Abstract:Ion implantation has been a key technology for the controlled surface modification of materials in microelectronics and generally, for tribology, biocompatibility, corrosion resistance and many more. To form shallow junctions in Ge is a challenging task. In this work the formation and accumulation of shallow damage profiles was studied by in-situ spectroscopic ellipsometry (SE) for the accurate tracking and evaluation of void and damage fractions in crystalline Ge during implantation of 200-keV Sb ions with a total fluence up to 1E16 cm-2 and an ion flux of 2.1E12 cm-2 s-1. The consecutive stages of damage accumulation were identified using optical multi-layer models with quantitative parameters of the thickness of modified layers as well as the volume fractions of amorphized material and voids. The effective size of damaged zones formed from ion tracks initiated by individual bombarding ions can be estimated by numerical simulation compared with the dynamics of damage profiles measured by ion beam analysis and ellipsometry. According to our observations, the formation of initial partial disorder was followed by complete amorphization and void formation occurring at the fluence of about 1E15 cm-2, leading to a high volume fraction of voids and a modified layer thickness of approx. 200 nm by the end of the irradiation process. This agrees with the results of numerical simulations and complementary scanning electron microscopy (SEM) measurements. In addition, we found a quasi-periodic time dependent behavior of amorphization and void formation represented by alternating accelerations and decelerations of different reorganization processes, respectively.

Surface defects created by low energy (20 < E < 240 eV) ion bombardment of Ge(001)

Surface defects created by 20keV Xe ion irradiation of Ge(111)

Surface damage produced by 20 keV Ga bombardment of Ge(001)

Surface Morphology Of Ge(111) During Etching By Kev Ions

Formation And Annihilation Of Nanocavities During Kev Ion Irradiation Of Ge

Ge(011)-C(8x10) Surface Structure And Hydrogen Desorption Pathways: A Temperature-Programmed Desorption And Scanning Tunneling Microscopy Study

Development of procedures for obtaining clean, low-defect-density Ge(100) surfaces

Surface Mass Transport and Island Nucleation During Growth of Ge on Laser Textured Si(001)

Measurement of Ehrlich-Schwoebel barrier contribution to the self-organized formation of ordered surface patterns on Ge(001)

Surface Morphology During Multilayer Epitaxial Growth of Ge(001).

Coarsening and Slope Selection During Crystal Growth and Etching of Ge(001)

The structure, energy, and electronic states of vacancies in Ge nanocrystals

Disorder and cavity evolution in single-crystalline Ge during implantation of Sb ions monitored in-situ by spectroscopic ellipsometry

Surface Roughness and Pattern Formation During Homoepitaxial Growth of Ge(001) at Low Temperatures

In-Situ Control of Defect Dynamics By Ellipsometry During Ion Implantation – Evolution of Disorder and Cavity Structure in Single-Crystalline Ge During Implantation of Sb Ions

Electron Irradiation Induced Defects In Germanium-Doped Czochralski Silicon Substrates And Diodes

Relaxation Of Nanometer-Scale Surface Morphology

An intermediate morphology in the patterning of the crystalline Ge(001) surface induced by ion irradiation

Effects of High-Flux Low-Energy Ion Bombardment on the Low-Temperature Growth Morphology of Tin(001) Epitaxial Layers

Continuum Model of Surface Roughening and Epitaxial Breakdown During Low-Temperature Ge(001) Molecular Beam Epitaxy