Abstract:Enormous emergent phenomena are discovered from oxide heterointerfaces, due to the reconstruction of charge, lattice and spin degrees of freedom. This work reports a new approach to manipulate the interfacial electronic state of complex oxides through the oxygen ionic evolution, demonstrating a direct correlation between oxygen ionic migration across the interface and interface polyhedral stacking. Such control changes dramatically the magnetic and electronic states of adjacent oxide layer. Complex oxide heterointerfaces and heterostructures have demonstrated enormous emergent phenomena over the last decades, attributed to the reconstructions of mis‐matched crystalline structure, polarity, and spin ordering across the heterointerfaces. This work employs the heterostructures of La0.7Sr0.3MnO3 and CaFeO2.5 as model system to demonstrate an interface‐specific oxygen migration/reconstruction across the interfaces due to the mismatched chemical potential, which dramatically influences the ferromagnetic and electronic states of La0.7Sr0.3MnO3 layer. Specifically, the alternative stacking of octahedral (Oh) and tetrahedral (Td) layers in CaFeO2.5 are used to form two distinct heterointerfaces, namely the Oh‐Td and the Oh‐Oh interfaces with the adjacent La0.7Sr0.3MnO3 layer. Interestingly, the oxygen ion migrates toward opposite directions across the interface for these two cases, in which the CaFeO2.5 layer acts as an "oxygen pump" and manipulates the oxygen contents of its adjacent La0.7Sr0.3MnO3 layers. Such manipulation leads to a dramatically changed ferromagnetic transition temperature for the heterostructure with the Oh‐Td and Oh‐Oh interface. This work establishes a feasible and efficient strategy to control the oxygen ionic distribution through atomic‐scale interface design and opens up new opportunities to exploit emergent states at the complex oxide heterostructures through selective oxygen ion evolution.

Enhancement of electron mobility at oxide interfaces induced by WO3 overlayers

A high-mobility electron gas at the LaAlO3/SrTiO3 heterointerface

Enhancing electron mobility at the LaAlO₃ /SrTiO₃ interface by surface control.

Enhancing Electron Mobility at the LaAlO3/SrTiO3 Interface by Surface Control

Unravelling Oxygen-Vacancy-induced Electron Transfer at SrTiO3-based Heterointerfaces by Transport Measurement During Growth

Charge doping and large lattice expansion in oxygen-deficient heteroepitaxial WO3

Mobility Modulation and Suppression of Defect Formation in Two-Dimensional Electron Systems by Charge-Transfer Management

Tracing the formation of oxygen vacancies at the conductive LaAlO3/SrTiO3 interface via photoemission

Surface Amorphous Oxides Induced Electron Transfer into Complex Oxide Heterointerfaces

Band-Order Anomaly at the γ-Al2O3/SrTiO3 Interface Drives the Electron-Mobility Boost

From LaAlO3/SrTiO3 to LaAlO3/KNbO3: Improving the Transport Properties of Two-Dimensional Electronic Gas in Created +1/+1 Interfaces

Origin of the two-dimensional electron gas at LaAlO3/SrTiO3 interfaces: The role of oxygen vacancies and electronic reconstruction

Ionic Modulation at the LaAlO3/KTaO3 Interface for Extreme High‐Mobility Two‐Dimensional Electron Gas

Defect engineering in oxide heterostructures by enhanced oxygen surface exchange

High-Mobility Two-Dimensional Electron Gases at Oxide Interfaces: Origins and Opportunities

Surface defects and conduction in polar oxide heterostructures

Oxygen Ion Pumping across Atomically Designed Oxide Heterointerfaces

Tracing the Formation of Oxygen Vacancies at the Conductive LaAlO<sub>3</sub>/SrTiO<sub>3</sub> Interface Via Photoemission

Tunable one-dimensional electron gas carrier densities at nanostructured oxide interfaces

Diluted Oxide Interfaces with Tunable Ground States

The Effect of Polar Fluctuation and Lattice Mismatch on Carrier Mobility at Oxide Interfaces