Abstract: Photodetectors with high responsivity, broadband response to mid-infrared range are in a great demand in optical detection area. Topological charge-density-wave (CDW) semimetal materials with high carrier mobility and near zero bandgap provide an emerging route to meet the demand. Here we firstly investigated the photo/magnetic field reshaped CDW melting phenomenon of quasi one dimensional (1D) topological CDW semimetal (TaSe4)2I. Two orders of magnitude of hysteretic resistance variation is achieved due to CDW melting, which can be manipulated by electric, magnetic field or photoexcitation. In situ polarized Raman scattering spectroscopy reveals the concurrent occurrence of both electronic and structural phase transition. Surprisingly, the phase transition could be driven by applying a minimum voltage interval of 10 {\mu}V or a magnetic field interval of 83 Oe at a moderate temperature 120 K. The sharpness of the transition is manifested by single point current jumping (SPCJ). Photodetectors based on this transition has much superior performance than that of quasi two dimensional (2D) TaS2 reported in literature, which is also elaborated by our density functional theory (DFT) calculation. Photoresponsivity at 120 K from visible (405 A/W @ 532 nm) to mid-infrared (31.67 A/W @ 4.73 um) and detectivity (7.2E9 Jones @ 532 nm, 5.6E8 Jones @ 4.73 um) are both one order of magnitude higher than that of TaS2 while the photoresponsivity and detectivity also outperforms commercialized HgCdTe material. Our work not only reveals the important role of dimensionality in CDW phase transition, but also paves a new way for implementing ultrasensitive, broadband photodetector as well as transconductance transistor, memory devices by exploiting quasi-1D topological CDW materials

Photoresponsivity of an All-Semimetal Heterostructure Based on Graphene and WTe 2

Highly responsive and broadband photodetectors based on WS2–graphene van der Waals epitaxial heterostructures

Electrically Tunable Photoresponse In A Graphene Heterostructure Photodetector

Tunable Photoresponse in 2D WTe<sub>2</sub>/MoS<sub>2</sub> Van der Waals Heterojunctions

Highly Sensitive and Broadband Photodetectors Based on WSe2/MoS2 Heterostructures with Van Der Waals Contact Electrodes

High Performance Van Der Waals Graphene–WS2–Si Heterostructure Photodetector

High Responsivity Photodetectors Based on Graphene/wse2 Heterostructure by Photogating Effect

Ultrasensitive resistance switching and giant photoresponsivity from visible to mid-infrared of quasi one-dimensional Weyl semimetal (TaSe4)2I

Fast Fabrication of WS<sub>2</sub>/Bi<sub>2</sub>Se<sub>3</sub> Heterostructures for High-Performance Photodetection

Gate-Tunable Rectification Inversion and Photovoltaic Detection in Graphene/Wse2 Heterostructures

Nonlinear Photoresponse of Type-Ii Weyl Semimetals

Anisotropic Broadband Photoresponse of Layered Type‐II Weyl Semimetal MoTe2

High Performance Graphene/semiconductor Van Der Waals Heterostructure Optoelectronic Devices

Tunable Photoresponse with Small Drain Voltage in Few-Layer Graphene–wse2 Heterostructures

Diverse modes regulated photoresponse and high-resolution imaging based on van der Waals semimetal PtTe2/semiconductor MoTe2 junctions

Realizing Enhanced Photoresponse for Self-Powered Broadband Photodetector with Asymmetric Contacts Based MoTe2/WSe2 Van Der Waals Heterostructure

Highly efficient tunable photodetector with a bipolar response in van der Waals heterojunctions

High-Response, Self-Driving Infrared Photodetection Based on WS2-Graphene Heterostructure and Metal-Oxide-Semiconductor Field Effect Transistor Structure

PtTe2 -Based Type-II Dirac Semimetal and Its Van Der Waals Heterostructure for Sensitive Room Temperature Terahertz Photodetection.

Graphene/Organic Semiconductor Heterojunction Phototransistors with Broadband and Bi-directional Photoresponse.

Enhanced Responsivity of a Graphene/si-Based Heterostructure Broadband Photodetector by Introducing a WS2 Interfacial Layer