Abstract:Wide band gap (WBG) alkaline-earth stannate transparent oxide semiconductors (TOSs) have attracted increasing attention in recent years for their high carrier mobility and outstanding optoelectronic properties, and have been applied widely in various devices, such as flat-panel displays. Most alkaline-earth stannates are grown by molecular beam epitaxy (MBE); there are some intractable issues with the tin source including the volatility with SnO and Sn sources and the decomposition of the SnO2 source. In contrast, atomic layer deposition (ALD) serves as an ideal technique for the growth of complex stannate perovskites with precise stoichiometry control and tunable thickness at the atomic scale. Herein, we report the La-SrSnO3/BaTiO3 perovskite heterostructure heterogeneously integrated on Si (001), which uses ALD-grown La-doped SrSnO3 (LSSO) as a channel material and MBE-grown BaTiO3 (BTO) as a dielectric material. The reflective high-energy electron diffraction and X-ray diffraction results indicate the crystallinity of each epitaxial layer with a full width at half maximum (FWHM) of 0.62 degrees. In situ X-ray photoelectron spectroscopy results confirm that there was no Sn-0 state in ALD-deposited LSSO. Besides, we report a strategy for the post-treatment of LSSO/BTO perovskite heterostructures by controlling the oxygen annealing temperature and time, with a maximum oxide capacitance C-ox of 0.31 mu F cm(-2) and a minimum low-frequency dispersion for the devices with 7 h oxygen annealing at 400 degrees C. The enhancement of capacitance properties is primarily attributed to a decrease of oxygen vacancies in the films and interface defects in the heterostructure interfaces during an additional ex situ excess oxygen annealing. This work expands current optimization methods for reducing defects in epitaxial LSSO/BTO perovskite heterostructures and shows that excess oxygen annealing is a powerful tool for enhancing the capacitance properties of LSSO/BTO heterostructures.

Growth and properties of wide-bandgap semiconductor La-doped SrSnO3 film under strain conditions

Strain-induced Ferroelectricity and Lattice Coupling in BaSnO3 and SrSnO3.

Dopant Solubility, and Charge Compensation in La-doped SrSnO3 Films

Solution Processing of Transparent Conducting Epitaxial La:Basno3 Films with Improved Electrical Mobility

Post-annealing optimization of the heteroepitaxial La-doped SrSnO<sub>3</sub> integrated on silicon <i>via</i> ALD

Temperature-dependent thermal conductivity of MBE-grown epitaxial SrSnO3 films

Evolution of electrical and magnetotransport properties with lattice strain in La0.7Sr0.3MnO3 film

High Optical Transmittance and Anomalous Electronic Transport in Flexible Transparent Conducting Oxides Ba0.96La0.04SnO3 Thin Films

Growth and characterization of heteroepitaxial La-substituted BaSnO$_3$ films on SrTiO$_3$ (001) and SmScO$_3$ (110) substrates

One-step epitaxy of high-mobility La-doped BaSnO3 films by high-pressure magnetron sputtering

Strain-enhanced Thermoelectric Properties of Nb-doped SrTiO3 Thin Films

Strain-induced modulation of oxygen vacancies and magnetic properties in La 0.5 Sr 0.5 MnO 3 thin films

Exploring the influence of oxygen vacancy on the transport behavior of Ba1-xLaxSnO3 epitaxial films at different doping regimes

Bandgap tuning, high electrical conductivity, and room-temperature ferromagnetism in La- and V-doped SrSnO 3 epitaxial films

Strain Effects on Conductivity and Charge Transport in La-doped BaTiO3 Thin Films

Phases Competition in Half-Doped La0.5-xDyxCa0.5-ySryMnO 3 Films

Large thickness dependence of the carrier mobility in a transparent oxide semiconductor, La-doped BaSnO3

Oxygen Deficiency Induced Strong Electron Localization In Lanthanum Doped Transparent Perovskite Oxide Basno3

Tuning Electrical Properties and Phase Transitions Through Strain Engineering in Lead-Free Ferroelectric K0.5Na0.5NbO3-LiTaO3-CaZrO3 Thin Films

Epitaxial Growth and Electrical Transport Properties of La0.5Sr0.5Co03 Thin Films Prepared by Pulsed Laser Deposition

Epitaxial strain and thickness dependent structural, electrical and magnetic properties of La0.67Sr0.33MnO3 films