Abstract:In this study, large‐area 2D layered ferroelectric semiconductor α‐In2Se3 on amorphous SiO2 substrates is successfully synthesized at a cm2‐scale and explored its phase transition during synthesis through a 2D solid‐phase crystallization (2DSPC) method with a SiO2 encapsulation. The formation of highly crystalline 2D layered α‐In2Se3 is observed through the real‐time β‐phase to α‐phase transition at room temperature. Ferroelectric semiconductor α‐In2Se3 has gained significant attention due to its favorable physical characteristics, including an appropriate bandgap (≈1.4 eV) for semiconductor devices, intercorrelated out‐of‐plane and in‐plane polarization, and high Curie temperature (>200 °C). Combining its semiconducting and ferroelectric properties, α‐In2Se3 holds promise for developing many innovative applications. However, the large‐scale synthesis of uniform layered α‐In2Se3 for practical use and a comprehensive understanding of its phase transition during synthesis are lacking. In this study, layered α‐In2Se3 on amorphous SiO2 substrates at a cm2‐scale is successfully synthesized and explored its phase transition during synthesis, by using a 2D solid‐phase crystallization (2DSPC) method with a SiO2 encapsulation. The formation of highly crystalline 2D layered α‐In2Se3 is observed through the real‐time β‐phase to α‐phase transition at room temperature. The electrical (field‐effect mobility μFE ≈ 1 cm2 V−1s−1), optical, and ferroelectric properties of the synthesized α‐In2Se3 thin films are further investigated. This study contributes to the understanding and control of stoichiometry and phases of In2Se3 and provides an efficient approach for synthesizing large‐area 2D layered α‐In2Se3.

Epitaxial Growth of Large Area Two-Dimensional Ferroelectric α-In 2 Se 3

Controlled Growth of Atomically Thin In2se3 Flakes by Van Der Waals Epitaxy

Quasi-equilibrium growth of inch-scale single-crystal monolayer α-In2Se3 on fluor-phlogopite

Growth of large-area 2D MoS₂(₁-x) Se₂x semiconductor alloys.

Controlled Synthesis of High-Quality Monolayered Α-In2se3 Via Physical Vapor Deposition.

Semiconductors: Growth of Large‐Area 2D MoS2(1‐x)Se2x Semiconductor Alloys (adv. Mater. 17/2014)

Controllable growth α-In2Se3 flakes by chemical vapor deposition

Synthesis and Phase Transition of Large‐Area Layered Ferroelectric Semiconductor α‐In2Se3 via 2D Solid‐Phase Crystallization

Two-dimensional epitaxy of SnSe film on In2Se3 induced by intrinsic out-of-plane ferroelectricity

Giant Bandgap Engineering in Two-Dimensional Ferroelectric Α-In2se3.

Confined Van Der Waals Epitaxial Growth of Two-Dimensional Large Single-Crystal In2Se3 for Flexible Broadband Photodetectors

Novel Method for the Growth of Two-Dimensional Layered InSe Thin Films on Amorphous Substrate by Molecular Beam Epitaxy

Thickness-Dependent Evolutions of Surface Reconstruction and Band Structures in Epitaxial Β–in2se3 Thin Films

Wafer-scale growth of two-dimensional, phase-pure InSe

Epitaxial Growth of Large-Area and Highly Crystalline Anisotropic ReSe2 Atomic Layer

Ultrathin two-dimensional van der Waals asymmetric ferroelectric semiconductor junctions

Large‐area Growth of Ferroelectric Two‐dimensional Γ‐In2Se3 Semiconductor by Spray Pyrolysis for Next‐Generation Memory

IP and OOP ferroelectricity in hexagonal γ-In2Se3 nanoflakes grown by chemical vapor deposition

Periodic Ferroelectric Stripe Domains in α-In 2 Se 3 Nanoflakes Grown via Reverse-Flow Chemical Vapor Deposition

Epitaxial growth of atomically thin Ga2Se2 films on c-plane sapphire substrates

Volume‐Confined Fabrication of Large‐Scale Single‐Crystalline Molecular Ferroelectric Thin Films and Their Applications in 2D Materials