Mask structure optimization for beyond EUV lithography

Ziqi Li,Lisong Dong,Xu Ma,Yayi Wei

DOI: https://doi.org/10.1364/ol.523596

IF: 3.6

2024-06-19

Optics Letters

Abstract:Ziqi Li, Lisong Dong, Ma Xu, Yayi Wei Beyond extreme ultraviolet (BEUV) lithography with a 6?×?nm wavelength is regarded as a future technique to continue the pattern ... [Opt. Lett. 49, 3604-3607 (2024)]

optics

What problem does this paper attempt to address?

A Method for Extending Depth of Focus in STED Nanolithography

Xiang Hao,Cuifang Kuang,Yanghui Li,Xu Liu

DOI: https://doi.org/10.1088/2040-8978/14/4/045702

IF: 2.1

2012-01-01

Journal of Optics

Abstract:We present a theoretical approach to extend depth of focus (DOF), which is based on the integrated utilization of the cylindrical polarization effect, circular symmetrical phase mask and interference effect. Simulation results show that this method can generate over 4λ and 2λ DOFs when objective lenses with NA = 0.9 and 1.4 are introduced respectively, while maintaining the horizontal size beyond the diffraction limit. The DOF is over two times that by conventional approaches under the same conditions. Such a focal spot with extended DOF, although stemming from the STED microscope concept, is applicable in nanolithography.
Linearized EUV mask optimization based on the adjoint method

Pinxuan He,Jiamin Liu,Honggang Gu,Hao Jiang,Shiyuan Liu

DOI: https://doi.org/10.1364/oe.517783

IF: 3.8

2024-02-24

Optics Express

Abstract:Pinxuan He, Jiamin Liu, Honggang Gu, Hao Jiang, Shiyuan Liu Mask optimization, a compensation method for the thick mask effect and the optical proximity effect in projection lithography, is essential ... [Opt. Express 32, 8415-8424 (2024)]

optics
Mask innovations on the eve of High NA EUV lithography

Vicky Philipsen,Andreas Frommhold,Devesh Thakare,Guillaume Libeert,Inhwan Lee,Joern-Holger Franke,Joost Bekaert,Lieve Van Look,Nick Pellens,Peter De Bisschop,Rik Jonckheere,Tatiana Kovalevich,Vincent Wiaux,Eric Hendrickx

DOI: https://doi.org/10.35848/1347-4065/ad38c7

IF: 1.5

2024-03-28

Japanese Journal of Applied Physics

Abstract:Abstract We are on the eve of the next big step in lithography technology with the introduction of High numerical aperture EUV. The change from NA 0.33 to 0.55 in EUV lithography is an increase of 67%, which is the largest jump in the last decades, and puts tight requirements on focus and edge placement. Moreover, the lithography system has changed from fully isomorphic, i.e., same demagnification in all directions, to an anamorphic system, i.e., the demagnification in scan direction has doubled with respect to the slit direction. At imec we are fostering the ecosystem surrounding the lithography tool. In this paper we focus on the imaging and mask innovations supporting the EUV ecosystem, which are categorized into four areas: novel absorber masks, stitching, mask variability, and innovative imaging solutions. The current drivers of IC manufacturers implementing (High NA) EUVL are reduction of the EUV exposure dose and decrease in wafer stochastics. We discuss how these four areas have the potential to deliver in EUVL an increase in productivity, an improvement in the process window and a reduction in stochasticity at wafer level.

physics, applied
Mitigating the forbidden pitch of extreme ultraviolet lithography using mask optimization based on genetic algorithm

Yayi Wei,Lisong Dong,Taian Fan,Ling Ma,Xu Ma

DOI: https://doi.org/10.1117/1.JMM.21.4.043204

2022-10-01

Journal of Micro/Nanopatterning, Materials, and Metrology

Abstract:Abstract. Background In advanced technology nodes, forbidden pitches (FPs) can reduce the depth of focus and limit the overlapped process window of lithography. In extreme ultraviolet (EUV) lithography, one pattern in a different orientation or different position of arc slit field will have a different shadowing effect, due to the chief ray angle and azimuthal angle of the incident light. Therefore, it is necessary to mitigate the FP effect of EUV lithography. Aim With the purpose of mitigating the phenomenon of FPs in the arc slit exposure field, we propose an optimization method based on a genetic algorithm (GA). Approach The optimization method is derived from the basic flow of the GA. Three mask parameters are selected as the variables, including the mask bias and the width and position of the assist feature. The cost function is designed to evaluate the process window, normalized image log slope, and contrast of different fields in the arc slit. After multiple iterations, an optimal combination of three variables is obtained. Results The simulation results show that the optimized mask structure given by the proposed method in the arc slit exposure field can improve the process window in the horizontal and vertical orientations, respectively. Conclusions The limitation of FPs to the process window is removed using mask optimization based on the GA. The proposed optimization method has the potential to be an effect candidate for FPs mitigation.

Materials Science,Physics,Engineering
Compact Ultraviolet Light-Emitting Diode-Based Lithography Illumination System with Tunable Coherent Factor

Jianghui Liu,Song Hu,Qiang Li

DOI: https://doi.org/10.1117/1.oe.62.4.045103

IF: 1.3

2023-01-01

Optical Engineering

Abstract:Abstract. Optimization of the illumination system of an ultraviolet light-emitting diode (UVLED)-based lithography system by reducing the system complexity and spatial volume has been a research focus. This work proposes a compact lithography illumination system that applies a specially designed embedded compound parabolic concentrator (ECPC) to replace the traditional collimation module and the zoom lenses module. The ECPC, comprised of two detachable parabolic surfaces, precisely collimates all light beams from the UVLED to a preset divergence angle of 6 deg and provides an adjustable lithography coherent factor. The final illumination system offers a square illumination field with a uniformity of up to 1.3% in the large coherent factor and a linearly adjustable numerical aperture in the range of 0.02 ∼ 0.04. The final exposure result of 0.7 μm based on the experiment setup further verifies the performance of the designed illumination system.
Maskless photolithography based on ultraviolet micro-LEDs and direct writing method for improving pattern resolution

Cuili Tan,Tianyang Ren,Daopeng Qu,Xinyi Shan,Runze Lin,Zhihao Zhang,Fusheng Li,Qiuyi Han,Xugao Cui,Ruiqian Guo,Shanduan Zhang,Pengfei Tian

DOI: https://doi.org/10.1364/oe.520809

IF: 3.8

2024-05-09

Optics Express

Abstract:Cuili Tan, Tianyang Ren, Daopeng Qu, Xinyi Shan, Runze Lin, Zhihao Zhang, Fusheng Li, Qiuyi Han, Xugao Cui, Ruiqian Guo, Shanduan Zhang, Pengfei Tian Ultraviolet micro-LEDs show great potential as a light source for maskless photolithography. However, there are few reports on micro-LED ... [Opt. Express 32, 18916-18930 (2024)]

optics
Process Window, and Process Optimization in Both Low and High Na EUV Processes for Advanced Logic Technologies Nodes

Yanli Li,Qiang Wu,Xianhe Liu,Xiaona Zhu,Shaofeng Yu

DOI: https://doi.org/10.1109/cstic55103.2022.9856929

2022-01-01

Abstract:As we know, if we consider Extreme Ultra-Violet (EUV) stochastics induced defectivity, the minimum pitch for the line/space is around 36~ 40 nm and 48 ~ 50 nm for the contact holes and vias in 0.33 NA EUV lithography. From the current roadmap, the ultimate minimum pitch of the metal layer in EUV lithography is 14 nm, which will be realized by double patterning with high NA EUV tool. After some studies, we believe that the optimum pitch for the line/space is believed to be around 28 nm and 38 ~ 40 nm for the contact holes and vias with 0.55 NA EUV lithography. We have done a simulation study for some typical patterns with the anchoring metal pitch of 28 nm in high NA EUV lithography with self-developed program. Generally speaking, critical structures in advanced logic technologies nodes are Tip-to- Tip structures, the minimum area structures, etc. For these patterns, we have briefly studied the influence of Source Optimization (SO) on and the impact from coma Y to the process window and we have found that the contribution of SO is not significant (<5%) and we have determined the specification on the optical aberration based on our understanding in the requirement from process window. Due to the high kl nature of EUV lithography, we have also done a study on a 45° local interconnect pattern in a 3 nm CFET SRAM with both low NA and high NA EUV processes.
Process optimization of contact hole patterns via a simulated annealing algorithm in extreme ultraviolet lithography

Rongbo Zhao,Yayi Wei,Hong Xu,Xiangming He

DOI: https://doi.org/10.1364/AO.479619

2023-02-01

Abstract:The critical dimension (CD), roughness, and sensitivity are extremely significant indicators for evaluating the imaging performance of photoresists in extreme ultraviolet lithography. As the CD gradually shrinks, tighter indicator control is required for high fidelity imaging. However, current research primarily focuses on the optimization of one indicator of one-dimensional line patterns, and little attention has been paid to two-dimensional patterns. Here, we report an image quality optimization method of two-dimensional contact holes. This method takes horizontal and vertical contact widths, contact edge roughness, and sensitivity as evaluation indicators, and uses machine learning to establish the corresponding relationship between process parameters and each indicator. Then, the simulated annealing algorithm is applied to search for the optimal process parameters, and finally, a set of process parameters with optimum image quality is obtained. Rigorous imaging results of lithography demonstrate that this method has very high optimization accuracy and can improve the overall performance of the device, dramatically accelerating the development of the lithography process.
Object-based mask synthesis algorithm using inverse lithography technique for 65nm-node technology

Wei Xiong,Jinyu Zhang,Minchun Tsai,Yan, Wang,Zhiping Yu

2008-01-01

Abstract:Inverse Lithography Technology (ILT) is a promising solution to enhance the resolution of the optical system in deep-subwavelength lithography. ILT mathematically determines the mask features that produce the desired on-wafer results for best pattern fidelity. In this work, an object-based ILT method using simulated annealing algorithm is developed to pattern metal layers for the 65nm technology node. Simulation results show that the synthesized masks provide good fidelity with much less mask complexity.
Source and mask optimization for stability of reticle and wafer stages

Hao Shen,Libin Zhang,Dinghai Rui,Ge Liu,Yajuan Su,Yayi Wei,Ming Fang

DOI: https://doi.org/10.1364/oe.535075

IF: 3.8

2024-09-05

Optics Express

Abstract:Hao Shen, Libin Zhang, Dinghai Rui, Ge Liu, Yajuan Su, Yayi Wei, Ming Fang The relative motion of the reticle stage and wafer stage caused by vibration during the scanning exposure process of the lithography ... [Opt. Express 32, 33603-33617 (2024)]

optics
Process optimization for performance improvement in Mo/Si multilayers for EUV mask blanks

Katrina Rook,Paul Turner,Narasimhan Srinivasan,Tania Henry,Kenji Yamamoto,Meng Lee

DOI: https://doi.org/10.1117/12.2573164

2020-10-15

Abstract:We investigate the impact of key ion-beam-deposition (IBD) process conditions on the properties of Mo/Si multilayers as reflective coatings for Extreme Ultraviolet (EUV) mask blanks. Dark-field TEM measurements imply interfacial roughness values of 80-90 picometers. Bright-field TEM measurements indicate intermixed layer thicknesses of 0.5 – 1.9nm. We present reflectivity calculations including these two multilayer imperfections and reveal that roughness at this level has insignificant reflectivity impact. However, this level of intermixing could cause a reflectivity drop of ~ 4%. Ion bombardment simulations provide estimates of the atom energy distribution arriving at the mask blank surface during Mo and Si deposition, and of stopping depths of each atom into the underlying layer. Key parameters to modify the deposition energy, and potentially the intermixing depth, are summarized: beam voltage and deposition pressure. Lower ion beam voltage or higher pressure are both predicted to reduce the intermixing depth by 20-30%. Bright-field TEM measurements of multilayers deposited at various deposition conditions confirm the predictions.
Gradient-Based Source And Mask Optimization In Optical Lithography

Yao Peng,Jinyu Zhang,Yan Wang,Zhiping Yu

DOI: https://doi.org/10.1109/TIP.2011.2131668

IF: 10.6

2011-01-01

IEEE Transactions on Image Processing

Abstract:Source and mask optimization (SMO) has been proposed recently as an effective solution to extend the lifespan of conventional 193 nm lithography, although the process is computationally intensive. In this study, we propose a highly effective and efficient method for source optimization and improve a previous method for mask optimization. An SMO framework is implemented by integrating them. Based on pixel-based source and mask representation, the gradients of the objective function are utilized to guide optimization. In addition to maintain the image fidelity, extra penalties are added into the objective function to increase the depth of focus (DOF) and regularize the source and mask patterns. In our SMO framework, a specially designed mask optimization procedure is performed to enhance the algorithm robustness. Afterward, the source optimization and mask optimization are performed alternatively. Convergence results can be acquired using only two or three iteration cycles. This method is demonstrated using two mask patterns with critical dimensions of 45 nm, including a periodic array of contact holes and a cross gate design. The results show that our method can provide great improvements in both image quality and DOF. The robustness of our method is also verified using different initial conditions.
Pushing Multiple Patterning in Sub-10Nm: Are We Ready?

David Z. Pan,Lars Liebmann,Bei Yu,Xiaoqing Xu,Yibo Lin

DOI: https://doi.org/10.1145/2744769.2747940

2015-01-01

Abstract:Due to elongated delay of extreme ultraviolet lithography (EUVL), the semiconductor industry has been pushing the 193nm immersion lithopgrahy using multiple patterning to print critical features in 22nm/14nm technology nodes and beyond. Multiple patterning lithography (MPL) poses many new challenges to both mask design and IC physical design. The mask layout decomposition problem has been extensively studied, first on double patterning, then on triple or even quadruple patterning. Meanwhile, many studies have shown that it is very important to consider MPL implications at early physical design stages so that the overall design and manufacturing closure can be reached. In this paper, we provide a comprehensive overview on the state-of-the-art research results for MPL, from synergistic mask synthesis to physical design. We will also discuss the open problems as to pushing multiple patterning in sub-10nm.
Rapid prototyping of etch test structures for hard mask development using electron beam lithography

Barbara A. Kazanowska,Aaron M. Dangerfield,Han Wang,Gene Lee,Luisa D. Bozano

DOI: https://doi.org/10.1116/6.0003215

2024-01-01

Abstract:Semiconductor manufacturing depends on the development of new processes, advanced patterning, and novel materials to create smaller and higher performing devices to follow the industry roadmaps for applications for computing and systems (such as smartphones and servers). For dynamic random access memory (DRAM) applications, the biggest efforts are engaged in scaling and shrinking of the nodes, and these then affect the area density, performance, and cost of the DRAM cells. However, while we are reaching a slowdown in dimension-scaling, more innovation is needed to sustain the high aspect ratios required in the capacitor’s architecture—whether it is moving toward 3D architectures or developing new materials to sustain the challenge of scaling. To accelerate the learning, it is essential to screen novel hard mask (HM) materials in a rapid fashion to speed their development. While EUV (extreme ultraviolet—a wavelength of 13.5 nm) lithography requires 300 mm wafers, electron beam lithography (EBL) generates nanoscale patterns in a maskless manner on smaller substrates (from 300 mm wafers to 10 mm2 coupons) mimicking sub-50 nm EUV features. The primary goal of this work is to create a path for rapid screening of HM materials that are still under early phase development and which are prepared in small chamber tools (coupon chambers) and, therefore, not ready for 300 mm process integration. While the features investigated of 44 nm half pitch seem extremely reasonable for e-beam, the requirements and the approaches used to address the needed patterned area, resolution, speed, and uniformity exceed the standard conditions previously reported in the literature. Each aspect will be evaluated in the context of a “dots on the fly,” or DOTF, patterning technique.
Source and Mask Co-Optimization Using A Gradient Based Method in Optical Lithography

Yao Peng,Jinyu Zhang,Yan Wang,Zhiping Yu

DOI: https://doi.org/10.1149/1.3360669

2010-01-01

Abstract:With the technology node entering 45nm and below and the delay of the EUV lithography, the resolution enhancement techniques (RET) has been considered indispensable to extend the life time of conventional 193nm lithography. Traditional RETs, for example, optical proximity correction (OPC), phase-shifting mask (PSM), inverse lithography technique (ILT) and so on, use a fixed source thus limiting the degrees of freedom during the mask pattern optimization. To overcome the restriction, recently, source and mask co-optimization (SMO) has been proposed as a strong contender in RET. However, SMO is very computationally intensive. To mitigate the issue, we adopt a method which has demonstrated in good effectivity and efficiency in illumination source optimization. Based on the gray-level pixel based source representation, the gradient of the cost function is calculated to guide optimization to improve the wafer image fidelity and depth of focus (DOF). Moreover, the similar method has been used in mask optimization to form a complete SMO algorithm. The SMO algorithm is demonstrated using two mask patterns with critical dimension (CD) of 45nm, including a periodic array of contact holes and a tri-bar pattern. Both the results showed high image quality have been achieved using our SMO algorithm.
The method of solving initial structure by Seidel aberration theory for extreme ultraviolet lithography objective

Wei Tan,Donglin Ma

DOI: https://doi.org/10.48550/arXiv.2203.02302

2022-03-04

Abstract:In this paper, a method for solving the initial structure of an off-axis multi-mirror system applied to extreme ultraviolet (EUV) lithography using a paraxial ray-tracing algorithm based on Seidel aberration theory is proposed. By tracing the characteristic rays in the reflection system, the height and paraxial angle on each surface can be obtained, then through the relationship between the Seidel aberration coefficient and these parameters, the initial structure with good aberration performance can be solved. We can obtain different initial structures by adding different initial condition constraints. In this paper, we have solved two different initial structures by assigning different optical powers as different initial structures, and on this basis, we have optimized two off-axis six-mirror systems with numerical aperture (NA) of 0.25. Their wavefront aberration RMS value is about 0.04 wavelength, and the absolute distortion is less than 1.2nm, with good imaging quality. We believe that this method can greatly improve the design efficiency and optimization effect of complex multi-mirror systems.

Optics
The refined EUV mask model

I. A. Makhotkin,M. Wu,V. Soltwisch,F. Scholze,V. Philipsen,I.A. Makhotkin

DOI: https://doi.org/10.48550/arXiv.1912.09075

2019-12-19

Applied Physics

Abstract:A refined model of an extreme ultraviolet (EUV) mask stack consisting of the Mo/Si multilayer coated by a Ru protective layer and a TaBN/TaBO absorber layer was developed to facilitate accurate simulations of EUV mask performance for high-NA EUV photo-lithography (EUVL) imaging. The model is derived by combined analysis of the measured EUV and X-ray reflectivity of a state-of-the-art mask blank. These two sets of measurements were analyzed using a combined free-form analysis procedure that delivers high-resolution X-ray and EUV optical constant depth profiles based on self-adapted sets of sublayers as thin as 0.25nm providing a more accurate description of the reflectivity than obtained from only EUV reflectivity. 'Free-form analysis' means that the shape of the layer-interfaces in the model is determined experimentally and is not given a priori by the structure model. To reduce the numerical effort for EUV imaging simulations a low-resolution model of the multilayer and absorber stack with sublayer thicknesses larger than 2nm, that fits to only the EUV reflectance, was derived from the high-resolution model. Rigorous high-NA EUVL simulations were done to compare the performance of the new model to our previous work.
DIRECT: An Efficient Optimization Scheme for Mask Generation Using Inverse Lithography

Wei Xiong,Min-Chun Tsai,Jinyu Zhang,Zhiping Yu

2007-01-01

Abstract:Resolution Enhancement Technologies (RETs) are widely used to cope with the severe optical effects that are manifests in sub-wavelength lithography. Inverse Litho- graphy Technique (ILT) has recently been proposed as an effective RET for sub-wavelength technology. ILT incre- ases the degree-of-freedom in mask data manipulation, and allows automatic correction to 2D pattern distortion. In this work, a realistic aerial image model with an efficient opti- mization scheme is developed to pattern metal layers for the 65nm technology node. Simulation results show that the optimized masks provide good fidelity in patterning. We called our method DIscrete REtiCle Technique, DIRECT.
Progress in the fabrication of low-defect density mask blanks for extreme ultraviolet lithography

Rajul V. Randive,Andy Ma,Patrick A. Kearney,David Krick,Ira Reiss,Paul B. Mirkarimi,Eberhard Spiller

DOI: https://doi.org/10.1117/1.2198853

2006-04-01

Abstract:Extreme ultraviolet lithography (EUVL) is the leading next-generation lithography (NGL) technology to succeed optical lithography at the 32-nm node and beyond. The technology uses a multilayer-based reflective optical system, and the development of suitable, defect-free mask blanks is the greatest challenge facing the commercialization of EUVL. We describe recent progress toward the development of a commercial tool and process for the production of EUVL mask blanks. Using the resources at Mask Blank Development Center at SEMATECH-North in Albany, New York, we are able to decrease the mean multilayer-coating-added defect density on 6-in. square quartz substrates by almost an order of magnitude, from ∼0.5defects∕cm2to∼0.055defects∕cm2 for particles ⩾80nm in size (polystyrene latex equivalent). We also obtain a “champion” mask blank with an added defect density of only ∼0.005defects∕cm2. This advance is due primarily to a compositional analysis of the particles using focused ion beam and energy dispersive analysis of x-rays (EDX) followed by tool and procedural upgrades based on best engineering practices and judgment. Another important specification for masks blanks is the coating uniformity, and we have simultaneously achieved a centroid wavelength uniformity of 0.4% and a coating-added defect density of 0.06def∕cm2.

engineering, electrical & electronic,materials science, multidisciplinary,nanoscience & nanotechnology,optics
Process Optimization of Line Patterns in Extreme Ultraviolet Lithography Using Machine Learning and a Simulated Annealing Algorithm.

Rongbo Zhao,Ziyu Hu,Xiaolin Wang,Peipei Tao,Yimeng Wang,Tianqi Liu,Yayi Wei,Hong Xu,Xiangming He

DOI: https://doi.org/10.1364/ao.485006

IF: 1.9

2023-01-01

Applied Optics

Abstract:Resolution, line edge/width roughness, and sensitivity (RLS) are critical indicators for evaluating the imaging performance of resists. As the technology node gradually shrinks, stricter indicator control is required for high-resolution imaging. However, current research can improve only part of the RLS indicators of resists for line patterns, and it is difficult to improve the overall imaging performance of resists in extreme ultraviolet lithography. Here, we report a lithographic process optimization system of line patterns, where RLS models are first established by adopting a machine learning method, and then these models are optimized using a simulated annealing algorithm. Finally, the process parameter combination with optimal imaging quality of line patterns can be obtained. This system can control resist RLS indicators, and it exhibits high optimization accuracy, which facilitates the reduction of process optimization time and cost and accelerates the development of the lithography process.

Mask structure optimization for beyond EUV lithography

A Method for Extending Depth of Focus in STED Nanolithography

Linearized EUV mask optimization based on the adjoint method

Mask innovations on the eve of High NA EUV lithography

Mitigating the forbidden pitch of extreme ultraviolet lithography using mask optimization based on genetic algorithm

Compact Ultraviolet Light-Emitting Diode-Based Lithography Illumination System with Tunable Coherent Factor

Maskless photolithography based on ultraviolet micro-LEDs and direct writing method for improving pattern resolution

Process Window, and Process Optimization in Both Low and High Na EUV Processes for Advanced Logic Technologies Nodes

Process optimization of contact hole patterns via a simulated annealing algorithm in extreme ultraviolet lithography

Object-based mask synthesis algorithm using inverse lithography technique for 65nm-node technology

Source and mask optimization for stability of reticle and wafer stages

Process optimization for performance improvement in Mo/Si multilayers for EUV mask blanks

Gradient-Based Source And Mask Optimization In Optical Lithography

Pushing Multiple Patterning in Sub-10Nm: Are We Ready?

Rapid prototyping of etch test structures for hard mask development using electron beam lithography

Source and Mask Co-Optimization Using A Gradient Based Method in Optical Lithography

The method of solving initial structure by Seidel aberration theory for extreme ultraviolet lithography objective

The refined EUV mask model

DIRECT: An Efficient Optimization Scheme for Mask Generation Using Inverse Lithography

Progress in the fabrication of low-defect density mask blanks for extreme ultraviolet lithography

Process Optimization of Line Patterns in Extreme Ultraviolet Lithography Using Machine Learning and a Simulated Annealing Algorithm.