Abstract:Porous materials are essential for a wide range of applications in energy storage, catalysis, and environmental solutions. Material fabrication methods which can tailor the porous structures in a deterministic manner are highly valuable for the development of the field. In this paper, we use ion irradiation to synthesize a large-scale germanium (Ge)-based porous structure. We furthermore demonstrate the structure to consist of pores interconnected by ultra-small channels that effectively allow transport of gaseous molecules throughout the whole network. Aside qualitative assessment of the evolution of the structure, the combination of transmission electron microscopy, microbeam Rutherford backscattering spectrometry and a Ge-on-Si sample design enables the quantification of properties such as mass density and sputtering yields during the evolution of porosity. We find progression of pore formation from the surface with a constant rate with increasing dose at otherwise constant density of the porous phase. Proximity to the substrate terminates pore formation well before reaching the interface with higher doses, eventually inducing a depth-independent densification of the porous structure. Experimental evidence challenges vacancy clustering as a commonly referred-to mechanism for pore-formation. Instead, relaxation in structurally weakened, i.e. near-surface volumes of the material by micro-explosions can conclusively explain all observations. The porous germanium synthesized in our approach is considered more resilient at high temperature and strong pH conditions than polymeric and hybrid materials, indicating great potential for applications in such environments.

Nanopore/pillar formation induced by ion irradiation with a controlled projected range via Au deposition on Ge

Studies on Surface Damage Induced by Ion Bombardment

Enabling tailored nanoporous germanium by quantifying the evolution of structural properties during self-irradiation

Efficient nanopatterning of Ge surface induced by oblique argon cluster ion beam

Ge-Dot/Si Multilayered Structures Through Ni-Induced Lateral Crystallization

Swelling or Erosion on the Surface of Patterned Gan Damaged by Heavy Ion Implantation

Ordered Au Nanocrystals on a Substrate Formed by Light-Induced Rapid Annealing.

Fabrication of InP nano pillars by ECR Ar ion irradiation

Nanopatterning of metal-coated silicon surfaces via ion beam irradiation: Real time x-ray studies reveal the effect of silicide bonding

In situ heavy ion irradiation studies of nanopore shrinkage and enhanced radiation tolerance of nanoporous Au

Patterned growth of self-assembled silicon nanostructures by ion implantation and electron beam annealing

An intermediate morphology in the patterning of the crystalline Ge(001) surface induced by ion irradiation

Formation of irregular morphology on nanostructured surface by gas cluster ion beam

Template-assisted growth of Ga-based nanoparticle clusters on Si: effect of post-annealing process on the Ga ion beam exposed 2D arrays fabricated by focused ion beam nanolithography

The Radiation Effect of Ion Species on the Microstructure of Nanoporous Gold

Nanoscale Modification of Optical Properties in Ge-Doped Sio2 Glass by Electron-Beam Irradiation

Controllable Shrinking and Shaping of Silicon Nitride Nanopores under Electron Irradiation

Ge Nanoislands Grown by Radio Frequency Magnetron Sputtering: Comprehensive Investigation of Surface Morphology and Optical Properties

Large area buried nanopatterning by broad ion implantation without any mask or direct writing

Percolation Network of PdGe Phase Formed on Ge Surface by High-Current Pd-ion Implantation

Damage Evolution in Gan under Mev Heavy Ion Implantation