L. V. Lutsev,V. V. Pavlov,P. A. Usachev,A. A. Astretsov,A. I. Stognij,N. N. Novitskii
Abstract:In the avalanche regime we observed the negative photoconductance of heterostructures of silicon dioxide films containing cobalt nanoparticles grown on gallium arsenide, SiO2(Co)/GaAs. Light irradiation with the photon energy less than the bandgap energy of the GaAs creates holes trapped on defects within the GaAs bandgap, suppresses the avalanche feedback and causes a reduction of the current flowing in the SiO2(Co)/GaAs.
What problem does this paper attempt to address?
The problem that this paper attempts to solve is the negative photoconductivity phenomenon observed in the SiO₂(Co)/GaAs heterostructure. Specifically, the author studied the influence of light on current in the avalanche regime when the photon energy is less than the GaAs band - gap energy. Through this study, the author hopes to understand the mechanism of this negative photoconductivity and its potential applications.
### Main problems:
1. **Negative photoconductivity phenomenon**: Why does light cause the current to decrease rather than increase under certain conditions (such as when the photon energy is lower than the GaAs band - gap energy)?
2. **Regulation of the avalanche process**: How to explain the influence of light on the behavior of carriers in the avalanche process?
### Specific research content:
- **Experimental background**: The research is based on the behavior of devices with SiO₂(Co)/GaAs heterostructures in the avalanche regime.
- **Influence of photon energy**: When the photon energy is less than the GaAs band - gap energy, light will generate holes trapped by defects within the GaAs band - gap, suppressing the avalanche feedback, thus leading to a decrease in current.
- **Current change**: Through experimental measurement of current changes under different voltages and light intensities, the existence of the negative photoconductivity phenomenon was discovered.
### Theoretical explanation:
- **Four - level model**: Considering the oxygen ion energy levels within the GaAs band - gap, the change in dark conductivity at low temperatures was explained.
- **Feedback mechanism in the avalanche process**: Free electrons generated by light and holes trapped by defects affect the positive feedback in the avalanche process, leading to a decrease in current.
### Conclusion:
In the avalanche regime, when the photon energy is less than the GaAs band - gap energy, light will generate holes trapped by defects within the GaAs band - gap. These holes impede the movement of holes generated in the avalanche process and reduce the positive feedback, thus leading to the negative photoconductivity phenomenon. This finding not only reveals the unique properties of the SiO₂(Co)/GaAs heterostructure but also provides new ideas for the development of high - sensitivity infrared detectors.
### Formula summary:
- The change in current density is described by the following formula:
\[
j_t(P, \varepsilon) = [1 + \beta(P, \varepsilon)][j_0 + j_c(P, \varepsilon)]
\]
where \( j_0 \) is the current density without light, \( j_c(P, \varepsilon) \) is the electron current density in the conduction band caused by light, and \( \beta(P, \varepsilon) \) is the positive feedback coefficient.
- The amount of current change is given by the following formula:
\[
\Delta j(P, \varepsilon) = j_t(P, \varepsilon) - j_t(0, \varepsilon)
\]
- The condition for the occurrence of the negative photoconductivity phenomenon is:
\[
\frac{\partial \beta(P, \varepsilon)}{\partial P} < -\frac{1 + \beta(P, \varepsilon)}{j_0 + j_c(P, \varepsilon)} \cdot \frac{\partial j_c(P, \varepsilon)}{\partial P}
\]
Through these formulas and experimental results, the author successfully explained the negative photoconductivity phenomenon observed under specific conditions and provided a theoretical basis for further research and applications.