Abstract:The rectification characteristics can be tuned by the molecular length of oligophenylene thiols self‐assembled monolayers (OPT SAMs) and the coordinated metal atom in porphyrinic 2D metal–organic frameworks (MOFs) in demolecular heterojunctions. Combining Kelvin probe force microscopy measurements and first‐principles calculations, it elucidates that the rectification variations come from the adjustment of energy level alignment at OPT SAMs//2D MOF interface. As functional electrical devices advance, new strategies for regulating electrical properties are essential for achieving diverse electrical performance. In this study, molecular heterojunction rectifiers are constructed by connecting porphyrinic 2D metal–organic framework (2D MOF) nanosheets and oligophenylene thiols self‐assembled monolayers (OPT SAMs) within metal electrodes. The rectification characteristics can be tuned by the molecular length of OPT and the coordinated metal atom in the center of 2D MOFs. Specifically, a rectification ratio of more than 1.67 orders of magnitude is achieved in the heterojunction composed of 2D Zn‐TCPP MOF nanosheet (TCCP, tetrakis(4‐carboxyphenyl) porphyrin) and OPT3 SAM. Combining Kelvin probe force microscopy measurements and first‐principles calculations of the 2D MOF nanosheets, it elucidates that the rectification variations come from the adjustment of energy level alignment at OPT SAMs//2D MOF interface, leading to asymmetric charge transport with the voltage polarities. This strategy can be further extended to Cu‐MOF nanosheets, which also exhibit rectification behaviors when placed on OPT2 SAMs. This work provides a universal and flexible strategy for regulating the electrical behaviors of MOFs without the need for specific design and synthesis, paving the way for the development of MOF‐based functional electronic devices.

Bistable Interface: Reversible Switching of Rectifying to Nonrectifying Current Across Heterostructured Thin Films of MOFs

Heterointerface Engineered Electronic and Magnetic Phases of NdNiO 3 Thin Films

Nonvolatile Electrical Control Of 2d Cr2ge2te6 And Intrinsic Half Metallicity In Multiferroic Hetero-Structures

Programmable transition metal dichalcogenide homojunctions controlled by nonvolatile ferroelectric domains

Tunable Rectification in 2D Porphyrinic Metal–Organic Framework Nanosheets Molecular Heterojunctions

Electrical bistability based on metal-organic frameworks

Direct Observation of Weakened Interface Clamping Effect Enabled Ferroelastic Domain Switching

Voltage Control of Metal-Insulator Transition and Non-Volatile Ferroelastic Switching of Resistance in VOx/PMN-PT Heterostructures.

Anisotropic conductance at improper ferroelectric domain walls

2D CrMoC2S6/Sc2CO2 multiferroic heterostructure with robust antiferromagnetic ordering, switchable electronic properties and magnetic anisotropy

Electrically Controlled Non-Volatile Switching of Magnetism in Multiferroic Heterostructures Via Engineered Ferroelastic Domain States

Bifunctional NbS2-Based Asymmetric Heterostructure for Lateral and Vertical Electronic Devices.

Reversible Charge‐Polarity Control for Multioperation‐Mode Transistors Based on van der Waals Heterostructures

Heterointerface effects on lithium-induced phase transitions in intercalated MoS2

Interfacial Charge-Mediated Non-Volatile Magnetoelectric Coupling in Co0.3Fe0.7/Ba0.6Sr0.4TiO3/Nb:SrTiO3 Multiferroic Heterostructures

Heterointerface engineering of layered double hydroxide/MAPbBr 3 heterostructures enabling tunable synapse behaviors in a two-terminal optoelectronic device

Highly Tunable Magnetic and Magnetotransport Properties of Exchange Coupled Ferromagnet/Antiferromagnet-based Heterostructures

Gate-controlled Reversible Rectifying Behaviour in Tunnel Contacted Atomically-Thin MoS2 Transistor

A high-mobility electron gas at the LaAlO3/SrTiO3 heterointerface

Enhanced Conductivity Along Lateral Homojunction Interfaces of Atomically Thin Semiconductors

Tailoring Magnetoelectric Coupling in BiFeO3/La0.7Sr0.3MnO3 Heterostructure Through the Interface Engineering