Abstract:Silicon photoluminescence and lasing have been issues critical to breaking through bottlenecks in the understanding of luminescence mechanisms. Unfortunately, long-standing disputes about the exciton recombination mechanism and fluorescence lifetime remain unresolved, especially about whether silicon nanocrystals (Si NCs) can realize fast direct band gap-like optical transitions. Here, using ground-state and excited-state density functional theory (DFT), we obtained intrinsic phonon-free optical transitions at sizes from Si22 to Si705, showing that very small Si NCs can realize a strong direct optical transition. Orbital labeling results show that this rapid transition does not come from the T-T-like transition, contrary to the conclusions from the effective mass approximation, and that T-X mixing leads to a quasidirect band gap. This anomalous transition is particularly intense with decreasing size (or enhancement of quantum confinement). By investigating electron and hole distributions generated in the optical transition, localized state induced enhanced emission (LIEE) in Si NCs was proposed. Quantum confinement distorts the excited-state electron spatial distribution by localizing Bloch waves into the NC core, resulting in increased hole and electron overlap, thus inducing a fast optical process. This work resolves important debates and proposes LIEE to explain the anomalous luminescence-a phase transition from weak (or no) luminescent state to strong optical transition, which will aid attempts at realizing high radiative rate NC materials and application-level Si lasers.

Tight-binding calculations of the optical properties of Si nanocrystals in a SiO2 matrix

Size-Dependent Optical Absorption of Silicon Nanocrystals Embedded in Sio2/Si3n4 Hybrid Matrix

Tight-binding calculations of SiGe alloy nanocrystals in SiO2 matrix

Optical Characterisation of Silicon Nanocrystals Embedded in SiO2/Si3N4 Hybrid Matrix for Third Generation Photovoltaics.

Structures and absorption optical spectra of silicon cluster Si 9 via first-principles calculations

Optical properties and their depth profiling of Si nanocrystals embedded in SiO2 matrix

Tight-Binding Calculations Of The Optical Response Of Optimally P-Doped Si Nanocrystals: A Model For Localized Surface Plasmon Resonance

Optical Constants and Band Gap Expansion of Size Controlled Silicon Nanocrystals Embedded in SiO2 Matrix

Temperature Dependent Optical Properties of Si Nanocrystals Embedded in SiO 2 Matrix

Role of local fields in the optical properties of silicon nanocrystals using the tight binding approach

Local-fields and disorder effects in free-standing and embedded Si nanocrystallites

Size dependence of refractive index of Si nanoclusters embedded in SiO2

Profile of Optical Constants of Sio2 Thin Films Containing Si Nanocrystals

Nonlinear Optical Properties of Silicon Nanocrystals Grown by a SiOx/SiO2 Superlattice Approach

Optical to UV spectra and birefringence of SiO$_2$ and TiO$_2$: First-principles calculations with excitonic effects

Optical properties of structurally-relaxed Si/SiO$_2$ superlattices: the role of bonding at interfaces

Electronic Structure and Optical Properties of Silicon Nanocrystals along their Aggregation Stages

Influence of Nanocrystal Size on Dielectric Functions of Si Nanocrystals Embedded in SiO2 Matrix

Optical Properties of Amorphous Si/Sio2 Superlattice

Enhancement of Intrinsic Optical Transitions in Silicon Nanocrystals by State Localization

Structural And Optical Characterization Of Nanocrystals Of The Inas-Inp System Embedded In Amorphous Sio2 Thin Films