Abstract:Commercial EUV lithographic systems require multilayers with higher reflectance and better stability than those published to date. This work represents our effort to meet these specifications. Interface-engineered Mo-Si multilayers with 70% reflectance and 0.545-nm bandwidth at 13.5-nm wavelength and 71% reflectance with 0.49-nm bandwidth at 12.7-nm wavelength were developed. These results were achieved with 50 bilayers. These new multilayers consist of alternating Mo and Si layers separated by thin boron carbide layers. Depositing boron carbide on the interfaces leads to reduction in molybdenum silicide formation of the Mo-on-Si interfaces. Bilayer contraction is reduced by 30%, implying that there is less intermixing of Mo and Si to form silicide. As a result, the Mo-on-Si interfaces are sharper in interface-engineered multilayers than in standard Mo-Si multilayers. The optimum boron carbide thicknesses have been determined and appear to be different for the Mo-on-Si and Si-on-Mo interfaces. The best results were obtained with 0.4-nm-thick boron carbide layers for the Mo-on-Si interfaces and 0.25-nm-thick boron carbide layers for the Si-on-Mo interfaces. The increase in reflectance is consistent with multilayers having sharper and smoother interfaces. A significant improvement in oxidation resistance of EUV multilayers has been achieved with ruthenium-terminated Mo-Si multilayers. The best capping-layer design consists of a Ru layer separated from the top Si layer by a boron carbide diffusion barrier. This design achieves high reflectance and the best oxidation resistance during EUV exposure in a water-vapor (oxidizing) environment. Electron-beam exposures of 4.5 h (in an effort to simulate EUV exposure perturbation of the top layers) in the presence of 5×10−7-Torr water-vapor partial pressure show no measurable reflectance loss and no increase in the oxide thickness of Ru-terminated multilayers. © 2002 Society of Photo-Optical Instrumentation Engineers.

High-performance Mo-Si multilayer coatings for extreme-ultraviolet lithography by ion-beam deposition.

Atomic-precision multilayer coating of the first set of optics for an extreme-ultraviolet lithography prototype system

Improved reflectance and stability of Mo-Si multilayers

Process optimization for performance improvement in Mo/Si multilayers for EUV mask blanks

Effects of mo/si multilayer coatings on the imaging characteristics of an extreme-ultraviolet lithography system

Mo/Si Multilayers with Different Barrier Layers for Applications as Extreme Ultraviolet Mirrors

Immersion Barc for Hyper Na Applications Ii

Anti-reflection Coating at 550 Nm Fabricated by Atomic Layer Deposition

Ion beam processing for critical EUV photomask process steps: mask blank deposition and photomask absorber etch

Multilayer coatings for narrow-band imaging in the extreme ultraviolet

Depth-graded Mo/Si multilayer coatings for hard x-rays

Subwavelength single layer absorption resonance antireflection coatings

Design and performance of capping layers for extreme-ultraviolet multilayer mirrors

Design of multilayer extreme-ultraviolet mirrors for enhanced reflectivity

Aperiodic multilayer mirrors for efficient broadband reflection in the extreme ultraviolet

EUV reflectance and scattering of Mo/Si multilayers on differently polished substrates

Optical Multicoating Using Low-Refractive-Index SiO2 Optical Thin Films Deposited by Sputtering and Electron Beam Evaporation

A comparative study of the interfacial roughness correlation and propagation in Mo/Si multilayers deposited using RF-magnetron sputtering on silicon, ule and zerodur substrates

Performance, structure, and stability of SiC/Al multilayer films for extreme ultraviolet applications

Ion-assisted sputter deposition of molybdenum-silicon multilayers