated circuits (ICs) must be verified by latch-up I-test with the JEDEC JESD78F.01 standard. The high-voltage (HV) circuits and the low-voltage (LV) circuits have been integrated together in a single chip by the Bipolar-CMOS-DMOS (BCD) technology. The LV circuits were often surrounded by the n-type buried layer (NBL) isolation ring from the common p-type substrate. In the mixed-voltage IC, a parasitic latch-up path exists from the 5 V-tolerant I/O to NBL isolation ring in a 0.18- BCD technology, which will cause the IC products failed to pass the latch-up I-test. In this work, a new isolation ring with embedded Schottky-barrier diode (SBD) was proposed and verified to overcome such a latch-up issue. According to the silicon results, the proposed Schottky-embedded isolation ring can significantly increase the holding voltage of the parasitic latch-up path. The potential latch-up danger from the 5 V-tolerant I/O to NBL isolation ring can be fully solved by the proposed Schottky-embedded isolation ring. In addition, the proposed Schottky-embedded isolation ring is fully process-compatible to the 0.18- BCD technology without additional mask layer adding into the process flow.

engineering, electrical & electronic,physics, applied
A Non-Redundant Latch with Key-Node-Upset Obstacle of Beneficial Efficiency for Harsh Environments Applications

Yan Liu,Yan Li,Xu Cheng,Jun Han,Xiaoyang Zeng

DOI: https://doi.org/10.1109/tcsi.2023.3237706

2023-01-01

IEEE Transactions on Circuits and Systems I Regular Papers

Abstract:With the scaling down of process, single event upset has been a critical issue for integrated circuits. It is much more likely to occur multiple-node upsets (MNUs) in CMOS ICs in advanced technology. However, the problem remains unsolved because of the lack of efficient methods. In this article, a non-redundant triple-node-upset(TNU)-tolerant latch with high reliability is proposed in 28 nm CMOS technology. The proposed latch named KOBE reduces the number of inner-sensitive nodes as well as the redundancy of the TNU-tolerant latch. In simulations, the proposed KOBE latch performs faster and lower power with higher reliability than most of the TNU-tolerant latches proposed before. The post-layout parasitic extracted simulations show that the proposed KOBE latch has an average improvement of 52.5% in a Power-Area-Delay Product (PADP) compared with the recently reported TNU-hardened latch at a supply voltage of 0.9 V, a working temperature of 27 °C. What’s more, by changing the working voltage and temperature, it is proved that the proposed KOBE latch has a better performance in a harsh environment. The results show that the proposed KOBE latch is of high beneficial efficiency and high reliability, thus can be used in safety-critical applications.
Study of Single Event Latch-Up Hardness for CMOS Devices with a Resistor in Front of DC-DC Converter

Jindou Xin,Xiang Zhu,Yingqi Ma,Jianwei Han

DOI: https://doi.org/10.3390/electronics12030550

IF: 2.9

2023-01-21

Electronics

Abstract:Bulk silicon Complementary Metal Oxide Semiconductor (CMOS) devices have distinct single event latch-up (SEL) problems in aerospace. Therefore, it is essential that CMOS devices are designed with appropriate circuit-level methods. Traditional resistor hardness satisfies the current aerospace trend of low cost, high performance, and miniaturization. Therefore conventional resistor hardness is often applied in circuit-level designs due to the reduction of latch-up current. In circuits containing a DC-DC buck converter, the resistor is connected to the back of the converter in the traditional method. However, the traditional method is unable to take devices out of the latch-up owing to the small resistance range. To solve this problem, the paper proposes an improved design for the resistor in front of the DC-DC buck converter. The proposed method enables the devices to exit the latch-up by increasing the resistance range according to the input characteristic of the DC-DC buck converter. The paper quantifies the range of the resistor through the parametric model containing the resistor and the DC-DC buck converter. Two CMOS devices are chosen for pulsed laser experiments, verifying that the proposed method increases the resistance ranges by 300% to 400% compared to the conventional method. It is also demonstrated that the proposed method exits the devices from latch-up within the resistor ranges. That is, the resistance ranges of 34 Ω~41 Ω and 51 Ω~56 Ω reduce the latch-up currents of the devices to below holding currents of 72.1 mA and 24.2 mA, respectively.

engineering, electrical & electronic,computer science, information systems,physics, applied
Performance of 200 V Cmos Compatible Auxiliary Cathode Lateral Insulated Gate Transistors

EMS NARAYANAN,GAJ AMARATUNGA,WI MILNE,Q HUANG

DOI: https://doi.org/10.1109/ispsd.1991.146077

1991-01-01

Abstract:The authors report the performance of various anode-shorted auxiliary cathode lateral insulated gate transistor (ACLIGT) structures fabricated using a 2.5 μm digital CMOS compatible HVIC process. The reverse breakdown voltage of the ACLIGT is comparable to that of an equivalent anode shorted lateral insulated gate transistor (LIGT). The results indicate that, by placing an auxiliary cathode and an extended p-buried layer of an anode-shorted LIGT, the holes flowing into the p-well can be diverted to overcome the latch-up problems of the LIGT in an ACLIGT. The LIGT shows latch-up at 140 mA, which corresponds to a current density of 340 A/cm2 while the ACLIGT structures do not show latch-up. The measured turn-off characteristics of the ACLIGT reveal a turn-off time of less than 250 ns while an equivalent LIGT shows a turn-off time of 350 ns
A New Scheme of the Low-Cost Multiple-Node-Upset-Tolerant Latch

Xiaole Cui,Qixue Zhang,Xiaoxin Cui

DOI: https://doi.org/10.1109/TDMR.2022.3141427

IF: 1.886

2022-01-01

IEEE Transactions on Device and Materials Reliability

Abstract:The single event upset (SEU) in integrated circuit (IC) occurs due to the striking of heavy charged particles. It results in the multiple node upset (MNU) problem frequently, with the scaling down of semiconductor devices. To address this challenge, the radiation hardening by design (RHBD) methods of circuit are required, in addition to the layout and device level radiation hardening techniques. The latch is one of the basic components of logic circuit, and the RHBD method of latch circuit is still an open issue. The Muller C-element (MCE) and/or the dual interlocked storage cell (DICE) based RHBD methods for latch circuit introduce too much area overhead, because of the redundant circuit structures. This work proposes a new design method of the low-cost multiple-node-upset-tolerant latch without the MCE and DICE modules. For the N-Node-Upset-Tolerant latch, the proposed RHBD latch only consists of N input-split inverters, 2N CMOS transmission gates and one Schmidt trigger. The generic design method is discussed, and a quadruple-node-upset-tolerant latch is designed and analyzed as an instance. The simulation results show that the RHBD latches designed by the proposed scheme consume less area and power compared with those previous counterparts.
Transient latchup characteristics in n-well CMOS

T. Ohzone,J. Iwata

DOI: https://doi.org/10.1109/16.144677

IF: 3.1

1992-01-01

IEEE Transactions on Electron Devices

Abstract:Transient latchup characteristics in scaled n-well CMOS triggered by pulsewidths less than 10 ns are presented by experiments and two-dimensional device simulations. Vibratile increasing latchup currents predicted by the simulations are experimentally observed for the devices with the n/sup +/-p/sup +/ spacing L longer than 8 mu m, and twin-peaks curves in supply currents just before latchup turn-on are also measured. Those experimental results are in relatively good agreement with the simulations triggered by a trapezoidal pulse. It is also reported that CMOS latchup susceptibilities to narrow trigger-pulse widths of less than 50 ns cannot be expected as L becomes as short as about 4 mu m.<>

engineering, electrical & electronic,physics, applied
Research on single event latch-up effect of CMOS based on TCAD

Maogong Jiang,Guicui Fu,Bo Wan,Meisi Jia,Yao Qiu

DOI: https://doi.org/10.1109/icrse.2017.8030787

2017-07-01

Abstract:Complementary metal oxide semiconductor (CMOS) is widely used in high reliability field, and is susceptible to single event latch-up (SEL) effect. Based on Technology Computer Aided Design (TCAD) simulation software, a typical CMOS structure is selected to simulate SEL effect and study the simulation results under different conditions. The relation between the simulation condition and the simulation result is concluded. The instructions for SEL-reinforcement design and applications of the CMOS components are obtained to improve the design reliability.
Review of Advanced CMOS Technology for Post-Moore Era

Ming Li

DOI: https://doi.org/10.1007/s11433-012-4930-3

2012-01-01

Science China Physics Mechanics and Astronomy

Abstract:The continuous downsizing of device has sustained Moore’s law in the past 40 years. As the power dissipation becomes more and more serious, a lot of emerging technologies have been adopted in the past decade to solve the short channel effect, leakage and performance degradation problems. In this paper, the emerging scaling technologies and device innovations, including high-k/metal gate, strain, ultra-shallow junction, tri-gate FinFET, extremely thin SOI and silicon nanowire FET will be reviewed and discussed in terms of the potential and challenge for post-Moore era.
CMOS Technology for the Nanometer Regime

甘学温,黄爱华,黄如,张兴

DOI: https://doi.org/10.3969/j.issn.1006-6055.2000.03.011

2000-01-01

Abstract:Key challenges on CMOS scaling down into nanometer regime are discussed, such as power supply and threshold voltage, short-channel effect, quantum effect, random doping distribution and wire delay. The device structure design for nanometer CMOS is analyzed. Several altrnative novel devices adapting for this era are discussed systematically, including SOI MOSFET, Double-gate and surrounding-gate MOSFET, recessed channel MOSFET, dynamic threshold MOSFET and low temperature CMOS, which are leading us approaching the ultimate limit of MOS device development.
A CMOS Compatible Lateral Emitter Switched Thyristor with Enhanced Turn-on Capability

W CHEN,GAJ AMARATUNGA,EMS NARAYANAN,J HUMPHREY,AGR EVANS

DOI: https://doi.org/10.1109/55.334675

IF: 4.8157

1994-01-01

IEEE Electron Device Letters

Abstract:A new Lateral Emitter Switched Thyristor structure (LEST) is proposed and experimentally verified. The structure differs from the conventional LEST in that it embeds a floating ohmic contact between the n- drift region and the n+ floating emitter. Both simulation and experimental results show that the device has an enhanced turn-on capability compared with the conventional LEST without deteriorating its other characteristics. The device is fabricated using a 3 mum CMOS process to have a 320 V breakdown voltage and a 0.7 V threshold voltage. Thyristor turn-on is observed at an anode voltage below 2 V. The maximum MOS controllable current density is in excess of 200 A/cm2 withf 5 V gate voltage.
A new criterion for transient latchup analysis in bulk CMOS

Yeu-Haw Yang,Chung-Yu Wu

DOI: https://doi.org/10.1109/16.30939

IF: 3.1

1989-07-01

IEEE Transactions on Electron Devices

Abstract:A criterion for transient latchup of p-n-p-n structures initiated by current pulses is described. Based on the circuit-orient model, the terminal currents and voltages of the transistors as a function of the pulsed triggering currents are characterized, and the charge storage within p-n-p-n structures is investigated. It is found that, to maintain the regeneration process, the change of charge stored in junction depletion capacitances of a p-n-p-n structure must be greater than a certain value independent of the triggering currents. Thus, the criterion is constructed in terms of the constant charge storage within a p-n-p-n structure. Applying the criterion, latchup immunity against pulsed triggering currents can be evaluated with respect to process and device parameters. Both SPICE simulations and experimental results confirm the validity of the proposed transient criterion. It is found that the large transit time of bipolar transistors and large well-substrate junction depletion capacitance lead to higher latchup immunity against pulsed triggering currents.<>

engineering, electrical & electronic,physics, applied
A Single Event Upset Tolerant Latch with Parallel Nodes.

Changyong Liu,Nianlong Liu,Zhiting Lin,Xiulong Wu,Chunyu Peng,Qiang Zhao,Xuan Li,Junning Chen,Xuan Zeng,Xiangdong Hu

DOI: https://doi.org/10.1587/elex.16.20190208

2019-01-01

IEICE Electronics Express

Abstract:A single event upset (SEU) tolerant latch has been put forward in the current paper. By means of the parallel nodes structure design together with the layout-level optimization design, the proposed design is capable of substantially improving the immunity to SEU. In comparison with the conventional latch, the stacked latch with isolation and the dual-modular-redundancy (DMR) latch with C-element, the simulation results based on the 65 nm CMOS process demonstrate that the proposed latch performs much better in SEU mitigation. For P-hit simulation, the proposed latch can achieve a correct output in the end, no matter the struck PMOS is at OFF state or ON state. For N-hit simulation, the proposed latch is also capable of mitigating the voltage transient and recovering to original state eventually.
An experimental extracted model for latchup analysis in CMOS process

Ye Li,Xiaohan Gong,Weiwei Xu,Zhiliang Hong,Dirk Killat

DOI: https://doi.org/10.1109/ASICON.2009.5351514

2009-01-01

Abstract:The latchup phenomenon is analyzed theoretically. A practical analytical model derived from Ebers-Moll formulations is proposed to analyze, simulate, and predict latchup, with favorable legitimacy and flexibility. The model parameters are extracted on 0.25 um CMOS process from experiments. The extracted model can predict latchup successfully in circuit level when applied in SPICE.

Scaling CMOS Technologies with Constant Latch-Up Immunity

Static CMOS Latch-Up Considerations in HVIC Design

Silicon-Controlled Rectifier Stacking Structure for High-Voltage ESD Protection Applications

Physics-based Analytical Modeling of CMOS Latchup

The Influence of an LIGBT on CMOS Latch Up in Power Integrated Circuit

Novel ESD Protection Design Methodology and Latchup Prevention for a 0.5-&Amp;#956;m CMOS ASIC Library

Low Power, and Highly Reliable Single Event Upset Immune Latch for Nanoscale CMOS Technologies

A Robust Hardened Latch Featuring Tolerance to Double-Node-Upset in 28nm CMOS for Spaceborne Application.

Cost-Efficient Solution to Overcome Latch-Up Path in 5 V-Tolerant I/O With Low-Voltage Biased NBL Isolation Ring in a 0.18-μm BCD Technology

A Non-Redundant Latch with Key-Node-Upset Obstacle of Beneficial Efficiency for Harsh Environments Applications

Study of Single Event Latch-Up Hardness for CMOS Devices with a Resistor in Front of DC-DC Converter

Performance of 200 V Cmos Compatible Auxiliary Cathode Lateral Insulated Gate Transistors

A New Scheme of the Low-Cost Multiple-Node-Upset-Tolerant Latch

Transient latchup characteristics in n-well CMOS

Research on single event latch-up effect of CMOS based on TCAD

Review of Advanced CMOS Technology for Post-Moore Era

CMOS Technology for the Nanometer Regime

A CMOS Compatible Lateral Emitter Switched Thyristor with Enhanced Turn-on Capability

A new criterion for transient latchup analysis in bulk CMOS

A Single Event Upset Tolerant Latch with Parallel Nodes.

An experimental extracted model for latchup analysis in CMOS process