Abstract:The complexity of charge trapping in semiconductor devices, such as high-kappa MOSFETs, is increasing as the devices themselves become more complicated. To facilitate research into such charge-trapping issues, here we propose an optimized simulation framework that is composed of density-functional theory (DFT) for electronic structure calculation and Marcus theory for the calculation of charge-trapping rates. The DFT simulations are either carried out or corrected by using the Heyd-Scuseria-Ernzerhof hybrid functional. Using this framework, the hole-trapping characteristics along multiple paths in Si/SiO2/HfO2 stacks are investigated, and the relative importance of each path is revealed by calculating its exact hole-trapping rate. Besides the study on crystalline stacks, we also create an amorphous stack, which is more realistic compared with experiments and real devices, to reveal more active trapping centers and to study the statistical feature of charge trapping induced by structural disorder. In addition, to seek effective measures for relieving these charge-trapping problems, the effects of hydrogen and fluorine passivations are discussed, and physical insights for improving the performance of high-kappa MOSFETs are provided.

Direct tunneling through high-$κ$ amorphous HfO$_2$: effects of chemical modification

Modulation of Interfacial and Electrical Properties of ALD-derived HfAlO/Al2O3/Si Gate Stack by Annealing Temperature

Modeling of direct tunneling current through interfacial oxide and high-K gate stacks

Modeling of Tunneling Current Through Hf-based Dielectric Films for Nanoscale MOSFET

Direct Tunneling Current Model for MOS Devices with Ultra-Thin Gate Oxide Including Quantization Effect and Polysilicon Depletion Effect

Direct tunneling hole currents through ultrathin gate oxides in metal-oxide-semiconductor devices

The interfaces of lanthanum oxide-based subnanometer EOT gate dielectrics.

Computation of Direct Tunneling gate leakage currents in nano-MOSFETs using ensemble Full Band Monte Carlo with quantum correction

Gate tunneling currents in ultrathin oxide metal–oxide–silicon transistors

Total Ionizing Dose Effects and Proton-Induced Displacement Damage on MoS 2 -Interlayer-mos 2 Tunneling Junctions

A Study of Metal Gates on HfO2 Using Si Nanowire Field Effect Transistors As Platform

Quantum-mechanical modeling of electron tunneling current from the inversion layer of ultra-thin-oxide nMOSFET's

Tunneling FETs on SOI: Suppression of Ambipolar Leakage, Low-Frequency Noise Behavior, and Modeling

Interface and Electrical Properties of Buried InGaAs Channel MOSFET with an InP Barrier Layer and Al2O3/HfO2/Al2O3 Gate Dielectrics

Gate tunneling in nanowire MOSFETs

Interface Engineering Through Atomic Dopants in Hfo2-Based Gate Stacks

Characterizing the Charge Trapping Across Crystalline and Amorphous Si/SiO 2 /hfo 2 Stacks from First-Principle Calculations

Interface Studies Of Gaas Metal-Oxide-Semiconductor Structures Using Atomic-Layer-Deposited Hfo2/Al2o3 Nanolaminate Gate Dielectric

Modeling of Gate Tunneling Current for Nanoscale MOSFETs with High-k Gate Stacks

Modeling On Direct Tunneling Current In Ultra-Thin Oxide Nmosfet Considering Quantum Mechanics

Atomic Layer Deposition of HfO2 Gate Dielectric with Surface Treatments and Post-metallization Annealing for Germanium MOSFETs