Abstract:Two-dimensional (2D) ferroelectric semiconductors present opportunities for integrating ferroelectrics into high-density ultrathin nanoelectronics. Among the few synthesized 2D ferroelectrics, $\alpha$-In$_2$Se$_3$, known for its electrically addressable vertical polarization has attracted significant interest. However, the understanding of many fundamental characteristics of this material, such as the existence of spontaneous in-plane polarization and switching mechanisms, remains controversial, marked by conflicting experimental and theoretical results. Here, our combined experimental characterizations with piezoresponse force microscope and symmetry analysis conclusively dismiss previous claims of in-plane ferroelectricity in $\alpha$-In$_2$Se$_3$. The processes of vertical polarization switching in monolayer $\alpha$-In$_2$Se$_3$ are explored with deep-learning-assisted large-scale molecular dynamics simulations, revealing atomistic mechanisms fundamentally different from those of bulk ferroelectrics. Despite lacking in-plane effective polarization, 1D domain walls can be moved by both out-of-plane and in-plane fields, exhibiting unusual avalanche dynamics characterized by abrupt, intermittent moving patterns. The propagating velocity at various temperatures, field orientations, and strengths can be statistically described with a universal creep equation, featuring a dynamical exponent of 2 that is distinct from all known values for elastic interfaces moving in disordered media. This work rectifies a long-held misunderstanding regarding the in-plane ferroelectricity of $\alpha$-In$_2$Se$_3$, and the quantitative characterizations of domain wall velocity will hold broad implications for both the fundamental understanding and technological applications of 2D ferroelectrics.

Synthesis and Phase Transition of Large‐Area Layered Ferroelectric Semiconductor α‐In2Se3 via 2D Solid‐Phase Crystallization

Controlled Synthesis of High-Quality Monolayered Α-In2se3 Via Physical Vapor Deposition.

Controllable growth α-In2Se3 flakes by chemical vapor deposition

Controlled Growth of Atomically Thin In2se3 Flakes by Van Der Waals Epitaxy

Epitaxial Growth of Large Area Two-Dimensional Ferroelectric α-In 2 Se 3

Quasi-equilibrium growth of inch-scale single-crystal monolayer α-In2Se3 on fluor-phlogopite

Reversible Thermally Driven Phase Change of Layered In2Se3 for Integrated Photonics.

Intrinsic Ferroelectric Switching in Two-Dimensional α-In2Se3

Novel Method for the Growth of Two-Dimensional Layered InSe Thin Films on Amorphous Substrate by Molecular Beam Epitaxy

Atomic-Scale Observation of Reversible Thermally Driven Phase Transformation in 2D In2Se3

Substrate-induced phase control of In2Se3 thin films

Phase Tailoring of In2Se3 Toward van der Waals Vertical Heterostructures via Selenization of γ‐InSe Semiconductor

Phase-controllable Large-Area Two-Dimensional in 2 Se 3 and Ferroelectric Heterophase Junction

Lithium Ion Intercalation-Induced Metal-Insulator Transition in Inclined-Standing Grown 2D Non-Layered Cr2S3 Nanosheets

Intrinsic Ferroelectric Switching in Two-Dimensional α-In 2 Se 3

Periodic Ferroelectric Stripe Domains in α-In 2 Se 3 Nanoflakes Grown via Reverse-Flow Chemical Vapor Deposition

Intrinsic ferroelectric switching in two-dimension $α$-In$_2$Se$_3$

Wafer-scale growth of two-dimensional, phase-pure InSe

First-principles investigation of structural and electronic properties of α phase In2Se3

Large-area optoelectronic-grade InSe thin films via controlled phase evolution

Ultrathin two-dimensional van der Waals asymmetric ferroelectric semiconductor junctions