Abstract:III-V semiconductor-based photoelectrochemical (PEC) devices show the highest solar-to-electricity or solar-to-fuel conversion efficiencies. GaInP is a relevant top photoabsorber layer or a charge-selective contact in PEC for integrated and direct solar fuel production, due to its tunable lattice constant, electronic band structure, and favorable optical properties. To enhance the stability of its surface against chemical corrosion which leads to decomposition, we deposit a GaN protection and passivation layer. The n-doped GaInP(100) epitaxial layers were grown by metalorganic chemical vapor deposition on top of GaAs(100) substrate. Subsequently, thin 1-20 nm GaN films were grown on top of the oxidized GaInP surfaces by atomic layer deposition. We studied the band alignment of these multi-junction heterostructures by X-ray and ultraviolet photoelectron spectroscopy. Due to the limited emission depth of photoelectrons, we determined the band alignment by a series of separate measurements in which we either modified the GaInP(100) surface termination or the film thickness of the grown GaN on GaInP(100) buffer layers. On n-GaInP(100) surfaces prepared with the well-known phosphorus-rich (2x2)/c(4x2) reconstruction we found up-ward surface band bending (BB) of 0.34 eV, and Fermi level pinning due to the present surface states. Upon oxidation, the surface states are partially passivated resulting in a reduction of BB to 0.12 eV and a valence band offset (VBO) between GaInP and oxide bands of 2.0 eV. Between the GaInP(100) buffer layer and the GaN passivation layer, we identified a VBO of 1.8 eV. The corresponding conduction band offset of -0.2 eV is found to be rather small. Therefore, we evaluate the application of the GaN passivation layer as a promising technological step not only to reduce surface states but also to increase the stability of the surfaces of photoelectrochemical devices.

Formation of a p-n junction on the GaAs-surface by an Ar+ ion beam

P-N Junction Formation in Electron-beam Irradiated Graphene Step

Formation of a lateral p-n junction light-emitting diode on an n-type high-mobility GaAs/Al$_{0.33}$Ga$_{0.67}$As heterostructure

Scanning tunneling microscopy and x-ray photoelectron spectroscopy studies of atomic level structure and Fermi level pinning on GaAs(110) surfaces grown by molecular beam epitaxy

Plasma Deposition of Gallium Arsenide Nanoclusters on a Silicon Matrix

Efficient nanopatterning of Ge surface induced by oblique argon cluster ion beam

Insitu Electron-Spectroscopy Studies Of Interaction Between P And Gaas(100) Surface

Band energy diagrams of n-GaInP/n-AlInP(100) surfaces and heterointerfaces studied by X-ray photoelectron spectroscopy

Photocurrent and Photoconductance Properties of a GaAs Nanowire

Effects of radiation damage on GaN epitaxial layer arising from argon ion implantation for edge termination

Nitridation of GaAs surfaces stimulated by nitrogen glow discharge

Probing Semiconductor Band Structures and Heterojunction Interface Properties with Ballistic Carrier Emission: Gaas/Alxga1-Xas As A Model System

Surface Passivation of III-V GaAs Nanopillars by Low Frequency Plasma Deposition of Silicon Nitride for Active Nanophotonic Devices

Origins of GaN(0 0 0 1) surface reconstructions

Combining advanced photoelectron spectroscopy approaches to analyse deeply buried GaP(As)/Si(100) interfaces: Interfacial chemical states and complete band energy diagrams

Photoemission Study of Chemisorption and Fermi-level Pinning at K/GaAs(1 0 0) Interface with Synchrotron Radiation

p-n Junction revealed by Electrolytic Etching

NITRIDATION OF K/GaAs(100) SURFACES

Photoemission study and band alignment of GaN passivation layers on GaInP heterointerface

Nanostructure phase and interface engineering via controlled Au self-assembly on GaAs(001) surface

Heteroepitaxy of GaN by using an ionized N source