Cefotaxime and ceftriaxone levels in pancreas tissue and pancreatic juice.

I. Pulay,M. Arr,A. Bryskier,L. Flautner,T. Tihanyi,A. Magyar

1989-07-01

Journal of Chemotherapy

Abstract:

What problem does this paper attempt to address?

Process Optimization of Line Patterns in Extreme Ultraviolet Lithography Using Machine Learning and a Simulated Annealing Algorithm

Rongbo Zhao,Ziyu Hu,Xiaolin Wang,Peipei Tao,Yimeng Wang,Tianqi Liu,Yayi Wei,Hong Xu,Xiangming He

DOI: https://doi.org/10.1364/ao.485006

IF: 1.9

2023-01-01

Applied Optics

Abstract:Resolution, line edge/width roughness, and sensitivity (RLS) are critical indicators for evaluating the imaging performance of resists. As the technology node gradually shrinks, stricter indicator control is required for high-resolution imaging. However, current research can improve only part of the RLS indicators of resists for line patterns, and it is difficult to improve the overall imaging performance of resists in extreme ultraviolet lithography. Here, we report a lithographic process optimization system of line patterns, where RLS models are first established by adopting a machine learning method, and then these models are optimized using a simulated annealing algorithm. Finally, the process parameter combination with optimal imaging quality of line patterns can be obtained. This system can control resist RLS indicators, and it exhibits high optimization accuracy, which facilitates the reduction of process optimization time and cost and accelerates the development of the lithography process.
Binary mixtures of disks and elongated particles: Texture and mechanical properties.

É. Azéma,I. Preechawuttipong,F. Radjai

DOI: https://doi.org/10.1103/PHYSREVE.94.042901

IF: 2.707

2016-10-01

Physical Review E

Abstract:We analyze the shear strength and microstructure of binary granular mixtures consisting of disks and elongated particles by varying systematically both the mixture ratio and degree of homogeneity (from homogeneous to fully segregated). The contact dynamics method is used for numerical simulations with rigid particles interacting by frictional contacts. A counterintuitive finding of this work is that the shear strength, packing fraction, and, at the microscopic scale, the fabric, force, and friction anisotropies of the contact network are all nearly independent of the degree of homogeneity. In other words, homogeneous mixtures have the same strength properties as segregated packings of the two particle shapes. In contrast, the shear strength increases with the proportion of elongated particles correlatively with the increase of the corresponding force and fabric anisotropies. By a detailed analysis of the contact network topology, we show that various contact types contribute differently to force transmission and friction mobilization.
Optimizing Sub-resolution Assist Features Using Test Pattern Method

Kun Luo

2012-01-01

Abstract:In the field of sub-wavelength lithography,the rule-based sub-resolution assist features insertion is an important technology.Regardless of optical proximity correction effect,the conventional method needs experience to better SRAF.A new optimizing SRAF method using test patterns is presented.Combined with conventional optical proximity correction flow,it can solve problems such as small process window and SRAF print-out.Edge placement error(EPE) and process window are measured and tested on the standard benchmark circuits.The EPE has decreased 10%,while all EPEs under different process windows have also bettered.
Design And Simulation Of Double Annular Illumination Mode For Micro-Lithography

Qiang Song,Jing Zhu,Baoxi Yang,Lei Liu,Jun Wang,Huijie Huang

DOI: https://doi.org/10.1117/12.2031650

2013-01-01

Abstract:Methods of generating various illumination patterns remain as an attractive and important micro-optics research area for the development of resolution enhancement in advanced lithography system. In the current illumination system of lithography machine, off-axis illumination is widely used as an effective approach to enhance the resolution and increase the depth of focus (DOF). This paper proposes a novel illumination mode generation unit, which transform conventional mode to double annular shaped radial polarized (DARP) mode for improving the resolution of micro-lithography. Through LightTools (TM) software simulation, double annular shaped mode is obtained from the proposed generation unit. The mathematical expressions of the radius variation of inner and outer rings are deduced. The impacts of conventional and dual concentric annular illumination pattern on critical dimension uniformity were simulated on an isolated line, square hole and corner. Lithography performance was compared between DARP illumination mode and corresponding single annular modes under critical dimension of 45nm. As a result, DARP illumination mode can improve the uniformity of aerial image at 45nm node through pitch varied in 300-500 nm to a certain extent.
Machine learning in electron beam lithography to boost photoresist formulation design for high-resolution patterning

Rongbo Zhao,Xiaolin Wang,Hong Xu,Yayi Wei,Xiangming He

DOI: https://doi.org/10.1039/d3nr04819e

IF: 6.7

2024-01-01

Nanoscale

Abstract:A high-precision photoresist imaging model and formulation optimizer for electron beam lithography are developed. The optimized photoresist formulation meets the preset imaging performance requirement, boosting photoresist material design.

materials science, multidisciplinary,physics, applied,nanoscience & nanotechnology,chemistry
Process Window, and Process Optimization in Both Low and High Na EUV Processes for Advanced Logic Technologies Nodes

Yanli Li,Qiang Wu,Xianhe Liu,Xiaona Zhu,Shaofeng Yu

DOI: https://doi.org/10.1109/cstic55103.2022.9856929

2022-01-01

Abstract:As we know, if we consider Extreme Ultra-Violet (EUV) stochastics induced defectivity, the minimum pitch for the line/space is around 36~ 40 nm and 48 ~ 50 nm for the contact holes and vias in 0.33 NA EUV lithography. From the current roadmap, the ultimate minimum pitch of the metal layer in EUV lithography is 14 nm, which will be realized by double patterning with high NA EUV tool. After some studies, we believe that the optimum pitch for the line/space is believed to be around 28 nm and 38 ~ 40 nm for the contact holes and vias with 0.55 NA EUV lithography. We have done a simulation study for some typical patterns with the anchoring metal pitch of 28 nm in high NA EUV lithography with self-developed program. Generally speaking, critical structures in advanced logic technologies nodes are Tip-to- Tip structures, the minimum area structures, etc. For these patterns, we have briefly studied the influence of Source Optimization (SO) on and the impact from coma Y to the process window and we have found that the contribution of SO is not significant (<5%) and we have determined the specification on the optical aberration based on our understanding in the requirement from process window. Due to the high kl nature of EUV lithography, we have also done a study on a 45° local interconnect pattern in a 3 nm CFET SRAM with both low NA and high NA EUV processes.
New Modeling and Optimization Method Suitable for UDSM Lithography Simulation

Shen Shanhu,Shi Zheng,Xie Chunlei,Yan Xiaolang

2007-01-01

Chinese Journal of Semiconductors

Abstract:This paper presents a novel UDSM lithography process modeling flow using layout contours.The flow mainly includes the following steps:First the transmission cross coefficient matrix standing for the pure optical lithography model is transformed into a much smaller one by circular sampling,while the mask is represented by the same sampling basis;then the resulting system is calibrated half-empirically with the results of a rigorous 3D simulation of the target design layout or the SEM contours.During the model calibration process,novel genetic algorithms are introduced.The experimental results show that the method takes into account new aberration effects,which cannot be simulated well by the traditional method in the UDSM nodes.Due to the fact that the final model is represented using a series of convolution kernels,the constructed model is able to satisfy the speed and accuracy demands of optical proximity correction tasks.
Fast Level-Set-Based Inverse Lithography Algorithm for Process Robustness Improvement and Its Application

Zhen Geng,Zheng Shi,Xiao-Lang Yan,Kai-Sheng Luo,Wei-Wei Pan

DOI: https://doi.org/10.1007/s11390-015-1549-7

2015-01-01

Abstract:Inverse lithography technology (ILT) is one of the promising resolution enhancement techniques (RETs), as the advanced integrated circuits (IC) technology nodes still use the 193 nm light source. Among all the algorithms for ILT, the level-set-based ILT (LSB-ILT) is a feasible choice with good production result in practice. However, existing ILT algorithms optimize masks at nominal process condition without giving sufficient attention to the process variations, and thus the optimized masks show poor performance with focus and dose variations. In this paper, we put forward a new LSB-ILT algorithm for process robustness improvement with fast convergence. In order to account for the process variations in the optimization, we adopt a new form of the cost function by adding the objective function of process variation band (PV band) to the nominal cost. We also adopt the hybrid conjugate gradient (CG) method to reduce the runtime of the algorithm. We perform experiments on ICCAD 2013 benchmarks and the results show that our algorithm outperforms the top two winners of the ICCAD 2013 contest by 6.5%. We also adopt the attenuated phase shift mask (att-PSM) in the experiment with test cases from industry. The results show that our new algorithm has a fast convergence speed and reduces the process manufacturability index (PMI) by 38.77% compared with the LSB-ILT algorithm without the consideration of PV band.
High Performance Source Optimization Using A Gradient-Based Method in Optical Lithography

Yao Peng,Jinyu Zhang,Yan Wang,Zhiping Yu

DOI: https://doi.org/10.1109/isqed.2010.5450390

2010-01-01

Abstract:Recently, source and mask optimization (SMO) has been proposed as an effective solution to help extending the life time of conventional 193nm lithography. However, SMO is very computationally intensive. To mitigate this issue, we propose a highly effective and efficient method for source optimization in this paper. Based on the gray-level pixel based source representation, the gradient of the cost function is calculated to guide optimization to improve the wafer image fidelity and depth of focus (DOF). This method is demonstrated using two mask patterns with critical dimension of 45nm, including a periodic array of contact holes and an asymmetric mask pattern from an SRAM layout. Comparing with two recently proposed methods, our method can provide greater improvements in image quality and over 10X running speed enhancement. The robustness of our method is verified using several different initial source patterns. Results show that similar final optimized source patterns and image quality have been achieved.
Tatian polynomial-based annular pupil wavefront optimization method for high-NA extreme ultraviolet lithography

Miao Yuan,Zhaoxuan Li,Zhen Li,Yang he,Weichen Huang,Yanqiu Li

DOI: https://doi.org/10.1364/ao.539416

IF: 1.9

2024-11-01

Applied Optics

Abstract:Miao Yuan, Zhaoxuan Li, Zhen Li, He Yang, Weichen Huang, Yanqiu Li The advanced technology node has an exact error tolerance. The effect of projection objective aberration on imaging cannot be neglected. In ... [Appl. Opt. 63, 8263-8272 (2024)]

optics
Gradient-Based Source And Mask Optimization In Optical Lithography

Yao Peng,Jinyu Zhang,Yan Wang,Zhiping Yu

DOI: https://doi.org/10.1109/TIP.2011.2131668

IF: 10.6

2011-01-01

IEEE Transactions on Image Processing

Abstract:Source and mask optimization (SMO) has been proposed recently as an effective solution to extend the lifespan of conventional 193 nm lithography, although the process is computationally intensive. In this study, we propose a highly effective and efficient method for source optimization and improve a previous method for mask optimization. An SMO framework is implemented by integrating them. Based on pixel-based source and mask representation, the gradients of the objective function are utilized to guide optimization. In addition to maintain the image fidelity, extra penalties are added into the objective function to increase the depth of focus (DOF) and regularize the source and mask patterns. In our SMO framework, a specially designed mask optimization procedure is performed to enhance the algorithm robustness. Afterward, the source optimization and mask optimization are performed alternatively. Convergence results can be acquired using only two or three iteration cycles. This method is demonstrated using two mask patterns with critical dimensions of 45 nm, including a periodic array of contact holes and a cross gate design. The results show that our method can provide great improvements in both image quality and DOF. The robustness of our method is also verified using different initial conditions.
Mitigating the forbidden pitch of extreme ultraviolet lithography using mask optimization based on genetic algorithm

Yayi Wei,Lisong Dong,Taian Fan,Ling Ma,Xu Ma

DOI: https://doi.org/10.1117/1.JMM.21.4.043204

2022-10-01

Journal of Micro/Nanopatterning, Materials, and Metrology

Abstract:Abstract. Background In advanced technology nodes, forbidden pitches (FPs) can reduce the depth of focus and limit the overlapped process window of lithography. In extreme ultraviolet (EUV) lithography, one pattern in a different orientation or different position of arc slit field will have a different shadowing effect, due to the chief ray angle and azimuthal angle of the incident light. Therefore, it is necessary to mitigate the FP effect of EUV lithography. Aim With the purpose of mitigating the phenomenon of FPs in the arc slit exposure field, we propose an optimization method based on a genetic algorithm (GA). Approach The optimization method is derived from the basic flow of the GA. Three mask parameters are selected as the variables, including the mask bias and the width and position of the assist feature. The cost function is designed to evaluate the process window, normalized image log slope, and contrast of different fields in the arc slit. After multiple iterations, an optimal combination of three variables is obtained. Results The simulation results show that the optimized mask structure given by the proposed method in the arc slit exposure field can improve the process window in the horizontal and vertical orientations, respectively. Conclusions The limitation of FPs to the process window is removed using mask optimization based on the GA. The proposed optimization method has the potential to be an effect candidate for FPs mitigation.

Materials Science,Physics,Engineering
Effective Optimization Strategy for Electron Beam Lithography of Molecular Glass Negative Photoresist

Jiaxing Gao,Siliang Zhang,Xuewen Cui,Xue Cong,Xudong Guo,Rui Hu,Shuangqing Wang,Jinping Chen,Yi Li,Guoqiang Yang

DOI: https://doi.org/10.1002/admi.202300194

IF: 5.4

2023-06-17

Advanced Materials Interfaces

Abstract:A "PDN first, PAG second" strategy using a combination of low reactivity PAG and high reactivity PDN, which means PDN decomposition first and PAG decomposition second in the EBL process and ensures high crosslinking density in the exposed region while suppressing the migration of reactive groups to the non‐exposed region, is performed to get high quality patterns. As the crucial dimension (CD) of logic circuits continues to shrink, the photoresist metrics, including resolution, line edge roughness, and sensitivity, are faced with significant challenges. Photoresists are indispensable in the integrated circuit manufacturing industry, and specifically in achieving smaller critical dimensions. In this study, the effects of two categories of photosensitive compounds on lithography performance are explored, through a series of sulfonium salt‐based photoacid generators (PAGs) with diverse reactivity and photodegradable nucleophiles (PDNs) with varying nucleophilicity. The detailed characterization and exposure experiments suggest that the reactive alterations of different PAGs are mostly associated with the amount of phenyl composed of cations in PAGs. The "PDN first, PAG second" strategy, which employs a combination of low reactivity PAG and high reactivity PDN and involves PDN decomposition first and PAG decomposition second in the electron beam lithography process, achieves high sensitivity (100–270 μC cm−2), high resolution (25 nm 1:1 line/space, L/S), and low line edge roughness (LER ≤ 3.3 nm) stripes. This approach outperforms conventional formulations and may provide a potentially effective and useful strategy to improve electron beam photoresists.

materials science, multidisciplinary,chemistry
A highly efficient optimization algorithm for pixel manipulation in inverse lithography technique

Jinyu Zhang,Wei Xiong,Yan Wang,Zhiping Yu,Min-Chun Tsai

DOI: https://doi.org/10.1145/1509456.1509565

2008-01-01

Abstract:An efficient algorithm based on the pixel-based mask representation is proposed for fast synthesis of model-based inverse lithography technology (ILT) to improve the resolution and pattern fidelity in optical lithography. This new algorithm reduces N2 intensity computations to three (3) equivalent intensity computations per iteration, where N2 is the total number of pixels in a mask. This algorithm has been demonstrated using different critical dimensions (CDs) and different mask technologies with incoherence and partial-coherence image models. This algorithm is about 60 times faster and more effective than the current gradient-based algorithm. The final image fidelity has quite a weak dependence on the initial condition. Good fidelity images are achieved when CD is reduced to 45nm.
Development of a Lithography Simulation Tool Set in Various Optical Conditions for Source Mask Optimization

Masaki Kuramochi,Yukihide Kohira,Hiroyoshi Tanabe,Tetsuaki Matsunawa,Chikaaki Kodama

DOI: https://doi.org/10.1109/access.2024.3390936

IF: 3.9

2024-04-30

IEEE Access

Abstract:Resolution Enhancement Techniques (RETs) in optical lithography have become essential for achieving the continuous shrinkage of technology nodes. The primary techniques in RETs include source mask optimization. Generally, lithography simulation, which estimates the image formed on wafers, is utilized in RETs. To optimize the light source and mask, optical conditions such as the light-source shape, numerical aperture, and exposure wavelength need to be adjusted in the lithography simulation. However, there is a shortage of open lithography simulation tools that cover various optical conditions. In academia, the study of source optimization in optical lithography is challenging. In this paper, we present the development of a lithography simulation tool set for source mask optimization. In our lithography simulation tool set, users can set optical conditions such as the light-source shape, mask shape, numerical aperture, and exposure wavelength. One function in our lithography simulation tool set calculates light intensity using the Transmission Cross Coefficient (TCC) model, while another function calculates it using the Sum of Coherent System (SOCS) for the specified optical conditions. In experiments, we verified the accuracy of our lithography simulation tool set and evaluated its execution time.

computer science, information systems,telecommunications,engineering, electrical & electronic
Massive metrology and inspection solution for EUV by area inspection SEM with machine learning technology

Tsuyoshi Kondo,Naoma Ban,Yasushi Ebizuka,Yasutaka Toyoda,Yukari Yamada,Taeko Kashiwa,Hirohito Koike,Hiroyuki Shindo,Anne-Laure Charley,Mohamed Saib,Frieda Van Roey,Peter De Bisschop,Danilo De Simone,Christophe Beral,Gian F. Lorusso

DOI: https://doi.org/10.1117/12.2583691

2021-02-22

Abstract:As the development of Extreme Ultraviolet Lithography (EUVL) is progressing toward the sub-10nm generation, the process window becomes very tight. In this situation, local Critical Dimension (CD) variability including stochastic defect directly affects the yield loss, and it is very important to inspect/measure all patterning area of interest on chip for the process verification. In this paper, by combining Area Inspection SEM (AI-SEM) with large Field Of View (FOV) and Die-to-Database-base (D2DB) technologies, we show a comprehensive solution for fast inspection and precise massive CD measurement of EUV characterized features, such as After Development Inspection (ADI) hole pattern, and aperiodic 2D Logic pattern. Also, a big data analysis consisting of multiple CD indices output by AI-SEM, a new process window by multivariable analysis is discussed. Furthermore, Machine Learning (ML) -based inspection and metrology to maximize imaging speed, is also reported.
Research on the Filling Process of Ultraviolet Nanoimprint Lithography with High-Resolution Stamps

Hongwen Sun,Heyu Liu,Xiajuan Shen,Lijun Gu,Jingsheng Wang,Ziyi Ma,Dongyang Xie

DOI: https://doi.org/10.1166/jno.2023.3483

2023-07-01

Journal of Nanoelectronics and Optoelectronics

Abstract:With the rapid development of the semiconductor industry, the feature size of integrated circuits (ICs) is continuously getting smaller and smaller. Although traditional optical lithography and extreme ultraviolet (EUV) lithography can fabricate products with 5-nm feature size, the production cost is quite high. As a candidate of next-generation lithography, ultraviolet nanoimprint lithography (UV-NIL) can also achieve high-resolution imprints at a lower cost. Based on contact mechanics, the filling mechanism and imprint quality of UV-NIL were examined using high-resolution stamps with different feature sizes of 3 nm, 4 nm, and 5 nm. It was found that UV-NIL could successfully replicate patterns with feature sizes down to 3 nm; however, the imprinting process was more complicated. Among the selected nine stamps, the replications of 4-nm and 5-nm feature sizes had a relatively uniform residual layer and a symmetric contact pressure, whereas the replications of 3-nm feature size had an asymmetric contact pressure, resulting in an asymmetric residual layer. In order to obtain a more uniform residual layer with higher-quality imprinting, the pressure applied to the left and right sides of a stamp should be appropriately changed. The pattern density of a stamp had a certain influence on the contact pressure. As the pattern density increased, the contact pressure tended to be uniform; however, when the pattern density exceeded 0.5, the situation became worse. This research can provide guidance for promoting the development of UV-NIL in the direction of high-resolution pattern replication.

engineering, electrical & electronic,nanoscience & nanotechnology,physics, applied
An Optimization Strategy for 65 nm Node Photomasks

Xiong Wei,Zhang Jinyu,Wang Yan,Yu Zhiping,Minchun Tsai

2008-01-01

Journal of Computer-Aided Design & Computer Graphics

Abstract:We introduced a quasi-gradient concept in simulated annealing(SA) algorithm to improve the optimization process for photomask generation.The proposed approach decreases the number of null searches in SA algorithm by firstly searching in the critical-zone indicated by the 'quasi-gradient',and is more efficient than the old method,with yet higher quality.Experimental results show that this algorithm is of good accuracy and fast speed.
DMD maskless lithography optimization based on an improved genetic algorithm

Shengzhou Huang,Yuanzhuo Tang,Bowen Ren,Dongjie Wu,Jiani Pan,Zhaowei Tian,Chengwei Jiang,Zhi Li,Jinjin Huang

DOI: https://doi.org/10.35848/1347-4065/ad3282

IF: 1.5

2024-04-09

Japanese Journal of Applied Physics

Abstract:In this paper, we propose an effective method for optimizing mask design using an enhanced genetic algorithm (GA), significantly boosting digital micromirror device (DMD) maskless lithography performance. After a thorough evaluation of various optimization techniques, we determined that the simulated annealing-enhanced GA (SA-GA) offers superior improvements in lithography simulations, thus optimizing mask design more effectively. Our findings reveal that this method achieves up to 88% and 75% enhancement in simulation accuracy for circular and heart-shaped patterns, respectively, surpassing the results of conventional Hopkins lithography simulations. The remarkable effect of improved GA in enhancing the quality of DMD digital lithography shows that it will have great potential in micro-fabrication applications, and paves the way for the realization of high-fidelity and efficient DMD digital lithography technology, which has excellent versatility and adaptability in the field of microelectronics manufacturing.

physics, applied
Optimization of Spatial Dose Distribution for Controlling Sidewall Shape in Electron-beam Lithography

Pengcheng Li

DOI: https://doi.org/10.48550/arXiv.1509.04694

2015-09-08

Abstract:Electron-beam (e-beam) lithography is widely employed in fabrication of 2-D patterns and 3-D structures. A certain type or shape of the sidewall in the remaining resist profile may be desired in an application, e.g., an undercut for lift-off and a vertical sidewall for etching, or required for a device. Also, as the feature size is decreased well below a micron, a small variation of the sidewall slope can lead to a significant (relative) CD error in certain layers of resist. Therefore, it is important to understand effects of spatial dose distribution on sidewall shape and be able to achieve the desired shape. In this study, via simulation, the relationship among the total dose, spatial distribution of dose, developing time and sidewall shape, and performance of the method developed to optimize the dose distribution for a target sidewall shape have been analyzed. The simulation results have been verified through experiments.

Materials Science

Cefotaxime and ceftriaxone levels in pancreas tissue and pancreatic juice.

Process Optimization of Line Patterns in Extreme Ultraviolet Lithography Using Machine Learning and a Simulated Annealing Algorithm

Binary mixtures of disks and elongated particles: Texture and mechanical properties.

Optimizing Sub-resolution Assist Features Using Test Pattern Method

Design And Simulation Of Double Annular Illumination Mode For Micro-Lithography

Machine learning in electron beam lithography to boost photoresist formulation design for high-resolution patterning

Process Window, and Process Optimization in Both Low and High Na EUV Processes for Advanced Logic Technologies Nodes

New Modeling and Optimization Method Suitable for UDSM Lithography Simulation

Fast Level-Set-Based Inverse Lithography Algorithm for Process Robustness Improvement and Its Application

High Performance Source Optimization Using A Gradient-Based Method in Optical Lithography

Tatian polynomial-based annular pupil wavefront optimization method for high-NA extreme ultraviolet lithography

Gradient-Based Source And Mask Optimization In Optical Lithography

Mitigating the forbidden pitch of extreme ultraviolet lithography using mask optimization based on genetic algorithm

Effective Optimization Strategy for Electron Beam Lithography of Molecular Glass Negative Photoresist

A highly efficient optimization algorithm for pixel manipulation in inverse lithography technique

Development of a Lithography Simulation Tool Set in Various Optical Conditions for Source Mask Optimization

Massive metrology and inspection solution for EUV by area inspection SEM with machine learning technology

Research on the Filling Process of Ultraviolet Nanoimprint Lithography with High-Resolution Stamps

An Optimization Strategy for 65 nm Node Photomasks

DMD maskless lithography optimization based on an improved genetic algorithm

Optimization of Spatial Dose Distribution for Controlling Sidewall Shape in Electron-beam Lithography