Abstract:We have explored an approach for the fabrication of intrinsic and hysteresis-free graphene field-effect transistors (FETs) and for the construction of graphene p-n junctions based on substrate engineering by hexagonal boron nitride (h-BN)/SiO2. The effect of various interfaces on the performance of the graphene FETs was systematically studied by constructing four types of graphene devices (graphene/SiO2 FETs, graphene/h-BN FETs, h-BN/graphene/SiO2 FETs, and h-BN/graphene/h-BN FETs). Graphene/SiO2 FETs and h-BN/graphene/SiO2 FETs always exhibit large hysteresis before and after annealing, whereas graphene/h-BN FETs and h-BN/graphene/h-BN FETs show intrinsic properties after annealing. Raman measurements also indicate that graphene on a SiO2 substrate contains large amounts of p-doping, whereas that on a h-BN substrate is intrinsic. Thus, the graphene/h-BN interface gives intrinsic and hysteresis-free graphene FETs, whilst the graphene/SiO2 interface affords p-doping and a hysteresis effect in the graphene FETs. This result is because h-BN serves as an insulation layer, which prevents charge trapping between the graphene and the charge traps at the graphene/SiO2 interface, which cause the hysteresis. In addition, the negligible electrostatic doping of h-BN into graphene also ensures the intrinsic and hysteresis-free properties of graphene/BN/SiO2 FETs. Moreover, benefitting from the p-doped and intrinsic features of graphene on SiO2 and h-BN substrates, respectively, large-scale graphene p-n junction superlattices with great potential difference are constructed and integrated into photodetector arrays by substrate engineering with h-BN/SiO2. Efficient hot carrier-assisted photocurrent was generated by laser excitation at the junction under ambient conditions.

P-N Junction Formation in Electron-beam Irradiated Graphene Step

Homo- and Hetero- P-N Junctions Formed on Graphene Steps

A Graphene P–N Junction Induced by Single-Gate Control of Dielectric Structures

Fabrication of Graphene P-N-p Junctions with Contactless Top Gates

Lateral Graphene p–n Junctions Realized by Nanoscale Bipolar Doping Using Surface Electric Dipoles and Self‐Organized Molecular Anions

Lateral graphene p–n junctions formed by the graphene/MoS2 hybrid interface

Lateral Graphene P-N Junctions Formed by the Graphene/mos₂ Hybrid Interface.

Graphene on a metal surface with an h-BN buffer layer: gap opening and N-doping

Modulation-doped Growth of Mosaic Graphene with Single-Crystalline P–n Junctions for Efficient Photocurrent Generation

Reliable Fabrication of Graphene Nanostructure Based on e-Beam Irradiation of PMMA/Copper Composite Structure

Seamless Lateral Graphene P–n Junctions Formed by Selective in Situ Doping for High-Performance Photodetectors

Study of graphene p-n junctions formed by the electrostatic modification of the SiO2 substrate

Realization of Controllable Graphene P–n Junctions Through Gate Dielectric Engineering

Formation of a p-n junction on the GaAs-surface by an Ar+ ion beam

Visualizing In‐Plane Junctions in Nitrogen‐Doped Graphene

Electrical Transport in High Quality Graphene Pnp Junctions

Efficient fabrication of stable graphene-molecule-graphene single-molecule junctions at room temperature.

Substrate engineering by hexagonal boron nitride/SiO2 for hysteresis-free graphene FETs and large-scale graphene p-n junctions.

Photoresponse in Graphene Induced by Defect Engineering

Effect of electron-beam irradiation on graphene field effect devices

Electron-beam Introduction of Heteroatomic Pt-Si Structures in Graphene