Abstract:The authors report on the fabrication and application of a ferroelectric transistor integrated with a van der Waals ferroelectrics heterostructure (CuInP2S6/α‐In2Se3). Leveraging enhanced polarization originating from the dipole coupling, the fabricated device exhibits a large memory window and nonvolatile memory characteristics with long retention time and stable cyclic endurance, providing a promising pathway for exploring low‐dimensional ferroelectronics. To address the demands of emerging data‐centric computing applications, ferroelectric field‐effect transistors (Fe‐FETs) are considered the forefront of semiconductor electronics owing to their energy and area efficiency and merged logic–memory functionalities. Herein, the fabrication and application of an Fe‐FET, which is integrated with a van der Waals ferroelectrics heterostructure (CuInP2S6/α‐In2Se3), is reported. Leveraging enhanced polarization originating from the dipole coupling of CIPS and α‐In2Se3, the fabricated Fe‐FET exhibits a large memory window of 14.5 V at VGS = ±10 V, reaching a memory window to sweep range of ≈72%. Piezoelectric force microscopy measurements confirm the enhanced polarization‐induced wider hysteresis loop of the double‐stacked ferroelectrics compared to single ferroelectric layers. The Landau–Khalatnikov theory is extended to analyze the ferroelectric characteristics of a ferroelectric heterostructure, providing detailed explanations of the hysteresis behaviors and enhanced memory window formation. The fabricated Fe‐FET shows nonvolatile memory characteristics, with a high on/off current ratio of over 106, long retention time (>104 s), and stable cyclic endurance (>104 cycles). Furthermore, the applicability of the ferroelectrics heterostructure is investigated for artificial synapses and for hardware neural networks through training and inference simulation. These results provide a promising pathway for exploring low‐dimensional ferroelectronics.

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Two‐dimensional In2Se3: A Rising Advanced Material for Ferroelectric Data Storage

Controllable growth α-In2Se3 flakes by chemical vapor deposition

Phase-controllable Large-Area Two-Dimensional in 2 Se 3 and Ferroelectric Heterophase Junction

Non-volatile Ferroelectric Memory Effect in Ultrathin Α-In2se3

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Nonvolatile Ferroelectric Memory Effect in Ultrathin Α‐in2se3

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Ferroelectric Switching Behavior in Two-Dimensional Semiconductor Α-In2se3 for Nonvolatile Memory

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Laterally gated ferroelectric field effect transistor (LG-FeFET) using α-In2Se3 for stacked in-memory computing array

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Flash In2Se3 for neuromorphic computing

Low-temperature Processed Beta-Phase In2Se3 Ferroelectric Semiconductor Thin Film Transistors

Ferroelectric Field‐Effect‐Transistor Integrated with Ferroelectrics Heterostructure

Epitaxial Integration of Tetragonal Bifeo3 with Silicon for Nonvolatile Memory Applications

Thin-Film Transistors from Electrochemically Exfoliated In2Se3 Nanosheets

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Quasi-equilibrium growth of inch-scale single-crystal monolayer α-In2Se3 on fluor-phlogopite

Integrating Epitaxial-Like Pb(Zr,Ti)O3 Thin-Film into Silicon for Next-Generation Ferroelectric Field-Effect Transistor