Abstract:Abstract Low-dimensional semiconductor structurers formed on a substrate surface at pre-defined locations and with nano-precision placement is of vital interest. The potential of tailoring their electrical and optical properties will revolutionize the next generation of optoelectronic devices. Traditionally, highly aligned self-assembly of semiconductors relies on Stranski- Krastanov growth mode. In this work, we demonstrate a pathway towards ordered configuration of Ge islands on low lattice mismatch GaAs (110) substrate patterned using depth-controlled nanoindentation. Diamond probe tips with different geometries are used to nano-mechanically stamp the surface of GaAs (110). This creates nanoscale volumes of dislocation-mediated deformation which acts to bias nucleation. Results show that nanostamped GaAs exhibits selective-nucleation of Ge at the indent sites. Ge islands formed on a surface patterned using cube corner tip have height of ~10 nm and lateral size of ~225 nm. Larger islands are formed by using Vickers and Berkovich diamond tips (~400 nm). The strain state of the patterned structures is characterized by micro-Raman spectroscopy. A strain value up to 2% for all tip geometries has been obtained. Additionally, strong room temperature photoluminescence (PL) emission is observed around 1.9 μm (650 meV). The observed strain-induced enhancement in the light-emission efficiency is attributed to direct conduction to heavy-hole (cΓ-HH) and conduction to light-hole (cΓ-LH) transitions. The inherent simplicity of the proposed method offers an attractive technique to manufacture semiconductor quantum dot structures for future electronic and photonic applications.

Efficient nanopatterning of Ge surface induced by oblique argon cluster ion beam

Formation of irregular morphology on nanostructured surface by gas cluster ion beam

An intermediate morphology in the patterning of the crystalline Ge(001) surface induced by ion irradiation

Nanopore/pillar formation induced by ion irradiation with a controlled projected range via Au deposition on Ge

Mechanical Nano-Patterning: Toward Highly-Aligned Ge Self-Assembly on Low Lattice Mismatched GaAs Substrate

Surface Mass Transport and Island Nucleation During Growth of Ge on Laser Textured Si(001)

Dynamics of nanoscale triangular features on Ge surfaces

Measurement of Ehrlich-Schwoebel barrier contribution to the self-organized formation of ordered surface patterns on Ge(001)

Ordering of Ga Nanodroplets by Low-Energy Ion Sputtering

The effect of surface roughness on self-assembly tungsten nanoneedles induced by focused Ga + ion beam bombardment

Ge Nanoislands Grown by Radio Frequency Magnetron Sputtering: Comprehensive Investigation of Surface Morphology and Optical Properties

Ion-Beam-Directed Self-Ordering of Ga Nanodroplets on GaAs Surfaces

Nanopatterning of Si(110) Surface by Ion Sputtering: an Experimental and Simulation Study

Atomic Layer-By-Layer Oxidation Of Ge (100) And (111) Surfaces By Plasma Post Oxidation Of Al2o3/Ge Structures

Borate nonlinear optical single crystal surface finishing by argon cluster ion sputtering

Pattern transition from nanohoneycomb to nanograss on germanium by gallium ion bombardment

Ion sputtering nanostructuring crystalline MgF2 surface and its energy-dependent surface roughness

Classification of Ge hut clusters in the arrays formed by molecular beam epitaxy at low temperatures on the Si(001) surface

Development of procedures for obtaining clean, low-defect-density Ge(100) surfaces

Hydro-dynamics of surface patterning by ion beam irradiation: an interface phenomenon

Efficient photon capture on germanium surfaces using industrially feasible nanostructure formation