Controllable Shrinking and Shaping of Silicon Nitride Nanopores under Electron Irradiation

W. M. Zhang,Y. G. Wang,J. Li,J. M. Xue,H. Ji,Q. Ouyang,J. Xu,Y. Zhang
DOI: https://doi.org/10.1063/1.2723680
IF: 4
2007-01-01
Applied Physics Letters
Abstract:Modification of silicon nitride nanopores under electron beam (e-beam) irradiation was investigated using a scanning electron microscope (SEM). Under e-beam irradiation, all pores with diameters ranging from 40to200nm undergo shrinkage, and the shrinkage rate increases with the rate of energy deposition. By using the selected-area scanning tool in the SEM, the silicon nitride nanopores can be selectively reshaped based on localized e-beam irradiation, with a characteristic dimension smaller than 10nm. A selected-area shaping technique was proposed to controllably shrink and shape the nanopores to a special structure.
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