Abstract:We investigate the morphologies of the Ge(001) surface that are produced by bombardment with a normally incident, broad argon ion beam at sample temperatures above the recrystallization temperature. Two previously-observed kinds of topographies are seen, i.e., patterns consisting of upright and inverted rectangular pyramids, as well as patterns composed of shallow, isotropic basins. In addition, we observe the formation of an unexpected third type of pattern for intermediate values of the temperature, ion energy and ion flux. In this type of intermediate morphology, isolated peaks with rectangular cross sections stand above a landscape of shallow, rounded basins. We also extend past theoretical work to include a second order correction term that comes from the curvature dependence of the sputter yield. For a range of parameter values, the resulting continuum model of the surface dynamics produces patterns that are remarkably similar to the intermediate morphologies we observe in our experiments. The formation of the isolated peaks is the result of a term that is not ordinarily included in the equation of motion, a second order correction to the curvature dependence of the sputter yield.

What problem does this paper attempt to address?

The problem that this paper attempts to solve is the formation mechanism of the intermediate morphology generated by ion irradiation on the germanium (001) surface. Specifically, the researchers observed that under specific temperature, ion energy and ion flux conditions, in addition to the two previously known surface morphologies (i.e., the pattern composed of upright and inverted rectangular pyramids, and the pattern composed of shallow and isotropic basins), a new intermediate morphology will also be formed. This intermediate morphology is characterized by isolated peaks with rectangular cross - sections standing on a shallow and rounded basin landscape. The goal of the paper is to understand the conditions and mechanisms for the formation of this intermediate morphology and to verify this phenomenon through experiments and theoretical modeling. To achieve this goal, the researchers carried out the following work: 1. **Experimental part**: By changing the sample temperature, ion energy and ion flux, the germanium (001) surface was irradiated with an argon ion beam, and the changes in surface morphology were recorded using an atomic force microscope (AFM). 2. **Theoretical modeling**: The existing continuous surface dynamics model was extended by introducing a second - order correction term for the curvature - related sputtering yield to explain the formation of the intermediate morphology. This model can predict that within a certain parameter range, the surface will form a pattern similar to the intermediate morphology observed in the experiment. The research results show that the formation of this intermediate morphology is due to a term in the equation that is usually not considered - the second - order correction term of the curvature - dependent sputtering yield. This correction term will lead to the formation of isolated peaks under specific conditions, and the existence of these isolated peaks is one of the main features of the intermediate morphology. In addition, the Ehrlich - Schwoebel (ES) effect also plays an important role in preventing these isolated peaks from becoming true singularities. Through these studies, the paper not only reveals the physical mechanism of the formation of the intermediate morphology, but also provides a new perspective for understanding and controlling the nanostructures on the semiconductor surface under ion irradiation.

An intermediate morphology in the patterning of the crystalline Ge(001) surface induced by ion irradiation

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