Coarse‐grained β‐Si 3 N 4 powders prepared by combustion synthesis

Wei Cui,Fei Li,Zhaobo Tian,Jie Zhang,Songmo Du,Zhanglin Chen,Kexin Chen,Guanghua Liu
DOI: https://doi.org/10.1111/jace.17747
IF: 4.186
2021-03-02
Journal of the American Ceramic Society
Abstract:<p>Coarse‐grained β‐Si<sub>3</sub>N<sub>4</sub> powders were prepared by combustion synthesis under N<sub>2</sub> pressure of 6 MPa, with a low diluent content of no more than 10 wt% and high reaction temperature of &gt;1900°C. β‐Si<sub>3</sub>N<sub>4</sub> was obtained as the major phase in the products, except for a small amount of residual Si. The addition of carbon black was effective to reduce the residual Si, but resulted in the formation of β‐SiC when too much carbon black was used. The coarse‐grained β‐Si<sub>3</sub>N<sub>4</sub> powders consisted of β‐Si<sub>3</sub>N<sub>4</sub> crystals with an average thickness of more than 10 µm, and some crystals were thicker than 20 µm. The growth mechanism of the coarse β‐Si<sub>3</sub>N<sub>4</sub> crystals was discussed, associated with the particular reaction conditions in combustion synthesis.</p>
materials science, ceramics
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