Abstract:Silicon germanium nanostructures (SiGe NSs) have acquired today a prominent role in several cutting-edge research topics in nanoscience, thanks to the most recent advances in synthesis, processing and characterization [1-4]. The physical properties of such nanosystems are strictly related not solely to the size of the system (as in pure Si and Ge NSs), but also to the relative composition of Si and Ge atoms as well as to the geometry of Si/Ge interface. The investigation of these materials with experimental techniques is, however, complicated by several factors not always well controlled which can hide the right comprehension of the fundamental properties. In this context first principles theoretical modeling is extraordinarily important as it can complement or augment experimental observations. Here, I will present an overview of the ab initio computational modeling of various types of SiGe nanosystems (nanowires [5], nanodots [6] and slabs [7-8]). I will outline how by bringing together two similar elements –Si and Ge, neighbors in the periodic table–, a broad variety of new chemical and physical properties emerge, stimulating both fundamental and application-driven research in nanoscience. Indeed, I will show that substituting some of the atoms of a pure Si NS with Ge in configurations of distinct compositions and dimensionalities, can strongly affect some fundamental properties such as band gap, band offsets, work function and impurity doping levels. Bibliography [1] M. Amato, M. Palummo, R. Rurali, S. Ossicini, Chem. Rev. 114, 1371 (2014) [2] I. Berbezier, A. Ronda, Surf. Sci. Rep., 64, 47 (2009) [3] J.-N Aqua, I. Berbezier, L. Favre, T. Frisch, A. Ronda, Phys. Rep., 522, 52 (2013) [4] D. J. Paul, Semicond. Sci. Technol. 19, R75–R108 (2004) [5] M. Amato, S. Ossicini and R. Rurali, Nano Lett. 11, 2, 594-598 (2011) [6] I. Marri, M. Amato, S. Ossicini, S. Grillo, O. Pulci, Interplay of quantum confinement and strain effects in type I to type II transition in Ge/Si core-shell nanocrystals (submitted, 2022) [7] I. Marri, M. Amato, M. Bertocchi, A. Ferretti, D. Varsano, S. Ossicini, Phys. Chem. Chem. Phys. 22, 25593-25605 (2020) [8] S. Pouch, M. Amato, M. Bertocchi, S. Ossicini, N. Chevalier, T. Mélin, J.M. Hartmann, O. Renault, V. Delaye, D. Mariolle, L. Borowik, J. Phys. Chem. C 119, 26776-26782 (2015)

Tight-binding calculations of SiGe alloy nanocrystals in SiO2 matrix

Calculation of Elastic Strain Fields for Single Ge/Si Quantum Dots

Tight-binding calculations of the optical properties of Si nanocrystals in a SiO2 matrix

Sol–gel preparation of Ge nanocrystals embedded in SiO2 glasses

Unfolding Band and Absorption Energy Shift of \(\text{Si-Ge}\) Nano Crystals from First-principles Calculations

Tight-binding Study of the Strained Monolayer Superlattices (si)1/(si1−xgex)1 (100)

Supercell Approach in Tight-Binding Calculation of Si and Ge Nanowire Bandstructures

Structural, electronic and optical properties of tetrahedral $Si_xGe_{47-x}:H_{60}$ nanocrystals: A Density Functional study

Interplay of quantum confinement and strain effects in type I to type II transition in Ge/Si core-shell nanocrystals

Model for the on-site matrix elements of the tight-binding hamiltonian of a strained crystal: Application to silicon, germanium and their alloys

A nonorthogonal tight-binding study of silicon-germanium mixed clusters GemSin(m+n <= 10)

Spin and valley-orbit splittings in SiGe/Si heterostructures

(Invited, Digital Presentation) Physical Properties of Silicon-Germanium Nanostructures: Theory and Simulations

Nonthermal plasma synthesized freestanding silicon–germanium alloy nanocrystals

Solid-State Synthesis of Si1-xGex Nanoalloys with Composition-Tunable Energy Gaps and Visible to Near Infrared Optical Properties

Band structure calculations of Ge-Si core-shell nanowires

Formation Of Ge Nanocrystals Embedded In A Sio2 Matrix: Transmission Electron Microscopy, X-Ray Absorption, And Optical Studies

Theoretical Study of Electronic Structure of Silicon Nanocrystals

Optical Constants and Band Gap Expansion of Size Controlled Silicon Nanocrystals Embedded in SiO2 Matrix

Electronic states and phonon properties of Ge x Si 1−x nanostructures

Confinement Effect of Optical Phonons in Si–Ge Alloy Nanocrystals