[Fertility in patients with ectopic testis treated by orchiopexy at the age of 11 years at the latest].

P. Franch,N. S. Heilskov,H. Høstrup,P. Linnet-Jepsen,H. Søgaard

1978-07-17

Abstract:

What problem does this paper attempt to address?

Two-dimensional monolayer BiSnO 3 : A novel wide-band-gap semiconductor with high stability and strong ultraviolet absorption

Hongbo Wu,Weizhen Meng,Chunhui Zhu,Zhixue Tian,Fengxian Ma,Yalong Jiao

DOI: https://doi.org/10.1088/1361-648x/ad3da5

2024-04-12

Journal of Physics Condensed Matter

Abstract:The exploration of two-dimensional wide-band-gap semiconductors (WBGSs) holds significant scientific and technological importance in the field of condensed matter physics and is actively being pursued in optoelectronic research. In this study, we present the discovery of a novel WBGS, namely monolayer BiSnO 3 , using first-principles calculations in conjunction with the quasi-particle G0W0 approximation. Our calculations confirm that monolayer BiSnO 3 exhibits moderate cleavage energy, positive phonon modes, mechanical resilience, and high temperature resistance (up to 1000 K), which demonstrate its structural stability, flexibility, and potential for experimental realization. Furthermore, band-structure calculations reveal that monolayer BiSnO 3 is a typical WBGS material with a band-gap energy (Eg) of 3.61 eV and possesses a unique quasi-direct electronic feature due to its quasi-flat valence band. The highest occupied valence flat-band originates from the electronic hybridization between Bi-6p and O-2p states, which are in close proximity to the Fermi level. Remarkably, monolayer BiSnO3 exhibits a high absorption capacity for ultraviolet (UV) light spanning the UVA to UVC regions, displaying optical isotropy absorption and an unusual excitonic effect. These intriguing structural and electronic properties establish monolayer BiSnO 3 as a promising candidate for the development of new multi-function-integrated electronic and optoelectronic devices in the emerging field of two-dimensional WBGSs.

physics, condensed matter
Deep-ultraviolet transparent conducting SrSnO 3 via heterostructure design

Fengdeng Liu,Zhifei Yang,David Abramovitch,Silu Guo,K. Andre Mkhoyan,Marco Bernardi,Bharat Jalan

DOI: https://doi.org/10.1126/sciadv.adq7892

IF: 13.6

2024-11-02

Science Advances

Abstract:Exploration and advancements in ultrawide bandgap (UWBG) semiconductors are pivotal for next-generation high-power electronics and deep-ultraviolet (DUV) optoelectronics. Here, we used a thin heterostructure design to facilitate high conductivity due to the low electron mass and relatively weak electron-phonon coupling, while the atomically thin films ensured high transparency. We used a heterostructure comprising SrSnO 3 /La:SrSnO 3 /GdScO 3 (110), and applied electrostatic gating, which allow us to effectively separate charge carriers in SrSnO 3 from dopants and achieve phonon-limited transport behavior in strain-stabilized tetragonal SrSnO 3 . This led to a modulation of carrier density from 10 18 to 10 20 cm −3 , with room temperature mobilities ranging from 40 to 140 cm 2 V −1 s −1 . The phonon-limited mobility, calculated from first principles, closely matched experimental results, suggesting that room temperature mobility could be further increased with higher electron density. In addition, the sample exhibited 85% optical transparency at a 300-nm wavelength. These findings highlight the potential of heterostructure design for transparent UWBG semiconductor applications, especially in DUV regime.

multidisciplinary sciences
Deep-ultraviolet transparent conducting SrSnO3 via heterostructure design

Fengdeng Liu,Zhifei Yang,David Abramovitch,Silu Guo,K. Andre Mkhoyan,Marco Bernardi,Bharat Jalan

2024-05-15

Abstract:Exploration and advancements in ultra-wide bandgap (UWBG) semiconductors are pivotal for next-generation high-power electronics and deep-ultraviolet (DUV) optoelectronics. A critical challenge lies in finding a semiconductor that is highly transparent to DUV wavelengths yet conductive with high mobility at room temperature. Here, we achieved both high transparency and high conductivity by employing a thin heterostructure design. The heterostructure facilitated high conductivity by screening phonons using free carriers, while the atomically thin films ensured high transparency. We utilized a heterostructure comprising SrSnO3/La:SrSnO3/GdScO3 (110) and applied electrostatic gating to effectively separate electrons from their dopant atoms. This led to a modulation of carrier density from 1018 cm-3 to 1020 cm-3, with room temperature mobilities ranging from 40 to 140 cm2V-1s-1. The phonon-limited mobility, calculated from first principles, closely matched experimental results, suggesting that room-temperature mobility could be further increased with higher electron density. Additionally, the sample exhibited 85% optical transparency at a 300 nm wavelength. These findings highlight the potential of heterostructure design for transparent UWBG semiconductor applications, especially in deep-ultraviolet regime.

Materials Science
B 2 S 3 monolayer: a two-dimensional direct-gap semiconductor with tunable band-gap and high carrier mobility

Yungeng Zhang,Yaxuan Wu,Chao Jin,Fengzhu Ren,Bing Wang

DOI: https://doi.org/10.1088/1361-6528/ac1d07

IF: 3.5

2021-09-02

Nanotechnology

Abstract:Atomically two-dimensional materials with direct band-gap and high carrier mobility are highly desirable due to their promising applications in electronic devices. Here, on the basis of ab initio calculations and global particle-swarm optimization method, we predict the B2S3 monolayer as a new semiconductor with favorable functional properties. The B2S3 monolayer possesses a high electron mobility of 553 cm2 V−1 s−1 and a direct band-gap of 1.85 eV. The direct band-gap can be manipulated under biaxial strain. Furthermore, B2S3 monolayer can absorb sunlight efficiently in the entire range of the visible light spectrum. Besides, this monolayer holds good dynamical, thermal, and mechanical stabilities. All the desired properties render B2S3 monolayer a promising candidate for future applications in high-speed (opto)electronic devices.

materials science, multidisciplinary,physics, applied,nanoscience & nanotechnology
Thickness-modulated Electronic Band Structures and Exciton Behavior of Non-Van-der-waals 2D Bi2O2Se Films

Hong Zhou,Xudan Zhu,Weiming Liu,Shuang Liu,Yifan Ding,Qingchun Zhang,Zhiping Zhang,Rongjun Zhang

DOI: https://doi.org/10.1016/j.apsusc.2024.160851

IF: 6.7

2024-01-01

Applied Surface Science

Abstract:Bi2O2Se, as a non-van-der-waals (non-vdW) interlayer coupling two-dimensional material, its electronic band structures and exciton behavior still merit further in-depth studies, especially in the consideration of thickness tuning degrees of freedom. Here, we reveal the broadband excitonic performance and critical point properties of Bi2O2Se films with different thicknesses (3.54–16.33 nm). Five critical points are determined and assigned to specific optical transitions. Moreover, we observe that electronic bandstructures in the Γ valley are stable with variable thicknesses, while the deeper electron levels received more pronounced thickness modulation. And we first report four excitons in wide spectral range (1.24–6.20 eV) through absorption coefficient fitting. Significantly, due to the strong localization of electrons and holes induced by the intralayer built-in electric field, the exciton binding energy (Eb) value of 3.54 nm-Bi2O2Se (234 meV at Γ position) is apparently larger than typical multi-layer TMDCs, which offering unprecedented opportunities in applications in optoelectronic devices. Furthermore, Eb of two excitons at low energy region (Eb1, Eb2) red-shift with increasing thickness, while Eb of higher-energy excitons (Eb3, Eb4) blue-shift, owing to the dispersion characteristic of the effect dielectric screening effects. Our results are vital to wide-ranging applications of Bi2O2Se from fundamental science to optoelectronic devices.
Bi2OS2: a Direct-Gap Two-Dimensional Semiconductor with High Carrier Mobility and Surface Electron States

Xiwen Zhang,Bing Wang,Xianghong Niu,Yunhai Li,Yunfei Chen,Jinlan Wang

DOI: https://doi.org/10.1039/c8mh01001c

IF: 13.3

2018-01-01

Materials Horizons

Abstract:Bi2OS2 nanosheets possess tunable anomalous layer-dependent bandgaps, derived from the synergetic effect of the quantum confinement and surface electron states.
Theoretical insights into the defect performance of the wide bandgap semiconductor BaS.

G. Gao,Yu Chen,S. Fan

DOI: https://doi.org/10.1039/d3cp00240c

2023-04-17

Abstract:Wide bandgap semiconductors materials (WBGSMs) are of great interest for their applications in transparent electronics and power electronics. Recent studies have shown that BaS is a potential transparent conducting material but the knowledge of it is deficient. Herein, we systemically investigate its electronic structure and evaluate the effects of its intrinsic defects and extrinsic dopants by utilizing the hybrid density functional method. The obtained results show that BaS is an indirect bandgap semiconductor with a bandgap of 3.88 eV. Its electron-effective mass is very small (0.33 m0). We find that the intrinsic n-type conductivity of BaS is connected with the shallow donor defect sulfur vacancy (VS). Regarding extrinsic dopants (group IA atoms), we find that Li and Na are favorable n-type dopants, while K and Rb are p-type dopants. Among these impurities, the Li interstitial (Liint) configuration possesses the lowest formation energy of 0.114 eV. Based on thermodynamic simulations, we find that the electron density can reach 2.39 × 1020 cm-3 in Li-doped BaS at room temperature, which is comparable to those of typical WBGSMs In2O3, BaSnO3, and β-Ga2O3. We expect BaS could replace typical WBGSMs in some applications. Moreover, its component elements Ba and S are non-toxic, cheap, and earth-abundant, making it a very competitive candidate for WBGSMs. Based on these results, we deem BaS a promising candidate for optoelectronic applications.

Medicine,Materials Science,Physics
Electronic Structures and Unusually Robust Bandgap in an Ultrahigh-Mobility Layered Oxide Semiconductor, Bi 2 O 2 Se

Cheng Chen,Meixiao Wang,Jinxiong Wu,Huixia Fu,Haifeng Yang,Zhen Tian,Teng Tu,Han Peng,Yan Sun,Xiang Xu,Juan Jiang,Niels B. M. Schroter,Yiwei Li,Ding Pei,Shuai Liu,Sandy A. Ekahana,Hongtao Yuan,Jiamin Xue,Gang Li,Jinfeng Jia,Zhongkai Liu,Binghai Yan,Hailin Peng,Yulin Chen

DOI: https://doi.org/10.1126/sciadv.aat8355

2019-01-01

Abstract:A new layered oxide semiconductor (Bi 2 O 2 Se) is found with excellent electronic properties for promising applications.
Versatile two-dimensional boron monosulfide polymorphs with tunable bandgaps and superconducting properties

Dong Fan,Shaohua Lu,Chengke Chen,Meiyan Jiang,Xiao Li,Xiaojun Hu

DOI: https://doi.org/10.1063/5.0006059

IF: 4

2020-07-06

Applied Physics Letters

Abstract:The typical two-dimensional semiconductors, group IIIA chalcogenides, have garnered tremendous interest for their outstanding electronic, mechanical, and chemical properties. However, so far, there have been rare reports on boron monosulfides (BS) binary material. Here, four two-dimensional BS sheets, namely, the α-, β-, γ-, and δ-BS sheets, are proposed and discussed from first principles calculations. State-of-the-art calculations reveal all these structures are thermally and dynamically stable, indicating the potential for experimental synthesis. Specifically, for α-BS, it has a calculated exfoliation energy of 0.96 J m−2, suggesting that the preparation of α-BS is feasible by the exfoliation of bulk rhombohedral-BS. Our results show that α-, β-, and γ-BS are semiconductors, whereas δ-BS is a metallic system. Remarkably, our calculations indicate that δ-BS is a superconductor with a large electron-phonon coupling (λ <math> ≈</math> 1.51), leading to a high superconducting critical temperature (Tc <math> ≈</math> 21.56 K), which is the interesting property with intrinsic superconducting among all two-dimensional group IIIA chalcogenides. The potential of semiconducting BS monolayers as the gas-sensor or thermoelectric materials is also demonstrated.

physics, applied
Thickness-modulated Electronic Band Structures and Exciton Behavior of Non-Van-der-waals 2D Bi2O2Se 2 O 2 Se Films

Hong Zhou,Xudan Zhu,Weiming Liu,Shuang Liu,Yifan Ding,Qingchun Zhang,Zhiping Zhang,Rongjun Zhang

DOI: https://doi.org/10.1016/j.apsusc.2024.160851

IF: 6.7

2024-01-01

Applied Surface Science

Abstract:Bi2O2Se, 2 O 2 Se, as a non-van-der-waals (non-vdW) interlayer coupling two-dimensional material, its electronic band structures and exciton behavior still merit further in-depth studies, especially in the consideration of thickness tuning degrees of freedom. Here, we reveal the broadband excitonic performance and critical point properties of Bi2O2Se 2 O 2 Se films with different thicknesses (3.54-16.33 nm). Five critical points are determined and assigned to specific optical transitions. Moreover, we observe that electronic bandstructures in the Gamma valley are stable with variable thicknesses, while the deeper electron levels received more pronounced thickness modulation. And we first report four excitons in wide spectral range (1.24-6.20 eV) through absorption coefficient fitting. Significantly, due to the strong localization of electrons and holes induced by the intralayer built-in electric field, the exciton binding energy (Eb) E b ) value of 3.54 nm-Bi2O2Se 2 O 2 Se (234 meV at Gamma position) is apparently larger than typical multi-layer TMDCs, which offering unprecedented opportunities in applications in optoelectronic devices. Furthermore, Eb b of two excitons at low energy region (Eb1, E b 1 , E b 2 ) red-shift with increasing thickness, while Eb b of higher-energy excitons (Eb3, E b 3 , E b 4 ) blue-shift, owing to the dispersion characteristic of the effect dielectric screening effects. Our results are vital to wide-ranging applications of Bi2O2Se 2 O 2 Se from fundamental science to optoelectronic devices.
Density functional theory study of two-dimensional bismuth selenite: layer-dependent electronic, transport and optical properties with spin-orbit coupling.

Yao Wang,Jinsen Zhang,Xuanlin Zhang,Chenqiang Hua,Y. H. Lu,Xinyong Tao

DOI: https://doi.org/10.1039/d4cp03782k

IF: 3.3

2024-12-05

Physical Chemistry Chemical Physics

Abstract:Recently, the atomic-thickness van der Waals (vdW) layered bismuth selenite (Bi 2 SeO 5 ) has been successfully synthesized, not only expanding the family of two-dimensional (2D) materials, but also playing a pivotal role in the advancement of 2D electronics as a high- κ dielectric. In this work, we systematically study the basic properties of 2D Bi 2 SeO 5 through first-principles calculations, focusing on the spin-orbit coupling (SOC) effect and layer-dependent behaviors. The results show that SOC can adjust the bandgap of bulk/2D Bi 2 SeO 5 from direct to indirect, with the bandgap decreasing as thickness increases due to quantum confinement. Importantly, we observe that SOC has a negligible effect on the valence bands edge but significantly impacts the conduction bands edge, due to the specific distribution of the Bi- p orbital. We also explore the vdW magnetic tunneling junction based on 2D Bi 2 SeO 5 , which can exhibit significant tunneling magnetoresistance between the parallel and antiparallel magnetic alignments of the electrodes, e.g. 900% for 1L and 1800% for 2L. As for the optical properties, strong layer dependence is also verified, and the large absorption coefficient is determined to be ~10 6 cm -1 . At last, we also explore the piezoelectric properties. Overall, layered Bi 2 SeO 5 is a potential candidate material for electronic devices and optoelectronic applications, as well as the nano-spintronics.

chemistry, physical,physics, atomic, molecular & chemical
Excellent response to near ultraviolet light and strong intervalley scatterings of electrons in 2D SnS2

Yu Wu,Junbo He,Ying Chen,Mingran Kong,Yiming Zhang,Xiaobing Hu,Jianwei Lian,Hao Zhang,Rong-Jun Zhang

DOI: https://doi.org/10.1039/d2nr00416j

IF: 6.7

2022-01-01

Nanoscale

Abstract:Tin disulfide (SnS2) has attracted much attention as a novel two dimensional material due to its potential applications in electronics and optoelectronics. In this work, we investigated the optical properties of ultra-thin SnS2 film samples (∼8 nm) via spectroscopic ellipsometry, and found that SnS2 maintains a relatively high imaginary part of the dielectric constant (ε2) in the range of 256-377 nm indicating high optical response. The carrier transport properties of SnS2 were investigated considering full mode-resolved electron-phonon couplings, which reveal that the intervalley scatterings between degenerate valley (peaks) states via the fifth optical branch phonons play a dominant role in electron scattering, while ZA phonons dominate the hole scattering. The calculated electron mobility is ∼50 cm2 V-1 s-1 which is close to previously reported experimental results. By considering full el-ph interactions based on the rigid-band approximation, the maximum value of the thermoelectric figure of merit zT reaches 0.43 at 700 K. Our work not only reveals the promising applications of SnS2 in the fields of electronics and optoelectronics, but also showcases the computational framework for precise calculations of thermoelectric performances.
Excellent response to near ultraviolet light and large intervalley scatterings of electrons in 2D SnS2

Yu Wu,Junbo He,Ying Chen,Mingran Kong,Yiming Zhang,Xiaobing Hu,Jianwei Lian,Hao Zhang,Rongjun Zhang

DOI: https://doi.org/10.1039/d2nr00416j

IF: 6.7

2022-01-01

Nanoscale

Abstract:Tin disulfide (SnS2) has attracted much attention as a novel two dimensional material due to its potential applications in electronics and optoelectronics. In this work, we investigated the optical properties of ultra-thin SnS2 film samples (similar to 8 nm) via spectroscopic ellipsometry, and found that SnS2 maintains a relatively high imaginary part of the dielectric constant (epsilon(2)) in the range of 256-377 nm indicating high optical response. The carrier transport properties of SnS2 were investigated considering full mode-resolved electron-phonon couplings, which reveal that the intervalley scatterings between degenerate valley (peaks) states via the fifth optical branch phonons play a dominant role in electron scattering, while ZA phonons dominate the hole scattering. The calculated electron mobility is similar to 50 cm(2) V-1 s(-1) which is close to previously reported experimental results. By considering full el-ph interactions based on the rigid-band approximation, the maximum value of the thermoelectric figure of merit zT reaches 0.43 at 700 K. Our work not only reveals the promising applications of SnS2 in the fields of electronics and optoelectronics, but also showcases the computational framework for precise calculations of thermoelectric performances.
2D XBiSe3(X = As, Sb) monolayers with high anisotropic mobility and enhanced optical absorption in visible light region

Li-Bo Zhan,Chuan-Lu Yang,Mei-Shan Wang,Xiao-Guang Ma

DOI: https://doi.org/10.1016/j.apsusc.2020.147137

IF: 6.7

2020-11-01

Applied Surface Science

Abstract:Configurations and properties of 2D XBiSe3(X = As, Sb) monolayers are predicted by first-principles calculations. Dynamic and thermal stabilities are affirmed by phonon dispersion and ab initio molecular dynamics simulation, respectively. Bandgap and band edges, density of states, optical absorptions, and mobilities are calculated by using the obtained structures. Effects of strain engineering on the band structure and optical absorption are also explored. Results reveal that the AsBiSe3 and SbBiSe3 monolayers have indirect gaps of 1.2 eV (HSE06)/1.43 eV (GW) and 1.1 eV (HSE06)/1.32 eV (GW), respectively. The high electron (approximately 105 cm2V−1s−1) and hole (approximately 104 cm2V−1s−1) mobilities of the XBiSe3 monolayers are observed for zigzag and armchair directions, and obvious anisotropy is observed. The intense optical absorptions in the UV–visible light regions are identified for the two monolayers. Interestingly, the band edge of the AsBiSe3 monolayer can span the redox potential of water under −4% biaxial compressive strain, which implies that this monolayer can be used as a candidate material for photocatalytic water splitting to produce hydrogen. All the results support the assertion that the XBiSe3 monolayers have potential for application in the optoelectronic, photocatalytic, and photovoltaic fields.

chemistry, physical,physics, applied, condensed matter,materials science, coatings & films
Two-dimensional YOBiS2 with Narrow Bandgap and High Carrier Mobility for Infrared Photodetector

Kai Li,Min Zhang,Jun-Jie Shi

DOI: https://doi.org/10.1016/j.physleta.2024.130062

IF: 2.707

2024-01-01

Physics Letters A

Abstract:Two-dimensional (2D) materials are highly valued for their atomic-scale thickness and exceptional mechanical, optical, and electronic properties. However, most 2D materials have band gaps above 1.6 eV, limiting their applications in infrared detection. In this work, we predict a novel 2D semiconductor YOBiS2, using first-principles calculations. Analyses of formation energy, molecular dynamics, phonon dispersion, and mechanical stability confirm its structural and dynamical stability. Remarkably, using the GW approximation taking into account the SOC, 2D YOBiS2 exhibits a direct electronic band gap of 1.38 eV. Calculations incorporating BSE indicate an exciton binding energy of 0.81 eV. Additionally, it has a low hole effective mass of 0.09 m0 and a high hole mobility of 1.66 × 104 cm2·V−1·s−1. 2D YOBiS2 possesses an exceptionally broad optical absorption spectrum, spanning from the near-infrared to the ultraviolet region, with an ultra-high absorption coefficient of 5.5 × 105 cm−1, highlighting its potential for high-performance infrared photodetectors.
In-depth Understanding of the Band Alignment and Interface States Scenario in Bi2O2Se/SrTiO3 Ultrathin Heterojunction

Ke Zhang,Yusen Feng,Lei Hao,Jing Mi,Miao Du,Minghui Xu,Yan Zhao,Jianping Meng,Liang Qiao

2024-08-05

Abstract:Bismuth oxyselenide (Bi2O2Se), a novel quasi-2D charge-carrying semiconductor, is hailed as one of the best emerging platforms for the next generation semiconductor devices. Recent efforts on developing diverse Bi2O2Se heterojunctions have produced extensive potential applications in electronics and optoelectronics. In-depth understanding of the band alignment and especially interface dynamics is, however, still challenging. In this work, a comprehensive experimental investigation on the band alignment is performed by a high-resolution X-ray photoelectron spectrometer (HRXPS), and the properties of interface states are also fully discussed. The results show that the ultrathin film Bi2O2Se grown on SrTiO3 (TiO2 (001) termination) exhibits Type-I (straddling gap) band alignment with a valence band offset (VBO) of about 1.77\pm0.04 eV and conduction band offset (CBO) of about 0.68\pm0.04 eV. However, further considering the contribution of the interface states, the bands on the interface present a herringbone configuration due to sizable build-in electric fields, which is significantly different from the conventional band alignment. In this sense, our results provide an insightful guidance to the development of high-efficiency electronic and optoelectronic devices, specifically of the devices where the charge transfer is highly sensitive to interface states.

Materials Science,Mesoscale and Nanoscale Physics
2D Bi2Se3 materials for optoelectronics

Fakun K. Wang,Sijie J. Yang,Tianyou Y. Zhai

DOI: https://doi.org/10.1016/j.isci.2021.103291

IF: 5.8

2021-11-01

iScience

Abstract:2D layered materials with diverse exciting properties have recently attracted tremendous interest in the scientific community. Layered topological insulator Bi2Se3 comes into the spotlight as an exotic state of quantum matter with insulating bulk states and metallic Dirac-like surface states. Its unique crystal and electronic structure offer attractive features such as broadband optical absorption, thickness-dependent surface bandgap and polarization-sensitive photoresponse, which enable 2D Bi2Se3 to be a promising candidate for optoelectronic applications. Herein, we present a comprehensive summary on the recent advances of 2D Bi2Se3 materials. The structure and inherent properties of Bi2Se3 are firstly described and its preparation approaches (i.e., solution synthesis and van der Waals epitaxy growth) are then introduced. Moreover, the optoelectronic applications of 2D Bi2Se3 materials in visible-infrared detection, terahertz detection, and opto-spintronic device are discussed in detail. Finally, the challenges and prospects in this field are expounded on the basis of current development.

multidisciplinary sciences
Bi2O2Se: A rising star for semiconductor devices

Xiang Ding,Menglu Li,Pei Chen,Yan Zhao,Mei Zhao,Huaqian Leng,Yong Wang,Sharafat Ali,Fazal Raziq,Xiaoqiang Wu,Haiyan Xiao,Xiaotao Zu,Qingyuan Wang,Ajayan Vinu,Jiabao Yi,Liang Qiao

DOI: https://doi.org/10.1016/j.matt.2022.11.005

IF: 18.9

2022-12-01

Matter

Abstract:With weak interlayer interactions and unique physical properties, bismuth oxyselenide (Bi2O2Se) has become a rising star as a novel quasi-2D material, possessing high symmetry, adjustable electronic structure, ultra-high electron mobility, persistent quantum oscillations, unique defects, strong spin-orbital coupling, natural oxide layers, excellent stability, and marvelous optoelectronic performance. These characteristics will help to break through existing technical barriers for applications such as field-effect transistors and photodetectors. Its unique crystal structure and suitable lattice parameters allow it to grow on lattice-matched (SrTiO3 and LaAlO3) and unmatched (mica and SiO2) substrates, establishing a link between traditional epitaxy and emerging van der Waals epitaxy. This review aims to provide an overview of this promising semiconductor from a fundamental structure, physics, and physical properties perspective. We especially pay attention to the correlation of electronic structure to various physical properties and material performance. We also identify current problems and challenges regarding the fundamental properties of this material.

materials science, multidisciplinary
The Tunable Electronic and Optical Properties of Two-Dimensional Bismuth Oxyhalides

Yong Zhou,Beitong Cheng,Shuai Huang,Xingyong Huang,Ruomei Jiang,Xule Wang,Wei Zhang,Baonan Jia,Pengfei Lu,Hai-Zhi Song

DOI: https://doi.org/10.3390/nano13202798

IF: 5.3

2023-10-20

Nanomaterials

Abstract:Two-dimensional (2D) bismuth oxyhalides (BiOX) have attracted much attention as potential optoelectronic materials. To explore their application diversity, we herewith systematically investigate the tunable properties of 2D BiOX using first-principles calculations. Their electronic and optical properties can be modulated by changing the number of monolayers, applying strain, and/or varying the halogen composition. The band gap shrinks monotonically and approaches the bulk value, the optical absorption coefficient increases, and the absorption spectrum redshifts as the layer number of 2D BiOX increases. The carrier transport property can be improved by applying tensile strain, and the ability of photocatalytic hydrogen evolution can be obtained by applying compressive strain. General strain engineering will be effective in linearly tuning the band gap of BiOX in a wide strain range. Strain, together with halogen composition variation, can tune the optical absorption spectrum to be on demand in the range from visible to ultraviolet. This suggests that 2D BiOX materials can potentially serve as tunable novel photodetectors, can be used to improve clean energy techniques, and have potential in the field of flexible optoelectronics.

materials science, multidisciplinary,physics, applied,nanoscience & nanotechnology,chemistry
δ-SnS: An Emerging Bidirectional Auxetic Direct Semiconductor with Desirable Carrier Mobility and High-Performance Catalytic Behavior toward the Water-Splitting Reaction

Qiang Zhang,Xian Wang,Shali Yang

DOI: https://doi.org/10.1021/acsami.1c03650

2021-07-01

Abstract:We propose a novel two-dimensional SnS allotrope (monolayer δ-SnS) based on an auxetic δ-phosphorene configuration using first-principles calculations. This monolayer appears to have outstanding stability as revealed by its energetic, kinetic, thermodynamic, and mechanic calculations, and it can withstand temperatures as high as 900 K. Monolayer δ-SnS is a wide direct-bandgap (2.354 eV) semiconductor, and its electron mobility is as high as ∼1.25 × 103 cm2 V–1 s –1, higher than that of monolayer KTlO (∼450 cm2 V–1 s–1) and MoS2 (∼200 cm2 V–1 s–1). Optical absorption spectra, reaching up to the order of ∼105 cm–1, are obviously excellent in the visible-light region, suggesting efficient harvesting of solar radiation. Because of its unique atomic motif, monolayer δ-SnS presents an unusual bidirectional auxetic effect: a high negative in-plane Poisson's ratio (−0.048 and −0.068), which is larger than those for many recently reported two-dimensional auxetic materials, e.g., black phosphorene (−0.027), borophene (−0.04), and monolayer penta-B2N4 (−0.02). The bandgap and band edge can be substantially manipulated under strain to meet the requirement of the water-splitting reaction. Particularly, when pH = 7, suitable band-edge alignments and small overpotentials of the photocatalytic OER (oxygen evolution reaction) and HER (hydrogen evolution reaction) appear, endowing monolayer δ-SnS with great potential as an efficient visible-light-driven bifunctional photocatalyst for water splitting.The Supporting Information is available free of charge at <a class="ext-link" href="/doi/10.1021/acsami.1c03650?goto=supporting-info">https://pubs.acs.org/doi/10.1021/acsami.1c03650</a>.Relative formation energy of monolayer δ-SnS with regard to bulk Sn and S and some other SnxSy polymorphs; radial distribution functions of Sn–S pair from AIMD simulation; total energy and temperature fluctuations during AIMD simulations; strain-dependent band structures of monolayer δ-SnS with the in-plane uniaxial x-direction strains; strain-dependent band structures of monolayer δ-SnS with the in-plane uniaxial y-direction strains; strain-dependent band structures of monolayer δ-SnS with the in-plane biaxial xy-direction strains; minimum values of the difference between direct and indirect bandgaps under uniaxial and biaxial strains; in-plane Poisson's ratio (ν) of several star monolayers; calculated stress–strain relationships of monolayer δ-SnS under x-direction strain (εx), y-direction strain (εy), and xy-direction strain (εxy); optimized supercell structure consisting of 3 × 3 × 1 unit cells of primitive monolayer δ-SnS and possible sites (I ≈ VI) for O, OH, and OOH adsorption on monolayer δ-SnS; schematic of the 4e process of OER that proceeded on monolayer δ-SnS; and computed zero-point energy (EZPE), entropy (TS), and corrections (ΔGcorr (eV)) of various intermediates (IMs) adsorbed on monolayer δ-SnS (<a class="ext-link" href="/doi/suppl/10.1021/acsami.1c03650/suppl_file/am1c03650_si_001.pdf">PDF</a>)This article has not yet been cited by other publications.

materials science, multidisciplinary,nanoscience & nanotechnology

[Fertility in patients with ectopic testis treated by orchiopexy at the age of 11 years at the latest].

Two-dimensional monolayer BiSnO 3 : A novel wide-band-gap semiconductor with high stability and strong ultraviolet absorption

Deep-ultraviolet transparent conducting SrSnO 3 via heterostructure design

Deep-ultraviolet transparent conducting SrSnO3 via heterostructure design

B 2 S 3 monolayer: a two-dimensional direct-gap semiconductor with tunable band-gap and high carrier mobility

Thickness-modulated Electronic Band Structures and Exciton Behavior of Non-Van-der-waals 2D Bi2O2Se Films

Bi2OS2: a Direct-Gap Two-Dimensional Semiconductor with High Carrier Mobility and Surface Electron States

Theoretical insights into the defect performance of the wide bandgap semiconductor BaS.

Electronic Structures and Unusually Robust Bandgap in an Ultrahigh-Mobility Layered Oxide Semiconductor, Bi 2 O 2 Se

Versatile two-dimensional boron monosulfide polymorphs with tunable bandgaps and superconducting properties

Thickness-modulated Electronic Band Structures and Exciton Behavior of Non-Van-der-waals 2D Bi2O2Se 2 O 2 Se Films

Density functional theory study of two-dimensional bismuth selenite: layer-dependent electronic, transport and optical properties with spin-orbit coupling.

Excellent response to near ultraviolet light and strong intervalley scatterings of electrons in 2D SnS<sub>2</sub>

Excellent response to near ultraviolet light and large intervalley scatterings of electrons in 2D SnS<sub>2</sub>

2D XBiSe3(X = As, Sb) monolayers with high anisotropic mobility and enhanced optical absorption in visible light region

Two-dimensional YOBiS2 with Narrow Bandgap and High Carrier Mobility for Infrared Photodetector

In-depth Understanding of the Band Alignment and Interface States Scenario in Bi2O2Se/SrTiO3 Ultrathin Heterojunction

2D Bi2Se3 materials for optoelectronics

Bi2O2Se: A rising star for semiconductor devices

The Tunable Electronic and Optical Properties of Two-Dimensional Bismuth Oxyhalides

δ-SnS: An Emerging Bidirectional Auxetic Direct Semiconductor with Desirable Carrier Mobility and High-Performance Catalytic Behavior toward the Water-Splitting Reaction