Abstract:Commercial EUV lithographic systems require multilayers with higher reflectance and better stability than those published to date. This work represents our effort to meet these specifications. Interface-engineered Mo-Si multilayers with 70% reflectance and 0.545-nm bandwidth at 13.5-nm wavelength and 71% reflectance with 0.49-nm bandwidth at 12.7-nm wavelength were developed. These results were achieved with 50 bilayers. These new multilayers consist of alternating Mo and Si layers separated by thin boron carbide layers. Depositing boron carbide on the interfaces leads to reduction in molybdenum silicide formation of the Mo-on-Si interfaces. Bilayer contraction is reduced by 30%, implying that there is less intermixing of Mo and Si to form silicide. As a result, the Mo-on-Si interfaces are sharper in interface-engineered multilayers than in standard Mo-Si multilayers. The optimum boron carbide thicknesses have been determined and appear to be different for the Mo-on-Si and Si-on-Mo interfaces. The best results were obtained with 0.4-nm-thick boron carbide layers for the Mo-on-Si interfaces and 0.25-nm-thick boron carbide layers for the Si-on-Mo interfaces. The increase in reflectance is consistent with multilayers having sharper and smoother interfaces. A significant improvement in oxidation resistance of EUV multilayers has been achieved with ruthenium-terminated Mo-Si multilayers. The best capping-layer design consists of a Ru layer separated from the top Si layer by a boron carbide diffusion barrier. This design achieves high reflectance and the best oxidation resistance during EUV exposure in a water-vapor (oxidizing) environment. Electron-beam exposures of 4.5 h (in an effort to simulate EUV exposure perturbation of the top layers) in the presence of 5×10−7-Torr water-vapor partial pressure show no measurable reflectance loss and no increase in the oxide thickness of Ru-terminated multilayers. © 2002 Society of Photo-Optical Instrumentation Engineers.

The refined EUV mask model

Metrology of EUV Masks by EUV-Scatterometry and Finite Element Analysis

Ion beam processing for critical EUV photomask process steps: mask blank deposition and photomask absorber etch

Process optimization for performance improvement in Mo/Si multilayers for EUV mask blanks

Theoretical and numerical analysis of EUV lithography mask blank fabrication

Experimental investigation of a high-k reticle absorber system for EUV lithography

Mask innovations on the eve of High NA EUV lithography

Progress in the fabrication of low-defect density mask blanks for extreme ultraviolet lithography

Platinum-based alloy absorber with improved etching properties for next-generation EUV mask

Comparison of EUV Photomask Metrology Between CD-AFM and TEM

Measurements of CD and sidewall profile of EUV photomask structures using CD-AFM and tilting-AFM

Mask structure optimization for beyond EUV lithography

Applications of RCWA on EUV mask optics

Reflective X-ray masks for X-ray lithography

Measurement of Resist Transmittance at Extreme Ultraviolet Wavelength Using the Extreme Ultraviolet Reflectometer

Mo/Si Multilayers with Different Barrier Layers for Applications as Extreme Ultraviolet Mirrors

Improved reflectance and stability of Mo-Si multilayers

High-NA EUV lithography: current status and outlook for the future

Monte Carlo Simulation of Electron Transmission Through the Scattering Masks with Angular Limitation for Projection Electron Lithography

Possible extreme ultraviolet mask thermal deformation during exposure

Design and performance of capping layers for extreme-ultraviolet multilayer mirrors