Abstract:The fabrication of high-performance (opto-)electronic devices based on 2D channel materials requires the optimization of the charge injection at electrode-semiconductor interfaces. While chemical functionalization with chemisorbed self-assembled monolayers has been extensively exploited to adjust the work function of metallic electrodes in bottom-contact devices, such a strategy has not been demonstrated for the top-contact configuration, despite the latter being known to offer enhanced charge-injection characteristics. Here, a novel contact engineering method is developed to functionalize gold electrodes in top-contact field-effect transistors (FETs) via the transfer of chemically pre-modified electrodes. The source and drain Au electrodes of the molybdenum disulfide (MoS2 ) FETs are functionalized with thiolated molecules possessing different dipole moments. While the modification of the electrodes with electron-donating molecules yields a marked improvement of device performance, the asymmetric functionalization of the source and drain electrodes with different molecules with opposed dipole moment enables the fabrication of a high-performance Schottky diode with a rectification ratio of ≈103 . This unprecedented strategy to tune the charge injection in top-contact MoS2 FETs is of general applicability for the fabrication of high-performance (opto-)electronic devices, in which asymmetric charge injection is required, enabling tailoring of the device characteristics on demand.

Substituent-Controlled Reversible Switching of Charge Injection Barrier Heights at Metal/Organic Semiconductor Contacts Modified with Disordered Molecular Monolayers

Reversible Switching of Charge Injection Barriers at Metal/Organic-Semiconductor Contacts Modified with Structurally Disordered Molecular Monolayers

Dipolar Switching of Charge-Injection Barriers at Electrode/Semiconductor Interfaces as a Mechanism for Water-Induced Instabilities of Organic Devices

Temperature-dependent Transition from Injection-Limited to Space-Charge-limited Current in Metal-Organic Diodes

Reversible switching of a single-dipole molecule imbedded in two-dimensional hydrogen-bonded binary molecular networks

Regulating a benzodifuran single molecule redox switch via electrochemical gating and optimization of molecule/electrode coupling.

Molecular Approach to Electrochemically Switchable Monolayer MoS2 Transistors

Dynamically switching the surface electronic and electrostatic properties of indium tin oxide electrodes with photochromic monolayers

Controlling the Direction of Rectification in a Molecular Diode

High performance mechano-optoelectronic molecular switch

Restricting Conformational Space: A New Blueprint for Electrically Switchable Self-Assembled Monolayers

High Conductance Ratio in Molecular Optical Switching of Functionalized Nanoparticle Self-Assembled Nanodevices

Electrical Switching Behavior from Ultrathin Potential Barrier of Self-Assembly Molecules Tuned by Interfacial Charge Trapping

First principles study of electron transport through diarythylene transition metal dichalcogenide molecular switch

Photocontrol of charge injection/extraction at electrode/semiconductor interfaces for high-photoresponsivity organic transistors

Operating a Multi-Level Molecular Dimer Switch through Precise Tip-Molecule Control

Asymmetric Chemical Functionalization of Top‐Contact Electrodes: Tuning the Charge Injection for High‐Performance MoS 2 Field‐Effect Transistors and Schottky Diodes

Effective Descriptor for Screening Single-Molecule Conductance Switches

Reversible Photomodulation of Organic Transistor Performance by Conformation-Induced Capacitive Coupling

Benzothiadiazole versus Thiazolobenzotriazole: A Structural Study of Electron Acceptors in Solution-Processable Organic Semiconductors

Molecular Diodes Induced by a Schottky Barrier with a Gold-Silicon Doped Electrode