Abstract:Extreme ultraviolet (EUV) lithography is seen as a main candidate for production of future generation computer technology. Due to the short wavelength of EUV light (around 13 nm) novel reflective masks have to be used in the production process. A prerequisite to meet the high quality requirements for these EUV masks is a simple and accurate method for absorber pattern profile characterization. In our previous work we demonstrated that the Finite Element Method (FEM) is very well suited for the simulation of EUV scatterometry and can be used to reconstruct EUV mask profiles from experimental scatterometric data. In this contribution we apply an indirect metrology method to periodic EUV line masks with different critical dimensions (140 nm and 540 nm) over a large range of duty cycles (1:2, ..., 1:20). We quantitatively compare the reconstructed absorber pattern parameters to values obtained from direct AFM and CD-SEM measurements. We analyze the reliability of the reconstruction for the given experimental data. For the CD of the absorber lines, the comparison shows agreement of the order of 1nm. Furthermore we discuss special numerical techniques like domain decomposition algorithms and high order finite elements and their importance for fast and accurate solution of the inverse problem.

What problem does this paper attempt to address?

The problem that this paper attempts to solve is the characterization of the absorption pattern profile under the high - quality requirements of EUV masks in extreme ultraviolet (EUV) lithography technology. Due to the short wavelength of EUV light (about 13nm), new - type reflective masks need to be used in the production process. In order to meet the high - precision requirements of these EUV masks, a simple and accurate method is required to characterize the absorption pattern profile. Specifically, the paper explores how to reconstruct the absorption pattern parameters of EUV masks by combining EUV - scatterometry with finite element analysis (Finite Element Analysis, FEA), and makes a quantitative comparison with the results measured directly by atomic force microscopy (AFM) and critical - dimension scanning electron microscopy (CD - SEM) to verify the reliability of the reconstruction method. ### Main contributions of the paper 1. **Proposed an indirect metrology method**: Through the combination of EUV - scatterometry and finite element analysis, periodic EUV line masks with different critical dimensions (140nm and 540nm) and duty cycles (1:2 to 1:20) were studied. 2. **Quantitatively compared the reconstruction results with the direct measurement results**: The reconstructed absorption pattern parameters were compared with the direct AFM and CD - SEM measurement results, and the reliability of the reconstruction method was analyzed. 3. **Discussed the importance of numerical techniques**: Specifically mentioned the importance of domain decomposition algorithms and high - order finite element methods in quickly and accurately solving inverse problems. ### Specific problems - **High - quality requirements of EUV masks**: Due to the short wavelength of EUV light, the feature sizes on the masks are very small, and traditional direct measurement methods (such as AFM and CD - SEM) are difficult to achieve the required precision. - **Characterization of the absorption pattern profile**: A non - destructive method is required to characterize the absorption pattern profile on the mask, especially for the characterization of periodic structures. - **Solution of inverse problems**: Reconstructing the absorption pattern parameters from scatterometry data is a complex inverse problem and requires efficient numerical methods to solve. ### Solutions - **EUV - scatterometry**: Utilize the scattering characteristics of EUV light and obtain the geometric information of the mask by measuring the intensities at different diffraction angles. - **Finite element analysis**: Use the finite element method to simulate the EUV scattering process and reconstruct the absorption pattern parameters from the experimental data through an optimization algorithm. - **Numerical techniques**: Introduce domain decomposition algorithms and high - order finite element methods to improve the efficiency and accuracy of numerical simulations. ### Conclusion The paper demonstrates the application potential of EUV - scatterometry combined with finite element analysis in the characterization of the absorption pattern profile of EUV masks. By comparing with the direct measurement results, the reliability and accuracy of this method are verified, especially achieving a precision of 1nm in CD measurement. In addition, the paper also discusses the important role of numerical techniques in improving the efficiency of solving inverse problems.

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