Abstract:Electronic devices based on organic semiconductors offer an attractive alternative to conventional inorganic devices due to potentially lower costs, simpler packaging and compatibility with flexible substrates1,2. As is the case for silicon-based microelectronics, the use of complementary logic elements—requiring n- and p-type semiconductors whose majority charge carriers are electrons and holes, respectively—is expected to be crucial to achieving low-power, high-speed performance. Similarly, the electron-segregating domains of photovoltaic assemblies require both n- and p-type semiconductors3,4,5. Stable organic p-type semiconductors are known6, but practically useful n-type semiconductor materials have proved difficult to develop, reflecting the unfavourable electrochemical properties of known, electron-demanding polymers7. Although high electron mobilities have been obtained for organic materials, these values are usually obtained for single crystals at low temperatures, whereas practically useful field-effect transistors (FETs) will have to be made of polycrystalline films that remain functional at room temperature. A few organic n-type semiconductors that can be used in FETs are known, but these suffer from low electron mobility, poor stability in air and/or demanding processing conditions8,9,10. Here we report a crystallographically engineered naphthalenetetracarboxylic diimide derivative that allows us to fabricate solution-cast n-channel FETs with promising performance at ambient conditions. By integrating our n-channel FETs with solution-deposited p-channel FETs, we are able to produce a complementary inverter circuit whose active layers are deposited entirely from the liquid phase. We expect that other complementary circuit designs11 can be realized by this approach as well.

Dipolar Switching of Charge-Injection Barriers at Electrode/Semiconductor Interfaces as a Mechanism for Water-Induced Instabilities of Organic Devices

Gate Alignment of Liquid Water Molecules in Electric Double Layer

Substituent-Controlled Reversible Switching of Charge Injection Barrier Heights at Metal/Organic Semiconductor Contacts Modified with Disordered Molecular Monolayers

Reversible Switching of Charge Injection Barriers at Metal/Organic-Semiconductor Contacts Modified with Structurally Disordered Molecular Monolayers

Air- and Active Hydrogen-Induced Electron Trapping and Operational Instability in n-Type Polymer Field-Effect Transistors

Water permeation pathways in laminated organic single-crystal devices

Switching of Electron and Ion Conductions by Reversible H2O Sorption in n-Type Organic Semiconductors

Electrical Switching Behavior from Ultrathin Potential Barrier of Self-Assembly Molecules Tuned by Interfacial Charge Trapping

TOP-electrode-eliminated organic bi-stable devices and their two switching modes in different atmospheres

Electron-Ion Coupling Breaks Energy Symmetry in Organic Electrochemical Transistors

Bias-dependent Interface Roughening and Its Effect on Electric Bistability of Organic Devices

Oxygen Switchable Photo-Hydrovoltaic Effect along the Silicon-Water Interface

Contact-free probing of interfacial charging and Debye-like charge screening in SiO$_2$/PDI8-CN$_2$ systems by optical second harmonic generation

On the Working Mechanisms of Solid‐State Double‐Layer‐Dielectric‐Based Organic Field‐Effect Transistors and Their Implication for Sensors

Doping-Induced Dielectric Catastrophe Prompts Free-Carrier Release in Organic Semiconductors

Charge carrier inversion in a doped thin film organic semiconductor island

Field-induced water electrolysis switches an oxide semiconductor from an insulator to a metal

Bipolar charge transfer induced by water: experimental and first-principles studies.

Charge injection promoted electrohydrodynamic instabilities in poly(3-hexylthiophene) thin films

A soluble and air-stable organic semiconductor with high electron mobility

Temperature-dependent Transition from Injection-Limited to Space-Charge-limited Current in Metal-Organic Diodes