Abstract:An inductive coupled plasma treatment method is developed to introduce defects in h‐BN, which further influence the interfacial charge transfer behavior between graphene/h‐BN/WS2 heterostructures. Besides, the photo‐response performance of the heterostructure‐based photodetector, including photocurrent amplitude, light on/off ratio, and self‐driving performance, is highly improved by means of defect engineering. At the interface of 2D heterostructures, the presence of defects and their manipulation play a crucial role in the interfacial charge transfer behavior, further influencing the device functionality and performance. In this study, the impact of deliberately introduced photo‐active defects in the h‐BN layer on the interfacial charge transfer and photoresponse performance of a metal‐insulator‐semiconductor type heterostructure device is explored. The formation and concentration of defects are qualitatively controlled using an inductive coupled plasma treatment method, as evidenced by enhanced h‐BN defect emission and more efficient optically induced doping of graphene at the graphene/h‐BN interface. Besides, the use of the h‐BN layer between graphene and WS2 not only suppresses charge carriers in the dark state, but also promotes the separation of photo‐generated electron‐hole pairs and interfacial charge transfer due to the existence of defect levels, leading to orders of magnitude improvement in the light on/off ratio and self‐driving performance of the heterostructure photodetector. This strategy of controlling defect states in the insulating layer provides a new approach to optimize the charge transfer processes at the 2D interfaces, so as to expand its potential applications in the fields of electronic and optoelectronic devices.

Photoresponse in Graphene Induced by Defect Engineering

Competing Mechanisms for Photocurrent Induced at the Monolayer-Multilayer Graphene Junction.

Optically Active Defect Engineering via Plasma Treatment in a MIS‐Type 2D Heterostructure

A synergetic enhancement of localized surface plasmon resonance and photo-induced effect for graphene/GaAs photodetector.

Electrically Tunable Photoresponse In A Graphene Heterostructure Photodetector

Photo-induced free radical modification of graphene.

Photoelectrochemical Response of Ag-graphene Heterostructures: Insight into the Localized Surface Plasmon Enhanced Photocurrent Generation Process.

Enhancement of Out-of-Plane Charge Transport in a Vertically Stacked Two-Dimensional Heterostructure Using Point Defects

Anomalous Photoresponse in the Deep-Ultraviolet Due to Resonant Excitonic Effects in Oxygen Plasma Treated Few-Layer Graphene

The role of contacts in graphene transistors: A scanning photocurrent study

First-principles Analysis of Photo-current in Graphene PN Junctions

Enhancement of Photocurrent in Suspended Monolayer Graphene

Plasmon-Enhanced Photothermoelectric Conversion in Chemical Vapor Deposited Graphene P-N Junctions

The Photoelectric Response of the Graphene/gesi QDs Hybrid Structure

Visible and infrared photocurrent enhancement in a graphene-silicon Schottky photodetector through surface-states and electric field engineering

Photocurrent Enhancement of Graphene Photodetectors by Photon Tunneling of Light into Surface Plasmons

Photoresponsivity of an All-Semimetal Heterostructure Based on Graphene and WTe 2

Defect-Engineered Heat Transport in Graphene: A Route to High Efficient Thermal Rectification

Gate-modulated photoresponse in graphene field-effect transistors

Enhanced Photodetection in Graphene-Integrated Photonic Crystal Cavity

Enhanced thermionic-dominated photoresponse in graphene Schottky junctions