Single-Crystalline All-Oxide α–γ–β Heterostructures for Deep-Ultraviolet Photodetection
Kuang-Hui Li,Chun Hong Kang,Jung-Hong Min,Nasir Alfaraj,Jian-Wei Liang,Laurentiu Braic,Zaibing Guo,Mohamed Nejib Hedhili,Tien Khee Ng,Boon S. Ooi
DOI: https://doi.org/10.1021/acsami.0c15398
2020-11-17
Abstract:Recent advancements in gallium oxide (Ga<sub>2</sub>O<sub>3</sub>)-based heterostructures have allowed optoelectronic devices to be used extensively in the fields of power electronics and deep-ultraviolet photodetection. While most previous research has involved realizing single-crystalline Ga<sub>2</sub>O<sub>3</sub> layers on native substrates for high conductivity and visible-light transparency, presented and investigated herein is a single-crystalline β-Ga<sub>2</sub>O<sub>3</sub> layer grown on an α-Al<sub>2</sub>O<sub>3</sub> substrate through an interfacial γ-In<sub>2</sub>O<sub>3</sub> layer. The single-crystalline transparent conductive oxide layer made of wafer-scalable γ-In<sub>2</sub>O<sub>3</sub> provides high carrier transport, visible-light transparency, and antioxidation properties that are critical for realizing vertically oriented heterostructures for transparent oxide photonic platforms. Physical characterization based on X-ray diffraction and high-resolution transmission electron microscopy imaging confirms the single-crystalline nature of the grown films and the crystallographic orientation relationships among the monoclinic β-Ga<sub>2</sub>O<sub>3</sub>, cubic γ-In<sub>2</sub>O<sub>3</sub>, and trigonal α-Al<sub>2</sub>O<sub>3</sub>, while the elemental composition and sharp interfaces across the heterostructure are confirmed by Rutherford backscattering spectrometry. Furthermore, the energy-band offsets are determined by X-ray photoelectron spectroscopy at the β-Ga<sub>2</sub>O<sub>3</sub>/γ-In<sub>2</sub>O<sub>3</sub> interface, elucidating a type-II heterojunction with conduction- and valence-band offsets of 0.16 and 1.38 eV, respectively. Based on the single-crystalline β-Ga<sub>2</sub>O<sub>3</sub>/γ-In<sub>2</sub>O<sub>3</sub>/α-Al<sub>2</sub>O<sub>3</sub> all-oxide heterostructure, a vertically oriented DUV photodetector is fabricated that exhibits a high photoresponsivity of 94.3 A/W, an external quantum efficiency of 4.6 × 10<sup>4</sup>%, and a specific detectivity of 3.09 × 10<sup>12</sup> Jones at 250 nm. The present demonstration lays a strong foundation for and paves the way to future all-oxide-based transparent photonic platforms.This article has not yet been cited by other publications.
materials science, multidisciplinary,nanoscience & nanotechnology