Abstract:Semiconductor manufacturing depends on the development of new processes, advanced patterning, and novel materials to create smaller and higher performing devices to follow the industry roadmaps for applications for computing and systems (such as smartphones and servers). For dynamic random access memory (DRAM) applications, the biggest efforts are engaged in scaling and shrinking of the nodes, and these then affect the area density, performance, and cost of the DRAM cells. However, while we are reaching a slowdown in dimension-scaling, more innovation is needed to sustain the high aspect ratios required in the capacitor’s architecture—whether it is moving toward 3D architectures or developing new materials to sustain the challenge of scaling. To accelerate the learning, it is essential to screen novel hard mask (HM) materials in a rapid fashion to speed their development. While EUV (extreme ultraviolet—a wavelength of 13.5 nm) lithography requires 300 mm wafers, electron beam lithography (EBL) generates nanoscale patterns in a maskless manner on smaller substrates (from 300 mm wafers to 10 mm2 coupons) mimicking sub-50 nm EUV features. The primary goal of this work is to create a path for rapid screening of HM materials that are still under early phase development and which are prepared in small chamber tools (coupon chambers) and, therefore, not ready for 300 mm process integration. While the features investigated of 44 nm half pitch seem extremely reasonable for e-beam, the requirements and the approaches used to address the needed patterned area, resolution, speed, and uniformity exceed the standard conditions previously reported in the literature. Each aspect will be evaluated in the context of a “dots on the fly,” or DOTF, patterning technique.

Experimental investigation of a high-k reticle absorber system for EUV lithography

Simulation and Experimental Investigation of Immersion Flow Field in Immersion Lithography

Immersion Barc for Hyper Na Applications Ii

Metrology of EUV Masks by EUV-Scatterometry and Finite Element Analysis

Mask innovations on the eve of High NA EUV lithography

The refined EUV mask model

Ion beam processing for critical EUV photomask process steps: mask blank deposition and photomask absorber etch

Measurements of ion fluxes in extreme ultraviolet-induced plasma of new EUV-beam-line 2 nanolithography research machine and their applications for optical component tests

Rigorous Simulation of 3D Masks

High-NA EUV lithography: current status and outlook for the future

Rapid prototyping of etch test structures for hard mask development using electron beam lithography

Rigorous Simulations of 3D Patterns on Extreme Ultraviolet Lithography Masks

Theoretical and numerical analysis of EUV lithography mask blank fabrication

Lithography Process for KrF in the Sub-0.11 Μm Node

Compact Ultraviolet Light-Emitting Diode-Based Lithography Illumination System with Tunable Coherent Factor

Process optimization for performance improvement in Mo/Si multilayers for EUV mask blanks

High-end EUV photomask repairs for 5nm technology and beyond

Fundamentals of the reaction-diffusion process in model EUV photoresists

Understanding Etch Properties of Advanced Chemically Amplified EUV Resist

Progress in the fabrication of low-defect density mask blanks for extreme ultraviolet lithography

Applications of RCWA on EUV mask optics