Abstract:In this work an extensive characterization over XeCl multishot laser irradiation was performed at different energy densities and with different thicknesses of graphitic coating superimposed on P and Al implanted 4H–SiC epitaxial layers. It was noted that at 0.6 J/cm2 the 180 nm coating provides a smooth surface unlike lower thicknesses or uncoated treatments. The μ-Raman investigation showed the crystalline quality as a function of the energy density. Through Medium Angle Annular Dark Field-Scanning Transmission Electron Microscopy (MAADF-STEM) and High Angle Annular Dark Field (HAADF)-STEM investigations, the absence of extended defects and the presence of regions with higher density of carbon interstitials (C i ) was revealed. Circular Transfer Length Method (CTLM) measurements demonstrated how irradiation at 0.9 J/cm2 succeeded to reach values of (7.28 ± 1.15) × 102 Ω/sq, lower than the findings achieved with furnace treatment at 1650 °C. However, electrical characterization carried out through μ-Raman investigation over the Folded Transverse Acoustic (FTA) modes showed consistent activation of the order of 7 × 1019 cm−3 at 0.6 J/cm2 while exhibited CTLM extracted sheet resistance of (3.17 ± 0.06) × 104 Ω/sq. Therefore, this work highlights the contrast between fast processes as the accommodation and ionization of dopant atoms in substitutional positions and slow processes such as the recovery of ion implantation damage. By offering faster processing rates, lower thermal budgets, and high spatial control over the annealing process, laser annealing on 4H–SiC as a post-implantation thermal treatment approach presents several advantages over conventional annealing methods. This study marks a significant progress in comprehending and improving the effectiveness of laser annealing on 4H–SiC.

Preparation of crystalline SiC coating from Si and C powder mixture using laser sublimation technique

Optimal temperature of crystallization and photoluminescence of SiC/Si (100) film prepared by pulsed ArF excimer laser deposition

The Preparation of Single-Crystal 4H-Sic Film by Pulsed XeCl Laser Deposition

Coating on SiC Surface by Solid State Reaction With Cr Powder

Single-step additive manufacturing of silicon carbide through laser-induced phase separation

Fabrication of SiC particulates reinforced MoSi2 composite coating by laser cladding

In-Situ Synthesis of Mosi2/Sic Composite Coating by Laser Cladding

Growth of SiC Thin Films on (100) and (111) Silicon by Pulsed Laser Deposition Combined with a Vacuum Annealing Process

Fabrication of Silicon Carbide (sic) Coatings from Pyrolysis of Polycarbosilane/Aluminum

Microstructure of Laser-Clad SiC-(Ni Alloy) Composite Coating

Ablation mechanism and morphology evolution of the HfC-SiC coating for C/C composites deposited by supersonic atmospheric plasma spraying

Femtosecond laser modification of silicon carbide substrates and its influence on CMP process

Conformal and Stoichiometric Chemical Vapor Deposition of Silicon Carbide onto Ultradeep Heterogeneous Micropores by Controlling the Initial Nucleation Stage

Controllable reduction of absorbance and two-step reaction for 3D-printed SiC ceramics with micron-level periodic structure

Phase separation during the direct powder bed fusion of SiC

Exploring crystal recovery and dopant activation in coated laser annealing on ion implanted 4H–SiC epitaxial layers

Fabricating physicochemical microstructures with super hydrophilicity on Cf/SiC composites surface via picosecond-laser induced ablation

Preparation and Characterization of SiC Layer of Coated Fuel Particles for High-Temperature Gas-Cooled Reactor

Fabrication of porous SiC nanostructured coatings on C/C composite by laser chemical vapor deposition for improving the thermal shock resistance

Using in-situ conversed nano SiC to bond UHTC particles and construct anti-ablation coating

Influence of Silicon Carbide on Direct Powder Bed Selective Laser Process (Sintering/Melting) of Alumina