Abstract:Although various van der Waals stacking systems for preparing multifunctional devices are reported, their complexity in fabrication and/or inflexibility in reversible operation limit the possibility of multifunctional integrations and the requirement of the fast‐growing internet of things paradigm. Here, a simple and effective rapid temperature annealing strategy for reversibly controlling and optimizing the electronic properties of MoTe2‐based heterostructure electronics is proposed/realized. Van der Waals (vdW) heterostructures—in which layered materials are purposely selected to assemble with each other—allow unusual properties and different phenomena to be combined and multifunctional electronics to be created, opening a new chapter for the spread of internet‐of‐things applications. Here, an O2‐ultrasensitive MoTe2 material and an O2‐insensitive SnS2 material are integrated to form a vdW heterostructure, allowing the realization of charge‐polarity control for multioperation‐mode transistors through a simple and effective rapid thermal annealing strategy under dry‐air and vacuum conditions. The charge‐polarity control (i.e., doping and de‐doping processes), which arises owing to the interaction between O2 adsorption/desorption and tellurium defects at the MoTe2 surface, means that the MoTe2/SnS2 heterostructure transistors can reversibly change between unipolar, ambipolar, and anti‐ambipolar transfer characteristics. Based on the dynamic control of the charge‐polarity properties, an inverter, output polarity controllable amplifier, p‐n diode, and ternary‐state logics (NMIN and NMAX gates) are demonstrated, which inspire the development of reversibly multifunctional devices and indicates the potential of 2D materials.

Reversible Switching of Charge Injection Barriers at Metal/Organic-Semiconductor Contacts Modified with Structurally Disordered Molecular Monolayers

Substituent-Controlled Reversible Switching of Charge Injection Barrier Heights at Metal/Organic Semiconductor Contacts Modified with Disordered Molecular Monolayers

Switching Electron Current In A Semiconductor Nanowire Via Controlling The Carrier Injection From The Electrode

On Practical Charge Injection at the Metal/Organic Semiconductor Interface

Dipolar Switching of Charge-Injection Barriers at Electrode/Semiconductor Interfaces as a Mechanism for Water-Induced Instabilities of Organic Devices

Controllable Resistive Switching in Au/Nb:Srtio3 Microscopic Schottky Junctions

Temperature-dependent Transition from Injection-Limited to Space-Charge-limited Current in Metal-Organic Diodes

Nanostructure engineering in organic semiconductor devices toward interface matching

Bistable Interface: Reversible Switching of Rectifying to Nonrectifying Current Across Heterostructured Thin Films of MOFs

Local cation-tuned reversible single-molecule switch in electric double layer

Interface Engineering of Semiconductor/Dielectric Heterojunctions Toward Functional Organic Thin-Film Transistors

Polarity control of carrier injection at ferroelectric/metal interfaces for electrically switchable diode and photovoltaic effects

Reconfigurable van der Waals Heterostructured Devices with Metal–Insulator Transition

Asymmetric Chemical Functionalization of Top‐Contact Electrodes: Tuning the Charge Injection for High‐Performance MoS 2 Field‐Effect Transistors and Schottky Diodes

Field-induced Conductance Switching by Charge-state Alternation in Organometallic Single-Molecule Junctions

Gate-controlled Reversible Rectifying Behaviour in Tunnel Contacted Atomically-Thin MoS2 Transistor

Tuning the Schottky Barrier Height at the Interfaces of Metals and Mixed Conductors

Reversible Charge‐Polarity Control for Multioperation‐Mode Transistors Based on van der Waals Heterostructures

Reversible Photomodulation of Organic Transistor Performance by Conformation-Induced Capacitive Coupling

An organic–metal–inorganic three-component nanojunction array: design, construction and its reversible diode-like resistive electrical switching behavior

Dynamical Study On Charge Injection And Transport In A Metal/Polythiophene/Metal Structure