Employing High-temperature-grown SrZrO$_3$ Buffer to Enhance the Electron Mobility in La:BaSnO$_3$-based Heterostructures

Prosper Ngabonziza,Jisung Park,Wilfried Sigle,Peter A. van Aken,Jochen Mannhart,Darrell G. Schlom

DOI: https://doi.org/10.1063/5.0148467

2023-06-13

Abstract:We report a synthetic route to achieve high electron mobility at room temperature in epitaxial La:BaSnO$_3$/SrZrO$_3$ heterostructures prepared on several oxide substrates. Room-temperature mobilities of 157, 145, and 143 cm$^2$V$^{-1}$s$^{-1}$ are achieved for heterostructures grown on DyScO$_3$ (110), MgO (001), and TbScO$_3$ (110) crystalline substrates, respectively. This is realized by first employing pulsed laser deposition to grow at very high temperature the SrZrO$_3$ buffer layer to reduce dislocation density in the active layer, then followed by the epitaxial growth of an overlaying La:BaSnO$_3$ active layer by molecular-beam epitaxy. Structural properties of these heterostructures are investigated, and the extracted upper limit of threading dislocations is well below $1.0\times 10^{10}$cm$^{-2}$ for buffered films on DyScO$_3$, MgO, and TbScO$_3$ substrates. The present results provide a promising route towards achieving high mobility in buffered La:BaSnO$_3$ films prepared on most, if not all, oxide substrates with large compressive or tensile lattice mismatches to the film.

Materials Science

What problem does this paper attempt to address?

The main problem that this paper attempts to solve is to increase the electron mobility of La:BaSnO₃ thin films at room temperature. Specifically, the authors reduce the defect density by introducing a high - temperature - grown SrZrO₃ buffer layer, thereby enhancing the electron mobility in La:BaSnO₃ - based heterostructures.

### Problem Background

La:BaSnO₃ (lanthanum - doped barium stannate) is a semiconductor material with high transparency and a wide bandgap, exhibiting excellent room - temperature electron mobility (up to 320 cm²V⁻¹s⁻¹). However, in practical applications, due to the lack of substrates lattice - matched with La:BaSnO₃, a large number of structural defects (such as dislocations, stacking faults and point defects) exist in its epitaxial films, which limit the improvement of electron mobility.

### Solution

To solve the above problems, the authors propose a new synthesis route, that is, growing a high - temperature SrZrO₃ buffer layer on different oxide substrates and then epitaxially growing a La:BaSnO₃ active layer on it. The specific steps are as follows:

1. **High - temperature growth of SrZrO₃ buffer layer**: Use pulsed - laser deposition (PLD) technology to grow the SrZrO₃ buffer layer at a high temperature of 1300 °C to reduce the dislocation density.
2. **Epitaxial growth of La:BaSnO₃ active layer**: Use molecular - beam epitaxy (MBE) technology to grow the La:BaSnO₃ active layer on the SrZrO₃ buffer layer.

### Experimental Results

By this method, the authors achieved a significant increase in electron mobility on different substrates (such as DyScO₃(110), MgO(001) and TbScO₃(110)). The specific values are as follows:
- The mobility on the DyScO₃(110) substrate is 157 cm²V⁻¹s⁻¹.
- The mobility on the MgO(001) substrate is 145 cm²V⁻¹s⁻¹.
- The mobility on the TbScO₃(110) substrate is 143 cm²V⁻¹s⁻¹.

In addition, the dislocation density of these films is very low, with an upper limit of less than 1.0×10¹⁰ cm⁻².

### Conclusion

This research provides an effective way to achieve high - mobility La:BaSnO₃ epitaxial films on most oxide substrates, even if there is a large compressive or tensile lattice mismatch between these substrates and La:BaSnO₃. This result is of great significance for solving the problems caused by the lack of commercially available lattice - matched substrates and lays the foundation for the future development of high - performance electronic devices based on La:BaSnO₃.