Abstract:Barium stannate (${\mathrm{BaSnO}}_{3}$) is an emerging perovskite oxide with promising properties for many potential applications. One of the most outstanding properties is the high-room-temperature electron mobility. The extraordinary superior electronic transport performance has attracted great attention but the research is limited by semiempirical assumptions. In this work, the first-principles calculations are employed to study the electronic transport of ${\mathrm{BaSnO}}_{3}$ by solving the Boltzmann transport equation (BTE) with full information on electron, phonon, and electron-phonon interactions taken into account. The mode-resolved analyses of scattering rates show that the longitudinal optical (LO) phonons dominate the scattering processes not only at low but also at high carrier concentrations. As a consequence, the energy relaxation time approximation significantly underestimates the solution of BTE due to the divergent coupling coefficient of electrons and LO phonons. The drift and Hall mobilities are calculated in the framework of BTE in the presence of electric and magnetic fields. At low concentration limits, the room-temperature drift and Hall mobilities are 357 and $418\phantom{\rule{4pt}{0ex}}{\mathrm{cm}}^{2}\phantom{\rule{0.16em}{0ex}}{\mathrm{V}}^{\ensuremath{-}1}\phantom{\rule{0.16em}{0ex}}{\mathrm{s}}^{\ensuremath{-}1}$, respectively, while the Hall factor is temperature dependent with values between 1.06 and 1.17 in the temperature range of 100 K to 800 K. In the doping system with carrier concentration above $1\ifmmode\times\else\texttimes\fi{}{10}^{19}\phantom{\rule{4pt}{0ex}}{\mathrm{cm}}^{\ensuremath{-}3}$, the upper limit of drift mobility is $377\phantom{\rule{4pt}{0ex}}{\mathrm{cm}}^{2}\phantom{\rule{0.16em}{0ex}}{\mathrm{V}}^{\ensuremath{-}1}\phantom{\rule{0.16em}{0ex}}{\mathrm{s}}^{\ensuremath{-}1}$ at room temperature, and the Hall factor becomes smaller than 1, which cannot be revealed by the formula under the isotropic parabolic assumption at all, indicating the importance of magnetic transport calculation from ab initio based BTE.

Combined experimental-theoretical study of electron mobility-limiting mechanisms in SrSnO3

Temperature-dependent thermal conductivity of MBE-grown epitaxial SrSnO3 films

Deep-ultraviolet transparent conducting SrSnO 3 via heterostructure design

Deep-ultraviolet transparent conducting SrSnO3 via heterostructure design

Electron mobility of SnO2 from first principles

First-principles analysis of electron transport in BaSnO$_3$

Dopant Solubility, and Charge Compensation in La-doped SrSnO3 Films

Electron and Hole Mobility of SnO2 from Full-Band Electron-Phonon and Ionized Impurity Scattering Computations

Oxide Two‐Dimensional Electron Gas with High Mobility at Room‐Temperature

First-principles Study of the Drift and Hall Mobilities of Perovskite BaSnO3

Structural, Microstructure, Dielectric relaxation and AC conduction studies of perovskite SrSnO3 and Ruddlesden Popper oxide Sr2SnO4

Growth and properties of wide-bandgap semiconductor La-doped SrSnO3 film under strain conditions

Deficiency-Induced Absence of Topological Insulator Behavior in Antiperovskite Dirac Metal Oxide Sr 3-x SnO: A DFT Study

Rewritable High-Mobility Electrons in Oxide Heterostructure of Layered Perovskite/Perovskite

Band-Order Anomaly at the γ-Al2O3/SrTiO3 Interface Drives the Electron-Mobility Boost

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First-principles study of the drift and Hall mobilities of perovskite <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:msub><mml:mi mathvariant="normal">BaSnO</mml:mi><mml:mn>3</mml:mn></mml:msub></mml:math>

Electron-electron Scattering Dominated Electrical and Magnetotransport Properties in the Quasi-Two-dimensional Fermi Liquid Single-Crystal Bi2O2Se

Large thickness dependence of the carrier mobility in a transparent oxide semiconductor, La-doped BaSnO3

Phonon scattering limited mobility in the representative cubic perovskite semiconductors SrGeO$_3$, BaSnO$_3$ and SrTiO$_3$