Abstract:Antimony (Sb) heavily doped germanium (Ge)-on-silicon (Si) epitaxial films are investigated as mid-infrared (MIR) plasmonic materials. Structural, electrical and optical properties have been improved by proper choice of dopant species (i.e. Sb) and optimization of the growth parameters (i.e. Sb flux and substrate temperature). The increased electron conductivity can be attributed to the elevated carrier concentration (1.5×10 cm) and carrier mobility (224 cmvs) in Sb-doped Ge epilayers. The measured MIR reflectivities of the Sb-doped Ge films show free-carrier-dependent properties, which leads to tunable real and imaginary parts of permittivities. Localized surface plasmon polaritons (SPP) of the bowtie antennas fabricated out of the Sb-doped Ge films are demonstrated. The fabricated antennas can provide signal enhancement for the molecular vibrational spectroscopy when these vibrational lines are spectrally in proximity to the localized plasmon resonance. These CMOS-compatible Sb-doped Ge epilayers offer a platform to study the interaction of MIR plasmon with nanostructures on chips.

Effects of Antimony Deposition on Field-Emission Current Density of Ge/Si

The Antimony-Vacancy Defect in P-Type Germanium

On the Assumed Impact of Germanium Doping on Void Formation in Czochralski-Grown Silicon

Silicon Doping Effect on the Crystallization Behavior of Ge2Sb2Te5 Film

Effects of Germanium on Movement of Dislocations in P-Type Czochralski Silicon

Influence of the Heterojunction on the Field Emission from Tetrahedral Amorphous Carbon on Si

Effect of Antimony Ambience on the Interfacial Misfit Dislocations Array in A Gasb Epilayer Grown on A Gaas Substrate by Mocvd

Germanium Doping of Si Substrates for Improved Device Characteristics and Yield

Influence of Sb as surfactant on Ge epitaxial growth on Si(001)

Electron Beam Evaporation Deposition and Properties of Abrupt GST/Si Heterojunction Structure

Ge Migration Effect of Si/Ge-N/Si(100) Heterostructure Films Probed by Grazing Incidence Fluorescence X-Ray Absorption Fine Structure

Electronic behaviour and field emission of a-C:H:N/Si heterojunctions

CMOS-compatible antimony-doped germanium epilayers for mid-infrared low-loss high-plasma-frequency plasmonics.

Observation of field emission from GeSn nanoparticles epitaxially grown on silicon nanopillar arrays

Effect of predeposited ge on the growth of SiC films on Si(111) by SSMBE

Effect of Sb as a surfactant on the inner diffusion of epilayer Ge atoms into Si substrate

Study of Ge Thin Heterostructures by Synchrotron Radiation X-Ray Reflection

Large and small angle x-ray scattering studies of Si/SiGe superlattices grown by gas-source molecular beam epitaxy

A surface and interface study on the InSb/GaAs heterostructures

Old materials with new properties III: Antimony

Ge/Si Interdiffusion In The Gesi Dots And Wetting Layers