Abstract:We propose a novel two-dimensional SnS allotrope (monolayer δ-SnS) based on an auxetic δ-phosphorene configuration using first-principles calculations. This monolayer appears to have outstanding stability as revealed by its energetic, kinetic, thermodynamic, and mechanic calculations, and it can withstand temperatures as high as 900 K. Monolayer δ-SnS is a wide direct-bandgap (2.354 eV) semiconductor, and its electron mobility is as high as ∼1.25 × 103 cm2 V–1 s –1, higher than that of monolayer KTlO (∼450 cm2 V–1 s–1) and MoS2 (∼200 cm2 V–1 s–1). Optical absorption spectra, reaching up to the order of ∼105 cm–1, are obviously excellent in the visible-light region, suggesting efficient harvesting of solar radiation. Because of its unique atomic motif, monolayer δ-SnS presents an unusual bidirectional auxetic effect: a high negative in-plane Poisson's ratio (−0.048 and −0.068), which is larger than those for many recently reported two-dimensional auxetic materials, e.g., black phosphorene (−0.027), borophene (−0.04), and monolayer penta-B2N4 (−0.02). The bandgap and band edge can be substantially manipulated under strain to meet the requirement of the water-splitting reaction. Particularly, when pH = 7, suitable band-edge alignments and small overpotentials of the photocatalytic OER (oxygen evolution reaction) and HER (hydrogen evolution reaction) appear, endowing monolayer δ-SnS with great potential as an efficient visible-light-driven bifunctional photocatalyst for water splitting.The Supporting Information is available free of charge at <a class="ext-link" href="/doi/10.1021/acsami.1c03650?goto=supporting-info">https://pubs.acs.org/doi/10.1021/acsami.1c03650</a>.Relative formation energy of monolayer δ-SnS with regard to bulk Sn and S and some other SnxSy polymorphs; radial distribution functions of Sn–S pair from AIMD simulation; total energy and temperature fluctuations during AIMD simulations; strain-dependent band structures of monolayer δ-SnS with the in-plane uniaxial x-direction strains; strain-dependent band structures of monolayer δ-SnS with the in-plane uniaxial y-direction strains; strain-dependent band structures of monolayer δ-SnS with the in-plane biaxial xy-direction strains; minimum values of the difference between direct and indirect bandgaps under uniaxial and biaxial strains; in-plane Poisson's ratio (ν) of several star monolayers; calculated stress–strain relationships of monolayer δ-SnS under x-direction strain (εx), y-direction strain (εy), and xy-direction strain (εxy); optimized supercell structure consisting of 3 × 3 × 1 unit cells of primitive monolayer δ-SnS and possible sites (I ≈ VI) for O, OH, and OOH adsorption on monolayer δ-SnS; schematic of the 4e process of OER that proceeded on monolayer δ-SnS; and computed zero-point energy (EZPE), entropy (TS), and corrections (ΔGcorr (eV)) of various intermediates (IMs) adsorbed on monolayer δ-SnS (<a class="ext-link" href="/doi/suppl/10.1021/acsami.1c03650/suppl_file/am1c03650_si_001.pdf">PDF</a>)This article has not yet been cited by other publications.

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