Epitaxial Films and Devices of Transparent Conducting Oxides: La:BaSnO$_3$

Prosper Ngabonziza,Arnaud P. Nono Tchiomo

2024-08-27

Abstract:This paper reviews recent developments in materials science and device physics of high-quality epitaxial films of the transparent perovskite La-doped barium stannate, La:BaSnO$_3$. It presents current efforts in the synthesis science of epitaxial La:BaSnO$_3$ films for achieving reduced defect densities and high electron mobility at room temperature. We discuss the scattering mechanisms and the route towards engineering defect-free epitaxial La:BaSnO$_3$ heterostructures. By combining chemical surface characterization and electronic transport studies, a special emphasis is laid on the proper correlation between the transport properties and the electronic band structure of La:BaSnO$_3$ films and heterostructures. For application purposes, interesting optical properties of La:BaSnO$_3$ films are discussed. Finally, for their potential application in oxide electronics, an overview of current progress in the fabrication of La:BaSnO$_3$-based thin-film field-effect transistors is presented together with recent progress in the the fundamental realization of two-dimensional electron gases with high electron mobility in La:BaSnO$_3$-based heterostructures. Future experimental studies to reveal the potential deployment of La:BaSnO$_3$ films in optoelectronic and transparent electronics are also discussed.

Materials Science

What problem does this paper attempt to address?

The paper primarily aims to address several key issues in the field of transparent conductive oxides (TCO):

1. **Improving Electron Mobility**: The focus of the paper is on enhancing the electron mobility of lanthanum-doped barium stannate (La:BaSnO3) thin films by improving material synthesis techniques. La:BaSnO3, as a potential high-performance transparent conductive material, has high electron mobility at room temperature, which is crucial for achieving high-speed electronic devices.

2. **Reducing Defect Density**: The study explores how to reduce the defect density in La:BaSnO3 thin films by optimizing growth conditions and using suitable substrate materials. These defects mainly include dislocations and stacking faults, which can significantly reduce electron mobility.

3. **Exploring Scattering Mechanisms**: The paper provides a detailed analysis of various scattering mechanisms that affect the electron mobility of La:BaSnO3 thin films and proposes methods to reduce dislocation density to improve electron mobility. In particular, dislocation scattering (DIS) and impurity scattering (IMP) are considered the main factors limiting mobility.

4. **Fabricating Defect-Free Heterostructures**: To further enhance performance, researchers attempt to fabricate defect-free La:BaSnO3 heterostructures for future applications in oxide electronics and optoelectronics.

In summary, this paper aims to enhance the application potential of La:BaSnO3 thin films as next-generation transparent conductive materials by improving material synthesis methods and understanding fundamental physical mechanisms.