Abstract:Abstract The existence of Schottky barrier between the semiconductive graphene nanoribbon (GNR) and the metallic electrodes at its both ends causes a major hurdle in the development of GNR based devices. Here, a dumbbell-shape GNR structure was proposed to solve the problem. This structure consisted of a semiconductive GNR and wide metallic GNR at both ends. The ohmic contact between the wide metallic GNR and metallic electrode was easily achieved. Furthermore, an effective mechanism to enhance electronic band properties of the dumbbell-shape GNR structure by using asymmetric metallization technique is employed. To achieve this, two different metallic electrodes were introduced, Platinum (Pt) and Titanium (Ti), at each end of the GNR channel to break the symmetry in the Schottky barrier at both ends. The asymmetric difference in the Schottky barrier at the electrode/GNR interface at each ends allows for an efficient directional flow of electrons, effectively separating the photo-generated carriers. The individual contributions at each electrode/GNR interface were summed up resulting in a larger absolute photo-induced current. The electron transfer characteristics of the DS-GNR-FET was studied under an irradiation of a light source with a wavelength of 632.8-nm at room temperature. The developed 70-nm DSGNR-FET showed a significantly larger and enhanced photosensitivity of about 1.6 × 107 A/W.m2 as compared to the device fabricated with identical metallic electrodes as the source and drain electrodes.

Giant Photosensitivity Of A-C:Co/Gaas/Ag P-N-Metal Junctions

The contact and photoconductivity characteristics between Co doped amorphous carbon and GaAs: n-type low-resistivity and semi-insulated high-resistivity GaAs

Band gap narrowing and doping level of heavily doped Germanium nanocrystals deduced from photoconductivity studies

Abnormal Photoabsorption in High Resistance Gan Epilayer

Photoelectric effect accelerated electrochemical corrosion and nanoimprint processes on gallium arsenide wafers

Charge transfer mediated giant photo-amplification in air-stable $α$-CsPbI$_3$ nanocrystals decorated 2D-WS$_2$ photo-FET with asymmetric contacts

Negative photoconductance in SiO2(Co)/GaAs heterostructure in the avalanche regime

Enhanced lateral photovoltaic effect observed in the structure of Ag/MoS<sub>2</sub> quantum dots/n-type Silicon

Giant persistent photoconductivity in rough silicon nanomembranes.

Fabrication and photoconductivity of macroscopically long coaxial structured Ag/Ag2S nanowires with different core-to-shell thickness ratios.

Photoelectric e ﬀ ect accelerated electrochemical corrosion and nanoimprint processes on gallium arsenide wafers

Insights into performance enhancement mechanism of GaAs(100) photocathode by Cs/Li/O and Cs/Li/NF3 co-deposition

Ultralow-Noise Nano-Ag/Amorphous Ga 2 O 3 UV Photodetector Realized by Introducing Local Schottky Junctions

Photomechanical Effect Leading to Extraordinary Ductility in Covalent Semiconductors

Photosensitive Hole Transport In Schottky-Contacted Si Nanomembranes

Large Lateral Photoeffect Observed in Metal–semiconductor Junctions of CoxMnyO Films and Si

Enhanced Lateral Photovoltaic Effect Observed in the Structure of Ag/MoS2 Quantum Dots/n-Type Silicon

Improvement in Photosensitivity of Dumbbell-Shaped Graphene Nanoribbon Structures by Using Asymmetric Metallization Technique

High-work-function Transparent Electrode with an Enhanced Air-Stable Conductivity Based on AgNiCu Core-Shell Nanowires for Schottky Photodiode

Tailoring Semiconductor Lateral Multijunctions for Giant Photoconductivity Enhancement.

Highly-Effective Photocatalytic Properties and Interfacial Transfer Efficiencies of Charge Carriers for the Novel Ag2co3/Agx Heterojunctions Achieved by Surface Modification