Linearized EUV mask optimization based on the adjoint method

Pinxuan He,Jiamin Liu,Honggang Gu,Hao Jiang,Shiyuan Liu

DOI: https://doi.org/10.1364/oe.517783

IF: 3.8

2024-02-24

Optics Express

Abstract:Pinxuan He, Jiamin Liu, Honggang Gu, Hao Jiang, Shiyuan Liu Mask optimization, a compensation method for the thick mask effect and the optical proximity effect in projection lithography, is essential ... [Opt. Express 32, 8415-8424 (2024)]

optics

What problem does this paper attempt to address?

Optimization of Wavefront Coding Systems Based on the Use of Multitarget Optimization

Vannhu Le,Cuifang Kuang,Liu Xu

DOI: https://doi.org/10.1117/1.oe.56.9.093102

IF: 1.3

2017-01-01

Optical Engineering

Abstract:The random selection of phase mask parameters will cause the degradation of imaging quality, which can be fixed through the optimization process. We introduce an evaluation function based on the use of multitarget optimization to obtain optimal phase mask parameters. The proposed method gives the optimal phase mask parameters, which produce together an imaging quality at all defocus positions as best as possible. The cubic phase mask and the general cubic phase mask are both used to perform optimization with a proposed evaluation function. The simulation result gives quite interesting values for the two types of these phase masks. (C) 2017 Society of Photo-Optical Instrumentation Engineers (SPIE)
Mask structure optimization for beyond EUV lithography

Ziqi Li,Lisong Dong,Xu Ma,Yayi Wei

DOI: https://doi.org/10.1364/ol.523596

IF: 3.6

2024-06-19

Optics Letters

Abstract:Ziqi Li, Lisong Dong, Ma Xu, Yayi Wei Beyond extreme ultraviolet (BEUV) lithography with a 6?×?nm wavelength is regarded as a future technique to continue the pattern ... [Opt. Lett. 49, 3604-3607 (2024)]

optics
Optimization of Longitudinal Alignment of an 4<i>f</i> System in a Compact Vectorial Optical-Field Generator Based on a High-Resolution Liquid Crystal Spatial Light Modulator

Mingyu Li,Yuanzheng Liu

DOI: https://doi.org/10.3390/photonics10080894

IF: 2.536

2023-01-01

Photonics

Abstract:Vectorial optical fields have garnered significant attention due to their potential applications in areas such as optical nano-fabrication, optical micromachining, quantum information processing, optical imaging, and so on. Traditional compact vectorial optical generators with amplitude modulation perform poorly in terms of diffraction effect reduction. To tackle this problem, the refractive 4f system in amplitude modulation is longitudinally aligned using an optimization approach presented in this research. The phase images used for longitudinal alignment are loaded into the liquid crystal spatial light modulator (SLM), and the distance between the lens and the mirror in the reflective 4f system is adjusted for longitudinal alignment by compensating for the neglected phase in the integrated module for the compact vectorial optical-field generator. The spot images collected by the CCD are processed using the improved eight-direction Sobel operator and Roberts function, and the longitudinal alignment in the reflective 4f system is determined by the sharpness of the image. The sharpness of the edges of the lines and the overall image are both enhanced after optimization compared to before optimization. The results demonstrate that the proposed method can effectively reduce the longitudinal alignment error of the reflective 4f system in the amplitude modulation of the compact vectorial optical-field generator, lessen the diffraction effect, and improve the performance of the system.
Source and Mask Co-Optimization Using A Gradient Based Method in Optical Lithography

Yao Peng,Jinyu Zhang,Yan Wang,Zhiping Yu

DOI: https://doi.org/10.1149/1.3360669

2010-01-01

Abstract:With the technology node entering 45nm and below and the delay of the EUV lithography, the resolution enhancement techniques (RET) has been considered indispensable to extend the life time of conventional 193nm lithography. Traditional RETs, for example, optical proximity correction (OPC), phase-shifting mask (PSM), inverse lithography technique (ILT) and so on, use a fixed source thus limiting the degrees of freedom during the mask pattern optimization. To overcome the restriction, recently, source and mask co-optimization (SMO) has been proposed as a strong contender in RET. However, SMO is very computationally intensive. To mitigate the issue, we adopt a method which has demonstrated in good effectivity and efficiency in illumination source optimization. Based on the gray-level pixel based source representation, the gradient of the cost function is calculated to guide optimization to improve the wafer image fidelity and depth of focus (DOF). Moreover, the similar method has been used in mask optimization to form a complete SMO algorithm. The SMO algorithm is demonstrated using two mask patterns with critical dimension (CD) of 45nm, including a periodic array of contact holes and a tri-bar pattern. Both the results showed high image quality have been achieved using our SMO algorithm.
Mitigating the forbidden pitch of extreme ultraviolet lithography using mask optimization based on genetic algorithm

Yayi Wei,Lisong Dong,Taian Fan,Ling Ma,Xu Ma

DOI: https://doi.org/10.1117/1.JMM.21.4.043204

2022-10-01

Journal of Micro/Nanopatterning, Materials, and Metrology

Abstract:Abstract. Background In advanced technology nodes, forbidden pitches (FPs) can reduce the depth of focus and limit the overlapped process window of lithography. In extreme ultraviolet (EUV) lithography, one pattern in a different orientation or different position of arc slit field will have a different shadowing effect, due to the chief ray angle and azimuthal angle of the incident light. Therefore, it is necessary to mitigate the FP effect of EUV lithography. Aim With the purpose of mitigating the phenomenon of FPs in the arc slit exposure field, we propose an optimization method based on a genetic algorithm (GA). Approach The optimization method is derived from the basic flow of the GA. Three mask parameters are selected as the variables, including the mask bias and the width and position of the assist feature. The cost function is designed to evaluate the process window, normalized image log slope, and contrast of different fields in the arc slit. After multiple iterations, an optimal combination of three variables is obtained. Results The simulation results show that the optimized mask structure given by the proposed method in the arc slit exposure field can improve the process window in the horizontal and vertical orientations, respectively. Conclusions The limitation of FPs to the process window is removed using mask optimization based on the GA. The proposed optimization method has the potential to be an effect candidate for FPs mitigation.

Materials Science,Physics,Engineering
Gradient-Based Source And Mask Optimization In Optical Lithography

Yao Peng,Jinyu Zhang,Yan Wang,Zhiping Yu

DOI: https://doi.org/10.1109/TIP.2011.2131668

IF: 10.6

2011-01-01

IEEE Transactions on Image Processing

Abstract:Source and mask optimization (SMO) has been proposed recently as an effective solution to extend the lifespan of conventional 193 nm lithography, although the process is computationally intensive. In this study, we propose a highly effective and efficient method for source optimization and improve a previous method for mask optimization. An SMO framework is implemented by integrating them. Based on pixel-based source and mask representation, the gradients of the objective function are utilized to guide optimization. In addition to maintain the image fidelity, extra penalties are added into the objective function to increase the depth of focus (DOF) and regularize the source and mask patterns. In our SMO framework, a specially designed mask optimization procedure is performed to enhance the algorithm robustness. Afterward, the source optimization and mask optimization are performed alternatively. Convergence results can be acquired using only two or three iteration cycles. This method is demonstrated using two mask patterns with critical dimensions of 45 nm, including a periodic array of contact holes and a cross gate design. The results show that our method can provide great improvements in both image quality and DOF. The robustness of our method is also verified using different initial conditions.
A highly efficient optimization algorithm for pixel manipulation in inverse lithography technique

Jinyu Zhang,Wei Xiong,Yan Wang,Zhiping Yu,Min-Chun Tsai

DOI: https://doi.org/10.1145/1509456.1509565

2008-01-01

Abstract:An efficient algorithm based on the pixel-based mask representation is proposed for fast synthesis of model-based inverse lithography technology (ILT) to improve the resolution and pattern fidelity in optical lithography. This new algorithm reduces N2 intensity computations to three (3) equivalent intensity computations per iteration, where N2 is the total number of pixels in a mask. This algorithm has been demonstrated using different critical dimensions (CDs) and different mask technologies with incoherence and partial-coherence image models. This algorithm is about 60 times faster and more effective than the current gradient-based algorithm. The final image fidelity has quite a weak dependence on the initial condition. Good fidelity images are achieved when CD is reduced to 45nm.
Edge-based near-field photolithography optical proximity effect correction technique

Jiaxin Ji,Bin Wei,Guangjuan Wen,Zhongwen Lin

DOI: https://doi.org/10.1007/s11082-024-07765-x

IF: 3

2024-11-04

Optical and Quantum Electronics

Abstract:Near-field photolithography can use surface plasmon polaritons to surpass the traditional optical diffraction limit, thus removing the limitation imposed by the light source wavelength on traditional photolithography resolution. However, the optical proximity effect causes uneven patterns produced by near-field photolithography, resulting in significant deviations from the target pattern. This work employs edge-based near-field photolithography optical proximity effect correction technology to optimize mask patterns to resolve the issue of imaging distortion in near-field photolithography. Firstly, a near-field photolithography exposure model is established in Ansys-FDTD software, and based on this model, the optical proximity effect is analyzed using transfer matrix theory and distribution of electric field energy. Secondly, the designed mask pattern is fed into the exposure model to obtain the exposed pattern outline. Therefore, an edge-based compensation rule is proposed to optimize the pattern based on the trend of contour errors. Finally, the mask with the optimized pattern is prepared using near-field imaging photolithography for comparison experiments. According to the experimental results, the optimized mask improves the similarity of photolithography patterns by 34.7% and reduces the average corner error rate by 61.7%. Thus, the optimized imaging mask significantly reduces distortion in photolithography patterns.

engineering, electrical & electronic,optics,quantum science & technology
A highly effective and efficient cost-function-reduction method for inverse lithography technique

Jinyu Zhang,Wei Xiong,Yan, Wang,Zhiping Yu,Minchun Tsai

DOI: https://doi.org/10.1109/SISPAD.2008.4648286

2008-01-01

Abstract:An efficient algorithm based on the pixel-based mask representation is proposed for fast synthesis of model-based inverse lithography technology (ILT) to improve the resolution and pattern fidelity in optical lithography. This new algorithm uses perturbation method to reduce N-2 intensity computations to only three (3) equivalent intensity computations, where N2 is the total number of pixels in a mask. This algorithm has been demonstrated using different critical dimensions (CDs) and different mask technologies with incoherence and partial-coherence image systems. Good fidelity images are achieved when CD is reduced to 45nm.
Tatian polynomial-based annular pupil wavefront optimization method for high-NA extreme ultraviolet lithography

Miao Yuan,Zhaoxuan Li,Zhen Li,Yang he,Weichen Huang,Yanqiu Li

DOI: https://doi.org/10.1364/ao.539416

IF: 1.9

2024-11-01

Applied Optics

Abstract:Miao Yuan, Zhaoxuan Li, Zhen Li, He Yang, Weichen Huang, Yanqiu Li The advanced technology node has an exact error tolerance. The effect of projection objective aberration on imaging cannot be neglected. In ... [Appl. Opt. 63, 8263-8272 (2024)]

optics
ILT Approach for Compensating 3-D Mask Effects

Xiong Wei,Zhang Jinyu,Min-Chun Tsai,Wang Yan,Yu Zhiping

DOI: https://doi.org/10.1016/s1007-0214(09)70009-4

2009-01-01

Abstract:As mask features scale to smaller dimensions, the so-called “3-D mask effects” which have mostly been neglected before, become important. This paper properly models the 3-D thick mask effects, and then analyses the object-based inverse lithography technique using a simulated annealing algorithm to determine the mask shapes that produce the desired on-wafer results. Evaluations against rigorous simulations show that the synthesized masks provide good image fidelity up to 0.94, and this approach gives improved accuracy and faster results than existing methods.
Fast Level-Set-Based Inverse Lithography Algorithm for Process Robustness Improvement and Its Application

Zhen Geng,Zheng Shi,Xiao-Lang Yan,Kai-Sheng Luo,Wei-Wei Pan

DOI: https://doi.org/10.1007/s11390-015-1549-7

2015-01-01

Abstract:Inverse lithography technology (ILT) is one of the promising resolution enhancement techniques (RETs), as the advanced integrated circuits (IC) technology nodes still use the 193 nm light source. Among all the algorithms for ILT, the level-set-based ILT (LSB-ILT) is a feasible choice with good production result in practice. However, existing ILT algorithms optimize masks at nominal process condition without giving sufficient attention to the process variations, and thus the optimized masks show poor performance with focus and dose variations. In this paper, we put forward a new LSB-ILT algorithm for process robustness improvement with fast convergence. In order to account for the process variations in the optimization, we adopt a new form of the cost function by adding the objective function of process variation band (PV band) to the nominal cost. We also adopt the hybrid conjugate gradient (CG) method to reduce the runtime of the algorithm. We perform experiments on ICCAD 2013 benchmarks and the results show that our algorithm outperforms the top two winners of the ICCAD 2013 contest by 6.5%. We also adopt the attenuated phase shift mask (att-PSM) in the experiment with test cases from industry. The results show that our new algorithm has a fast convergence speed and reduces the process manufacturability index (PMI) by 38.77% compared with the LSB-ILT algorithm without the consideration of PV band.
DIRECT: An Efficient Optimization Scheme for Mask Generation Using Inverse Lithography

Wei Xiong,Min-Chun Tsai,Jinyu Zhang,Zhiping Yu

2007-01-01

Abstract:Resolution Enhancement Technologies (RETs) are widely used to cope with the severe optical effects that are manifests in sub-wavelength lithography. Inverse Litho- graphy Technique (ILT) has recently been proposed as an effective RET for sub-wavelength technology. ILT incre- ases the degree-of-freedom in mask data manipulation, and allows automatic correction to 2D pattern distortion. In this work, a realistic aerial image model with an efficient opti- mization scheme is developed to pattern metal layers for the 65nm technology node. Simulation results show that the optimized masks provide good fidelity in patterning. We called our method DIscrete REtiCle Technique, DIRECT.
High Performance Source Optimization Using A Gradient-Based Method in Optical Lithography

Yao Peng,Jinyu Zhang,Yan Wang,Zhiping Yu

DOI: https://doi.org/10.1109/isqed.2010.5450390

2010-01-01

Abstract:Recently, source and mask optimization (SMO) has been proposed as an effective solution to help extending the life time of conventional 193nm lithography. However, SMO is very computationally intensive. To mitigate this issue, we propose a highly effective and efficient method for source optimization in this paper. Based on the gray-level pixel based source representation, the gradient of the cost function is calculated to guide optimization to improve the wafer image fidelity and depth of focus (DOF). This method is demonstrated using two mask patterns with critical dimension of 45nm, including a periodic array of contact holes and an asymmetric mask pattern from an SRAM layout. Comparing with two recently proposed methods, our method can provide greater improvements in image quality and over 10X running speed enhancement. The robustness of our method is verified using several different initial source patterns. Results show that similar final optimized source patterns and image quality have been achieved.
Block-based mask optimization for optical lithography

Xu Ma,Zhiyang Song,Yanqiu Li,Gonzalo R Arce

DOI: https://doi.org/10.1364/AO.52.003351

2013-05-10

Abstract:Pixel-based optical proximity correction (PBOPC) methods have been developed as a leading-edge resolution enhancement technique (RET) for integrated circuit fabrication. PBOPC independently modulates each pixel on the reticle, which tremendously increases the mask's complexity and, at the same time, deteriorates its manufacturability. Most current PBOPC algorithms recur to regularization methods or a mask manufacturing rule check (MRC) to improve the mask manufacturability. Typically, these approaches either fail to satisfy manufacturing constraints on the practical product line, or lead to suboptimal mask patterns that may degrade the lithographic performance. This paper develops a block-based optical proximity correction (BBOPC) algorithm to pursue the optimal masks with manufacturability compliance, where the mask is shaped by a set of overlapped basis blocks rather than pixels. BBOPC optimization is formulated based on a vector imaging model, which is adequate for both dry lithography with lower numerical aperture (NA), and immersion lithography with hyper-NA. The BBOPC algorithm successively optimizes the main features (MF) and subresolution assist features (SRAF) based on a modified conjugate gradient method. It is effective at smoothing any unmanufacturable jogs along edges. A weight matrix is introduced in the cost function to preserve the edge fidelity of the printed images. Simulations show that the BBOPC algorithm can improve lithographic imaging performance while maintaining mask manufacturing constraints.
Optical proximity correction of hot-spot patterns with subwavelength size in DMD maskless projection lithography

Xu Guo,Jing-Tao Chen,Yuan-Yuan Zhao,Shun-Cheng Cai,Xuan-Ming Duan

DOI: https://doi.org/10.1364/ol.516507

IF: 3.6

2024-02-03

Optics Letters

Abstract:Xu Guo, Jing-Tao Chen, Yuan-Yuan Zhao, Shun-Cheng Cai, Xuan-Ming Duan When the critical dimension (CD) of resist patterns nears the resolution limit of the digital micromirror device (DMD) maskless projection ... [Opt. Lett. 49, 810-813 (2024)]

optics
Process optimization of contact hole patterns via a simulated annealing algorithm in extreme ultraviolet lithography

Rongbo Zhao,Yayi Wei,Hong Xu,Xiangming He

DOI: https://doi.org/10.1364/AO.479619

2023-02-01

Abstract:The critical dimension (CD), roughness, and sensitivity are extremely significant indicators for evaluating the imaging performance of photoresists in extreme ultraviolet lithography. As the CD gradually shrinks, tighter indicator control is required for high fidelity imaging. However, current research primarily focuses on the optimization of one indicator of one-dimensional line patterns, and little attention has been paid to two-dimensional patterns. Here, we report an image quality optimization method of two-dimensional contact holes. This method takes horizontal and vertical contact widths, contact edge roughness, and sensitivity as evaluation indicators, and uses machine learning to establish the corresponding relationship between process parameters and each indicator. Then, the simulated annealing algorithm is applied to search for the optimal process parameters, and finally, a set of process parameters with optimum image quality is obtained. Rigorous imaging results of lithography demonstrate that this method has very high optimization accuracy and can improve the overall performance of the device, dramatically accelerating the development of the lithography process.
Source and mask optimization for stability of reticle and wafer stages

Hao Shen,Libin Zhang,Dinghai Rui,Ge Liu,Yajuan Su,Yayi Wei,Ming Fang

DOI: https://doi.org/10.1364/oe.535075

IF: 3.8

2024-09-05

Optics Express

Abstract:Hao Shen, Libin Zhang, Dinghai Rui, Ge Liu, Yajuan Su, Yayi Wei, Ming Fang The relative motion of the reticle stage and wafer stage caused by vibration during the scanning exposure process of the lithography ... [Opt. Express 32, 33603-33617 (2024)]

optics
Compact Ultraviolet Light-Emitting Diode-Based Lithography Illumination System with Tunable Coherent Factor

Jianghui Liu,Song Hu,Qiang Li

DOI: https://doi.org/10.1117/1.oe.62.4.045103

IF: 1.3

2023-01-01

Optical Engineering

Abstract:Abstract. Optimization of the illumination system of an ultraviolet light-emitting diode (UVLED)-based lithography system by reducing the system complexity and spatial volume has been a research focus. This work proposes a compact lithography illumination system that applies a specially designed embedded compound parabolic concentrator (ECPC) to replace the traditional collimation module and the zoom lenses module. The ECPC, comprised of two detachable parabolic surfaces, precisely collimates all light beams from the UVLED to a preset divergence angle of 6 deg and provides an adjustable lithography coherent factor. The final illumination system offers a square illumination field with a uniformity of up to 1.3% in the large coherent factor and a linearly adjustable numerical aperture in the range of 0.02 ∼ 0.04. The final exposure result of 0.7 μm based on the experiment setup further verifies the performance of the designed illumination system.
Regularized Level-Set-based Inverse Lithography Algorithm for IC Mask Synthesis

Zhen Geng,Zheng Shi,Xiao-lang Yan,Kai-sheng Luo

DOI: https://doi.org/10.1631/jzus.c1300050

2013-01-01

Abstract:Inverse lithography technology (ILT) is one of the promising resolution enhancement techniques, as the advanced IC technology nodes still use the 193 nm light source. In ILT, optical proximity correction (OPC) is treated as an inverse imaging problem to find the optimal solution using a set of mathematical approaches. Among all the algorithms for ILT, the level-set-based ILT (LSB-ILT) is a feasible choice with good production in practice. However, the manufacturability of the optimized mask is one of the critical issues in ILT; that is, the topology of its result is usually too complicated to manufacture. We put forward a new algorithm with high pattern fidelity called regularized LSB-ILT implemented in partially coherent illumination (PCI), which has the advantage of reducing mask complexity by suppressing the isolated irregular holes and protrusions in the edges generated in the optimization process. A new regularization term named the Laplacian term is also proposed in the regularized LSB-ILT optimization process to further reduce mask complexity in contrast with the total variation (TV) term. Experimental results show that the new algorithm with the Laplacian term can reduce the complexity of mask by over 40% compared with the ordinary LSB-ILT.

Linearized EUV mask optimization based on the adjoint method

Optimization of Wavefront Coding Systems Based on the Use of Multitarget Optimization

Mask structure optimization for beyond EUV lithography

Optimization of Longitudinal Alignment of an 4<i>f</i> System in a Compact Vectorial Optical-Field Generator Based on a High-Resolution Liquid Crystal Spatial Light Modulator

Source and Mask Co-Optimization Using A Gradient Based Method in Optical Lithography

Mitigating the forbidden pitch of extreme ultraviolet lithography using mask optimization based on genetic algorithm

Gradient-Based Source And Mask Optimization In Optical Lithography

A highly efficient optimization algorithm for pixel manipulation in inverse lithography technique

Edge-based near-field photolithography optical proximity effect correction technique

A highly effective and efficient cost-function-reduction method for inverse lithography technique

Tatian polynomial-based annular pupil wavefront optimization method for high-NA extreme ultraviolet lithography

ILT Approach for Compensating 3-D Mask Effects

Fast Level-Set-Based Inverse Lithography Algorithm for Process Robustness Improvement and Its Application

DIRECT: An Efficient Optimization Scheme for Mask Generation Using Inverse Lithography

High Performance Source Optimization Using A Gradient-Based Method in Optical Lithography

Block-based mask optimization for optical lithography

Optical proximity correction of hot-spot patterns with subwavelength size in DMD maskless projection lithography

Process optimization of contact hole patterns via a simulated annealing algorithm in extreme ultraviolet lithography

Source and mask optimization for stability of reticle and wafer stages

Compact Ultraviolet Light-Emitting Diode-Based Lithography Illumination System with Tunable Coherent Factor

Regularized Level-Set-based Inverse Lithography Algorithm for IC Mask Synthesis