Abstract:With the growing awareness of energy savings and consumption for a sustainable ecosystem, the concept of iontronics, that is, controlling electronic devices with ions, has become critically important. Composite devices made of ions and solid materials have been investigated for diverse applications, ranging from energy storage to power generation, memory, biomimetics, and neuromorphic devices. In these studies, three terminal transistor configurations with liquid electrolytes have often been utilized because of their simple device structures and relatively easy fabrication processes. To date, oxide semiconductors and layered materials have mainly been used as active materials. However, inorganic compound semiconductors, which have a long history of basic and applied research, hardly function as channel materials in ion-gated transistors, partly because of the Schottky barrier at the electrode interface. Herein, we show that a typical group III–V compound semiconductor, InP, is available as a high-performance channel for ion-gated transistors with an on/off current ratio of ≈ 10 5 and a subthreshold swing as small as 93 mV/dec at room temperature. We fabricated AuGe/Ni contact electrodes via annealing to obtain the Ohmic contacts over a wide temperature range. The electrical resistance of InP was drastically decreased by the ionic liquid gating, which led to an electrically induced insulator-to-metal transition. Bulk compound semiconductors are well characterized and have relatively high carrier mobilities; thus, devices combined with electrolytes should prompt the development of iontronics research for novel device functionalities.

Field-induced water electrolysis switches an oxide semiconductor from an insulator to a metal

Eco-Friendly, Water-Induced In2O3 Thin Films for High-Performance Thin-Film Transistors and Inverters

Field-induced resistive switching in metal-oxide interfaces

Tuning the Electron Gas at an Oxide Heterointerface Via Free Surface Charges

Insulator to Metal Transition in WO$_3$ Induced by Electrolyte Gating

Evolution of Insulator-Metal Phase Transitions in Epitaxial Tungsten Oxide Films during Electrolyte-Gating

Oxygen Switchable Photo-Hydrovoltaic Effect along the Silicon-Water Interface

Layered semiconductor devices with water top-gates: High on-off ratio field-effect transistors and aqueous sensors

Atomic-Scale Metal-Insulator Transition in SrRuO3 Ultrathin Films Triggered by Surface Termination Conversion

Electrically Induced, Non-Volatile, Metal Insulator Transition in a Ferroelectric Gated MoS$_2$ Transistor

Emergent electric field control of phase transformation in oxide superlattices

Electrically induced insulator-to-metal transition in InP-based ion-gated transistor

Electrolyte Gate Controlled Metal-Insulator Transitions of the CaZrO3/SrTiO3 Heterointerface

Gate Induced Metal-Insulator Transition in MoS2 by Solid Superionic Conductor LaF3.

Sign-changing non-monotonic voltage gain of HfO2/Parylene-C/SrTiO3 field-effect transistor due to percolative insulator to two-dimensional metal transition

All-Water-Driven High-k HfO2 Gate Dielectrics and Applications in Thin Film Transistors

Subsurface Engineering Induced Fermi Level De-pinning in Metal Oxide Semiconductors for Photoelectrochemical Water Splitting

Tunable 2D Electron- and 2D Hole States Observed at Fe/SrTiO$_3$ Interfaces

Fabrication of hybrid self-assembled monolayer/hafnium oxide gate dielectric by radical oxidation for molybdenum disulfide field-effect transistors

Mechanistic Insights on Permeation of Water over Iron Cations in Nanoporous Silicon Oxide Films for Selective H2 and O2 Evolution

Manipulating the insulator-metal transition through tip-induced hydrogenation