Abstract:As process technologies advance into deep sub-micrometer and nanometer scale, the charged device model (CDM) is now considered an important stress model for defining electrostatic discharge (ESD) reliability of integrated circuits. Thus the turn-on time of the ESD elements used in the protection circuit becomes important. At this time, there is no good method to evaluate the CDM ESD device turn-on speed. Equipment like VF-TLP and CC-TLP are too complicated and not precise for this purpose. A new method to evaluate the ESD device turn-on speed is presented in this paper. Based on this novel approach, some CDM ESD devices are analyzed based on the transmission line pulsing (TLP) tester. The designed devices include diodes, grounded-gate NMOS, SCRpsilas (silicon controlled rectifier), and Modified-Lateral SCRpsilas (MLSCR). The rising time of the pulse is set at 200 psec to accurately simulate real CDM pulses. The time-dependent voltage and current data are extracted and calculated from each pulse in the Time Domain Reflection (TDR) TLP tester. Two new ESD turn-on conditions are proposed and defined based on the transient currents in order to compare the relative speed of different ESD devices. The results show that the normalized turn-on time of different devices with various sizes and finger numbers do not correlate well with that obtained under the normal DC conditions, and the same device shows different turn-on characteristics under different pulses. These results enable devices to be designed for improved CDM ESD protection levels, and the present method can be used for ESD design for future nanometer technologies.

Experimental Investigation of the ESD Sensitivity of an 8-Bit Microcontroller

Electro-Thermo-Mechanical Investigation On Multi-Level Interconnects In The Presence Of An Esd Pulse

Transient Electrothermal Analysis of Interconnects in the Presence of a ESD pulse

On Chip Electrostatic Discharge Protection for MEMS Gas Sensor System

Investigation of Turn-on Speeds of Electrostatic Discharge Protection Devices Using Transmission-Line Pulsing Technique

Measurement Methodology for Field-Coupled Soft Errors Induced by Electrostatic Discharge

Measurement methodology for establishing an IC ESD sensitivity database

An Investigation on Capacitance-Trigger ESD Protection Devices for High Voltage Integrated Circuits

Evaluation of RF electrostatic discharge (ESD) protection in 0.18-μm CMOS technology

Hardware/firmware co-design in an 8-bits microcontroller to solve the system-level ESD issue on keyboard

A Novel and Powerful TCAD Methodology to Evaluate Performance of ESD Protection Devices

Four-Bit Transient-To-Digital Converter With A Single Rc-Based Detection Circuit For System-Level Esd Protection

Investigation on Bi-directional SCR ESD Protection Devices in a 0.18 μm RF CMOS Process

Analysis of Temperature Effect on Electromagnetic Susceptibility of Microcontroller

FOD Based ESD Protection Devices in Deep Sub-micron Technology

On the ESD Protection and Non-Fatal ESD Strike on Nano CMOS Devices

High-performance Electrostatic Discharge Protection Device for Power Chip Based on 28 Nm Process

Simulation Analysis of Electromagnetic Susceptibility for 32-Bit Digital Signal Controllers

Effects of Non-Fatal Electrostatic Discharge on the Threshold Voltage Degradation in Nano CMOS Devices

Measurement Techniques to Identify Soft Failure Sensitivity to ESD

Investigation of Boundary-Mos-triggered SCR Structures for On-Chip ESD Protection